[논문]Sub-millimeter size high mobility single crystal MoSe 2 monolayers synthesized by NaCl-assisted chemical vapor deposition

Li, Juncheng; Yan, Wenjie; Lv, Yanhui; Leng, Jian; Zhang, Duan; Ó; Coileá; in, Cormac; Cullen, Conor P.; Stimpel-Lindner, Tanja; Duesberg, Georg S.; Cho, Jiung; Choi, Miri; Chun, Byong Sun; Zhao, Yanfeng; Lv, Chengzhai; Arora, Sunil K.; Wu, Han-Chun

doi:10.1039/c9ra09103c

[해외논문] Sub-millimeter size high mobility single crystal MoSe 2 monolayers synthesized by NaCl-assisted chemical vapor deposition 원문보기

RSC advances, v.10 no.3, 2020년, pp.1580 - 1587

Li, Juncheng (School of Physics, Beijing Institute of Technology Beijing 100081 P. R. China wuhc@bit.edu.cn) , Yan, Wenjie (School of Physics, Beijing Institute of Technology Beijing 100081 P. R. China wuhc@bit.edu.cn) , Lv, Yanhui (School of Physics, Beijing Institute of Technology Beijing 100081 P. R. China wuhc@bit.edu.cn) , Leng, Jian (School of Physics, Beijing Institute of Technology Beijing 100081 P. R. China wuhc@bit.edu.cn) , Zhang, Duan (Elementary Educational College, Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Capital Normal University Beijing 100048 P. R. China) , Ó (Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Advanced Materials and Bioengineering Research (AMBER), School Chemistry, Trinity College Dublin Ireland) , Coileáin, Cormac (Centre for Research on Adaptive Nano) , Cullen, Conor P. , Stimpel-Lindner, Tanja , Duesberg, Georg S. , Cho, Jiung , Choi, Miri , Chun, Byong Sun , Zhao, Yanfeng , Lv, Chengzhai , Arora, Sunil K. , Wu, Han-Chun

Abstract ▼ AI-Helper

Monolayer MoSe2 is a transition metal dichalcogenide with a narrow bandgap, high optical absorbance and large spin-splitting energy, giving it great promise for applications in the field of optoelectronics. Producing monolayer MoSe2 films in a reliable and scalable manner is still a challenging task as conventional chemical vapor deposition (CVD) or exfoliation based techniques are limited due to the small domains/nanosheet sizes obtained. Here, based on NaCl assisted CVD, we demonstrate the simple and stable synthesis of sub-millimeter size single-crystal MoSe2 monolayers with mobilities ranging from 38 to 8 cm2 V−1 s−1. The average mobility is 12 cm2 V−1 s−1. We further determine that the optical responsivity of monolayer MoSe2 is 42 mA W−1, with an external quantum efficiency of 8.22%.Sub-millimeter single crystal MoSe2 monolayers with a mobility of 38 cm2 V−1 s−1 and responsivity of 42 mA W−1 were synthesized by NaCl-assisted chemical vapor deposition.

참고문헌 (51)

Kou L. Frauenheim T. Chen C. Nanoscale Multilayer Transition-Metal Dichalcogenide Heterostructures: Band Gap Modulation by Interfacial Strain and Spontaneous Polarization J. Phys. Chem. Lett. 2013 4 10 1730 1736 10.1021/jz400668d 10.1021/jz400668d 26282986

상세보기
Pumera M. Sofer Z. Ambrosi A. Layered transition metal dichalcogenides for electrochemical energy generation and storage J. Mater. Chem. A 2014 2 24 8981 8987 10.1039/C4TA00652F

상세보기
Bernardi M. Palummo M. Grossman J. C. Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials Nano Lett. 2013 13 8 3664 3670 10.1021/nl401544y 23750910

상세보기
Tongay S. Zhou J. Ataca C. Lo K. Matthews T. S. Li J. Grossman J. C. Wu J. Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe 2 versus MoS 2 Nano Lett. 2012 12 11 5576 5580 10.1021/nl302584w 23098085

상세보기
Zhang Y. Chang T. R. Zhou B. Cui Y. T. Yan H. Liu Z. Schmitt F. Lee J. Moore R. Chen Y. Lin H. Jeng H. T. Mo S. K. Hussain Z. Bansil A. Shen Z. X. Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe 2 Nat. Nanotechnol. 2014 9 2 111 115 10.1038/nnano.2013.277 24362235

상세보기
Mak K. F. Shan J. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides Nat. Photonics 2016 10 4 216 226 10.1038/nphoton.2015.282

상세보기
Kumar A. Ahluwalia P. K. Electronic structure of transition metal dichalcogenides monolayers 1H-MX 2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors Eur. Phys. J. B 2012 85 6 186 10.1140/epjb/e2012-30070-x

상세보기
Chang Y. H. Zhang W. Zhu Y. Han Y. Pu J. Chang J. K. Hsu W. T. Huang J. K. Hsu C. L. Chiu M. H. Takenobu T. Li H. Wu C. I. Chang W. H. Wee A. T. Li L. J. Monolayer MoSe 2 grown by chemical vapor deposition for fast photodetection ACS Nano 2014 8 8 8582 8590 10.1021/nn503287m 25094022

상세보기
Xu C. Peng S. Tan C. Ang H. Tan H. Zhang H. Yan Q. Ultrathin S-doped MoSe 2 nanosheets for efficient hydrogen evolution J. Mater. Chem. A 2014 2 16 5597 5601 10.1039/C4TA00458B

상세보기
Tsai C. Chan K. Abild-Pedersen F. Norskov J. K. Active edge sites in MoSe 2 and WSe 2 catalysts for the hydrogen evolution reaction: a density functional study Phys. Chem. Chem. Phys. 2014 16 26 13156 13164 10.1039/C4CP01237B 24866567

상세보기
Shi Y. Hua C. Li B. Fang X. Yao C. Zhang Y. Hu Y.-S. Wang Z. Chen L. Zhao D. Stucky G. D. Highly Ordered Mesoporous Crystalline MoSe 2 Material with Efficient Visible-Light-Driven Photocatalytic Activity and Enhanced Lithium Storage Performance Adv. Funct. Mater. 2013 23 14 1832 1838 10.1002/adfm.201202144

상세보기
Shin B. Zhu Y. Bojarczuk N. A. Chey S. J. Guha S. Control of an interfacial MoSe 2 layer in Cu 2 ZnSnSe 4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier Appl. Phys. Lett. 2012 101 5 053903 10.1063/1.4740276

상세보기
Gong Y. Lei S. Ye G. Li B. He Y. Keyshar K. Zhang X. Wang Q. Lou J. Liu Z. Vajtai R. Zhou W. Ajayan P. M. Two-Step Growth of Two-Dimensional WSe 2 /MoSe 2 Heterostructures Nano Lett. 2015 15 9 6135 6141 10.1021/acs.nanolett.5b02423 26237631

상세보기
Shaw J. C. Zhou H. Chen Y. Weiss N. O. Liu Y. Huang Y. Duan X. Chemical vapor deposition growth of monolayer MoSe 2 nanosheets Nano Res. 2014 7 4 511 517 10.1007/s12274-014-0417-z

상세보기
Larentis S. Fallahazad B. Tutuc E. Field-effect transistors and intrinsic mobility in ultra-thin MoSe 2 layers Appl. Phys. Lett. 2012 101 22 223104 10.1063/1.4768218

상세보기
Coleman J. N. Lotya M. O'Neill A. Bergin S. D. King P. J. Khan U. Young K. Gaucher A. De S. Smith R. J. Shvets I. V. Arora S. K. Stanton G. Kim H. Y. Lee K. Kim G. T. Duesberg G. S. Hallam T. Boland J. J. Wang J. J. Donegan J. F. Grunlan J. C. Moriarty G. Shmeliov A. Nicholls R. J. Perkins J. M. Grieveson E. M. Theuwissen K. McComb D. W. Nellist P. D. Nicolosi V. Two-dimensional nanosheets produced by liquid exfoliati

상세보기
Jariwala D. Sangwan V. K. Lauhon L. J. Marks T. J. Hersam M. C. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides ACS Nano 2014 8 2 1102 1120 10.1021/nn500064s 24476095

상세보기
Shen J. He Y. Wu J. Gao C. Keyshar K. Zhang X. Yang Y. Ye M. Vajtai R. Lou J. Ajayan P. M. Liquid Phase Exfoliation of Two-Dimensional Materials by Directly Probing and Matching Surface Tension Components Nano Lett. 2015 15 8 5449 5454 10.1021/acs.nanolett.5b01842 26200657

상세보기
Ge R. Wu X. Kim M. Shi J. Sonde S. Tao L. Zhang Y. Lee J. C. Akinwande D. Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides Nano Lett. 2018 18 1 434 441 10.1021/acs.nanolett.7b04342 29236504

상세보기
Xia J. Huang X. Liu L. Z. Wang M. Wang L. Huang B. Zhu D. D. Li J. J. Gu C. Z. Meng X. M. CVD synthesis of large-area, highly crystalline MoSe 2 atomic layers on diverse substrates and application to photodetectors Nanoscale 2014 6 15 8949 8955 10.1039/C4NR02311K 24965908

상세보기
Wang Q. H. Kalantar-Zadeh K. Kis A. Coleman J. N. Strano M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Nat. Nanotechnol. 2012 7 11 699 712 10.1038/nnano.2012.193 23132225

상세보기
Shi Y. Li H. Li L. J. Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques Chem. Soc. Rev. 2015 44 9 2744 2756 10.1039/C4CS00256C 25327436

상세보기
Pawbake A. S. Pawar M. S. Jadkar S. R. Late D. J. Large area chemical vapor deposition of monolayer transition metal dichalcogenides and their temperature dependent Raman spectroscopy studies Nanoscale 2016 8 5 3008 3018 10.1039/C5NR07401K 26782944

상세보기
Utama M. I. B. Lu X. Yuan Y. W. Xiong Q. H. Detrimental influence of catalyst seeding on the device properties of CVD-grown 2D layered materials: a case study on MoSe 2 Appl. Phys. Lett. 2014 105 25 253102 10.1063/1.4904945

상세보기
Hu D. Xu G. Xing L. Yan X. Wang J. Zheng J. Lu Z. Wang P. Pan X. Jiao L. Two-Dimensional Semiconductors Grown by Chemical Vapor Transport Angew. Chem., Int. Ed. 2017 56 13 3611 3615 10.1002/anie.201700439 28220992

상세보기
Lu X. Utama M. I. Lin J. Gong X. Zhang J. Zhao Y. Pantelides S. T. Wang J. Dong Z. Liu Z. Zhou W. Xiong Q. Large-area synthesis of monolayer and few-layer MoSe 2 films on SiO 2 substrates Nano Lett. 2014 14 5 2419 2425 10.1021/nl5000906 24678857

상세보기
Song X. Guo Z. Zhang Q. Zhou P. Bao W. Zhang D. W. Progress of Large-Scale Synthesis and Electronic Device Application of Two-Dimensional Transition Metal Dichalcogenides Small 2017 13 35 1700098 10.1002/smll.201700098 28722346

상세보기
Li H. Li Y. Aljarb A. Shi Y. Li L. J. Epitaxial Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Growth Mechanism, Controllability, and Scalability Chem. Rev. 2018 118 13 6134 6150 10.1021/acs.chemrev.7b00212 28682055

상세보기
Shi Y. P. Yang P. F. Jiang S. L. Zhang Z. P. Huan Y. H. Xie C. Y. Hong M. Shi J. P. Zhang Y. F. Na-assisted fast growth of large single-crystal MoS 2 on sapphire Nanotechnology 2019 30 3 034002 10.1088/1361-6528/aaea3f 30422817

상세보기
Wang Z. Xie Y. Wang H. Wu R. Nan T. Zhan Y. Sun J. Jiang T. Zhao Y. Lei Y. Yang M. Wang W. Zhu Q. Ma X. Hao Y. NaCl-assisted one-step growth of MoS 2 -WS 2 in-plane heterostructures Nanotechnology 2017 28 32 325602 10.1088/1361-6528/aa6f01 28718451

상세보기
Zhou J. Lin J. Huang X. Zhou Y. Chen Y. Xia J. Wang H. Xie Y. Yu H. Lei J. Wu D. Liu F. Fu Q. Zeng Q. Hsu C. H. Yang C. Lu L. Yu T. Shen Z. Lin H. Yakobson B. I. Liu Q. Suenaga K. Liu G. Liu Z. A library of atomically thin metal chalcogenides Nature 2018 556 7701 355 359 10.1038/s41586-018-0008-3 29670263

상세보기
Chen J. Liu B. Liu Y. Tang W. Nai C. T. Li L. Zheng J. Gao L. Zheng Y. Shin H. S. Jeong H. Y. Loh K. P. Chemical Vapor Deposition of Large-Sized Hexagonal WSe 2 Crystals on Dielectric Substrates Adv. Mater. 2015 27 42 6722 6727 10.1002/adma.201503446 26414106

상세보기
Duan X. Wang C. Shaw J. C. Cheng R. Chen Y. Li H. Wu X. Tang Y. Zhang Q. Pan A. Jiang J. Yu R. Huang Y. Duan X. Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions Nat. Nanotechnol. 2014 9 12 1024 1030 10.1038/nnano.2014.222 25262331

상세보기
Wang X. Gong Y. Shi G. Chow W. L. Keyshar K. Ye G. Vajtai R. Lou J. Liu Z. Ringe E. Tay B. K. Ajayan P. M. Chemical vapor deposition growth of crystalline monolayer MoSe 2 ACS Nano 2014 8 5 5125 5131 10.1021/nn501175k 24680389

상세보기
Terrones H. Del Corro E. Feng S. Poumirol J. M. Rhodes D. Smirnov D. Pradhan N. R. Lin Z. Nguyen M. A. Elias A. L. Mallouk T. E. Balicas L. Pimenta M. A. Terrones M. New first order Raman-active modes in few layered transition metal dichalcogenides Sci. Rep. 2014 4 4215 10.1038/srep04215 24572993

상세보기
Lu J. Carvalho A. Chan X. K. Liu H. Liu B. Tok E. S. Loh K. P. Castro Neto A. Sow C. H. Atomic healing of defects in transition metal dichalcogenides Nano Lett. 2015 15 5 3524 3532 10.1021/acs.nanolett.5b00952 25923457

상세보기
Rhyee J. S. Kwon J. Dak P. Kim J. H. Kim S. M. Park J. Hong Y. K. Song W. G. Omkaram I. Alam M. A. Kim S. High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe 2 Films on Insulating Substrates Adv. Mater. 2016 28 12 2316 2321 10.1002/adma.201504789 26755196

상세보기
Shim G. W. Yoo K. Seo S. B. Shin J. Jung D. Y. Kang I. S. Ahn C. W. Cho B. J. Choi S. Y. Large-area single-layer MoSe 2 and its van der Waals heterostructures ACS Nano 2014 8 7 6655 6662 10.1021/nn405685j 24987802

상세보기
Chen T. Hao G. Wang G. Li B. Kou L. Yang H. Zheng X. Zhong J. Controlled growth of atomically thin MoSe 2 films and nanoribbons by chemical vapor deposition 2D Mater. 2019 6 2 025002 10.1088/2053-1583/aaf9cc

상세보기
Feng Q. Zhu M. Zhao Y. Liu H. Li M. Zheng J. Xu H. Jiang Y. Chemical vapor deposition growth of sub-centimeter single crystal WSe 2 monolayer by NaCl-assistant Nanotechnology 2019 30 3 034001 10.1088/1361-6528/aaea24 30418955

상세보기
Sangwan V. K. Jariwala D. Kim I. S. Chen K.-S. Marks T. J. Lauhon L. J. Hersam M. C. Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS 2 Nat. Nanotechnol. 2015 10 5 403 10.1038/nnano.2015.56 25849785

상세보기
Fang H. Chuang S. Chang T. C. Takei K. Takahashi T. Javey A. High-performance single layered WSe 2 p-FETs with chemically doped contacts Nano Lett. 2012 12 7 3788 3792 10.1021/nl301702r 22697053

상세보기
Larentis S. Fallahazad B. Tutuc E. Field-effect transistors and intrinsic mobility in ultra-thin MoSe 2 layers Appl. Phys. Lett. 2012 101 223104 10.1063/1.4768218

상세보기
Tsai M. L. Su S. H. Chang J. K. Tsai D. S. Chen C. H. Wu C. I. Li L. J. Chen L. J. He J. H. Monolayer MoS 2 heterojunction solar cells ACS Nano 2014 8 8 8317 8322 10.1021/nn502776h 25046764

상세보기
Abderrahmane A. Ko P. J. Thu T. V. Ishizawa S. Takamura T. Sandhu A. High photosensitivity few-layered MoSe 2 back-gated field-effect phototransistors Nanotechnology 2014 25 36 365202 10.1088/0957-4484/25/36/365202 25140619

상세보기
Dai T. J. Fan X. D. Ren Y. X. Hou S. Zhang Y. Y. Qian L. X. Li Y. R. Liu X. Z. Layer-controlled synthesis of wafer-scale MoSe 2 nanosheets for photodetector arrays J. Mater. Sci. 2018 53 11 8436 8444 10.1007/s10853-018-2142-6

상세보기
Das S. R. Kwon J. Prakash A. Delker C. J. Das S. Janes D. B. Low-frequency noise in MoSe 2 field effect transistors Appl. Phys. Lett. 2015 106 8 083507 10.1063/1.4913714

상세보기
Gong Y. Ye G. Lei S. Shi G. He Y. Lin J. Zhang X. Vajtai R. Pantelides S. T. Zhou W. Li B. Ajayan P. M. Synthesis of Millimeter-Scale Transition Metal Dichalcogenides Single Crystals Adv. Funct. Mater. 2016 26 12 2009 2015 10.1002/adfm.201504633

상세보기
Jung C. Kim S. M. Moon H. Han G. Kwon J. Hong Y. K. Omkaram I. Yoon Y. Kim S. Park J. Highly Crystalline CVD-grown Multilayer MoSe 2 Thin Film Transistor for Fast Photodetector Sci. Rep. 2015 5 15313 10.1038/srep15313 26477744

상세보기
Lee H. Ahn J. Im S. Kim J. Choi W. High-Responsivity Multilayer MoSe 2 Phototransistors with Fast Response Time Sci. Rep. 2018 8 11545 10.1038/s41598-018-29942-1 30069033

상세보기
Ko P. J. Abderrahmane A. Kim N. H. Sandhu A. High-performance near-infrared photodetector based on nano-layered MoSe 2 Semicond. Sci. Technol. 2017 32 6 065015 10.1088/1361-6641/aa6819

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