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[해외논문] Changes in the Photoluminescence of Monolayer and Bilayer Molybdenum Disulfide during Laser Irradiation 원문보기

ACS omega, v.5 no.14, 2020년, pp.7903 - 7909  

Kim, Ho-Jong (Quantum Technology Institute , Korea Research Institute of Standards and Science , Daejeon 34113 , Republic of Korea) ,  Yun, Yong Ju (Department of Energy Engineering , Konkuk University , Seoul 05029 , Republic of Korea) ,  Yi, Sam Nyung (Department of Electronic Material Engineering , Korea Maritime and Ocean University , Busan 49112 , Republic of Korea) ,  Chang, Soo Kyung (Department of Physics , Yonsei University , Seoul 03722 , Republic of Korea) ,  Ha, Dong Han

Abstract AI-Helper 아이콘AI-Helper

Various postsynthesis processes for transition metal dichalcogenides have been attempted to control the layer number and defect concentration, on which electrical and optical properties strongly depend. In this work, we monitored changes in the photoluminescence (PL) of molybdenum disulfide (MoS2) u...

참고문헌 (48)

  1. Xia F. ; Wang H. ; Xiao D. ; Dubey M. ; Ramasubramaniam A. Two-dimensional material nanophotonics . Nat. Photonics 2014 , 8 , 899 ? 907 . 10.1038/nphoton.2014.271 . 

  2. Jariwala D. ; Sangwan V. K. ; Lauhon L. J. ; Marks T. J. ; Hersam M. C. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides . ACS Nano 2014 , 8 , 1102 ? 1120 . 10.1021/nn500064s . 24476095 

  3. Yun Y. J. ; Kim D. Y. ; Hong W. G. ; Ha D. H. ; Jun Y. ; Lee H.-K. Highly stretchable, mechanically stable, and weavable reduced graphene oxide yarn with high NO 2 sensitivity for wearable gas sensors . RSC Adv. 2018 , 8 , 7615 ? 7621 . 10.1039/C7RA12760J . 

  4. Yun Y. J. ; Ju J. ; Lee J. H. ; Moon S.-H. ; Park S. J. ; Kim Y. H. ; Hong W. G. ; Ha D. H. ; Jang H. ; Lee G. H. ; Chung H.-M. ; Choi J. ; Nam S. W. ; Lee S.-H. ; Jun Y. Highly Elastic Graphene-Based Electronics Toward Electronic Skin . Adv. Funct. Mater. 2017 , 27 , 1701513 10.1002/adfm.201701513 . 

  5. Radisavljevic B. ; Radenovic A. ; Brivio J. ; Giacometti V. ; Kis A. Single-layer MoS 2 transistors . Nat. Nanotechnol. 2011 , 6 , 147 ? 150 . 10.1038/nnano.2010.279 . 21278752 

  6. Tongay S. ; Zhou J. ; Ataca C. ; Liu J. ; Kang J. S. ; Matthews T. S. ; You L. ; Li J. ; Grossman J. C. ; Wu J. Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating . Nano Lett. 2013 , 13 , 2831 ? 2836 . 10.1021/nl4011172 . 23627637 

  7. Buscema M. ; Island J. O. ; Groenendijk D. J. ; Blanter S. I. ; Steele G. A. ; van der Zant H. S. J. ; Castellanos-Gomez A. Photocurrent generation with two-dimensional van der Waals semiconductors . Chem. Soc. Rev. 2015 , 44 , 3691 ? 3718 . 10.1039/C5CS00106D . 25909688 

  8. Wu J. ; Li H. ; Yin Z. ; Li H. ; Liu J. ; Cao X. ; Zhang Q. ; Zhang H. Layer Thinning and Etching of Mechanically Exfoliated MoS 2 Nanosheets by Thermal Annealing in Air . Small 2013 , 9 , 3314 ? 3319 . 10.1002/smll.201301542 . 23983108 

  9. Lu X. ; Utama M. I. B. ; Zhang J. ; Zhao Y. ; Xiong Q. Layer-by-layer thinning of MoS 2 by thermal annealing . Nanoscale 2013 , 5 , 8904 ? 8908 . 10.1039/C3NR03101B . 23921911 

  10. Han G. H. ; Chae S. J. ; Kim E. S. ; Gune F. ; Lee I. H. ; Lee S. W. ; Lee S. Y. ; Lim S. C. ; Jeong H. K. ; Jeong M. S. ; Lee Y. H. Laser Thinning for Monolayer Graphene Formation: Heat Sink and Interference Effect . ACS Nano 2011 , 5 , 263 ? 268 . 10.1021/nn1026438 . 21174409 

  11. Castellanos-Gomez A. ; Barkelid M. ; Goossens A. M. ; Calado V. E. ; van der Zant H. S. J. ; Steele G. A. Laser-Thinning of MoS 2 : On Demand Generation of a Single-Layer Semiconductor . Nano Lett. 2012 , 12 , 3187 ? 3192 . 10.1021/nl301164v . 22642212 

  12. Lu J. ; Lu J. H. ; Liu H. ; Liu B. ; Chan K. X. ; Lin J. ; Chen W. ; Loh K. P. ; Sow C. H. Improved Photoelectrical Properties of MoS 2 Films after Laser Micromachining . ACS Nano 2014 , 8 , 6334 ? 6343 . 10.1021/nn501821z . 24863730 

  13. Yang X. ; Tang S. ; Ding G. ; Xie X. ; Jiang M. ; Huang F. Layer-by-layer thinning of graphene by plasma irradiation and post-annealing . Nanotechnology 2012 , 23 , 025704 10.1088/0957-4484/23/2/025704 . 22166725 

  14. Liu Y. ; Nan H. ; Wu X. ; Pan W. ; Wang W. ; Bai J. ; Zhao W. ; Sun L. ; Wang X. ; Ni Z. Layer-by-Layer Thinning of MoS 2 by Plasma . ACS Nano 2013 , 7 , 4202 ? 4209 . 10.1021/nn400644t . 23548109 

  15. Mak K. F. ; Lee C. ; Hone J. ; Shan J. ; Heinz T. F. Atomically Thin MoS 2 : A New Direct-Gap Semiconductor . Phys. Rev. Lett. 2010 , 105 , 136805 10.1103/PhysRevLett.105.136805 . 21230799 

  16. Mak K. F. ; He K. ; Lee C. ; Lee G. H. ; Hone J. ; Heinz T. F. ; Shan J. Tightly bound trions in monolayer MoS 2 . Nat. Mater. 2013 , 12 , 207 ? 211 . 10.1038/nmat3505 . 23202371 

  17. Liu L. ; Ryu S. ; Tamasik M. R. ; Stolyarova E. ; Jung N. ; Hybertsen M. S. ; Steigerwald M. L. ; Brus L. E. ; Flynn G. W. Graphene Oxidation: Thickness-Dependent Etching and Strong Chemical Doping . Nano Lett. 2008 , 8 , 1965 ? 1970 . 10.1021/nl0808684 . 18563942 

  18. Kim H. J. ; Kim D. ; Jung S. ; Bae M.-H. ; Yi S. N. ; Watanabe K. ; Taniguchi T. ; Chang S. K. ; Ha D. H. Homogeneity and tolerance to heat of monolayer MoS 2 on SiO 2 and h-BN . RSC Adv. 2018 , 8 , 12900 ? 12906 . 10.1039/C8RA01849A . 

  19. Kim H. J. ; Kim D. ; Jung S. ; Bae M.-H. ; Yun Y. J. ; Yi S. N. ; Yu J.-S. ; Kim J.-H. ; Ha D. H. Changes in the Raman spectra of monolayer MoS 2 upon thermal annealing . J. Raman Spectrosc. 2018 , 49 , 1938 ? 1944 . 10.1002/jrs.5476 . 

  20. Ferrari A. C. ; Basko D. M. Raman spectroscopy as a versatile tool for studying the properties of graphene . Nat. Nanotechnol. 2013 , 8 , 235 ? 246 . 10.1038/nnano.2013.46 . 23552117 

  21. Tongay S. ; Suh J. ; Ataca C. ; Fan W. ; Luce A. ; Kang J. S. ; Liu J. ; Ko C. ; Raghunathanan R. ; Zhou J. ; Ogletree F. ; Li J. ; Grossman J. C. ; Wu J. Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons . Sci. Rep. 2013 , 3 , 2567 10.1038/srep02657 . 23995269 

  22. Ha D. H. ; Jung S. ; Kim H.-J. ; Kim D. ; Kim W.-J. ; Yi S. N. ; Jun Y. ; Yun Y. J. Transition of Graphene Oxide-Coated Fiber Bundles from Insulator to Conductor by Chemical Reduction . Synth. Met. 2015 , 204 , 90 ? 94 . 10.1016/j.synthmet.2015.03.018 . 

  23. Nan H. ; Wang Z. ; Wang W. ; Liang Z. ; Lu Y. ; Chen Q. ; He D. ; Tan P. ; Miao F. ; Wang X. ; Wang J. ; Ni Z. Strong Photoluminescence Enhancement of MoS 2 through Defect Engineering and Oxygen Bonding . ACS Nano 2014 , 8 , 5738 ? 5745 . 10.1021/nn500532f . 24836121 

  24. Lee C. ; Yan H. ; Brus L. E. ; Heinz T. F. ; Hone J. ; Ryu S. Anomalous Lattice Vibrations of Single- and Few-Layer MoS 2 . ACS Nano 2010 , 4 , 2695 ? 2700 . 10.1021/nn1003937 . 20392077 

  25. Oh H. M. ; Han G. H. ; Kim H. ; Bae J. J. ; Jeong M. S. ; Lee Y. H. Photochemical Reaction in Monolayer MoS 2 via Correlated Photoluminescence, Raman Spectroscopy, and Atomic Force Microscopy . ACS Nano 2016 , 10 , 5230 ? 5236 . 10.1021/acsnano.6b00895 . 27110722 

  26. Komider K. ; Gonzalez J. W. ; Fernandez-Rossier J. Large spin splitting in the conduction band of transition metal dichalcogenide monolayers . Phys. Rev. B 2013 , 88 , 245436 10.1103/PhysRevB.88.245436 . 

  27. Scheuschner N. ; Ochedowski O. ; Kaulitz A.-M. ; Gillen R. ; Schleberger M. ; Maultzsch J. Photoluminescence of freestanding single- and few-layer MoS 2 . Phys. Rev. B 2014 , 89 , 125406 10.1103/PhysRevB.89.125406 . 

  28. Ross J. S. ; Wu S. ; Yu H. ; Ghimire N. J. ; Jones A. M. ; Aivazian G. ; Yan J. ; Mandrus D. G. ; Xiao D. ; Yao W. ; Xu X. Electrical control of neutral and charged excitons in a monolayer semiconductor . Nat. Commun. 2013 , 4 , 1474 10.1038/ncomms2498 . 23403575 

  29. He Z. ; Zhao R. ; Chen X. ; Chen H. ; Zhu Y. ; Su H. ; Huang S. ; Xue J. ; Dai J. ; Cheng S. ; Liu M. ; Wang X. ; Chen Y. Defect Engineering in Single-Layer MoS 2 Using Heavy Ion Irradiation . ACS Appl. Mater. Interfaces 2018 , 10 , 42524 ? 42533 . 10.1021/acsami.8b17145 . 30427173 

  30. Ardekani H. ; Younts R. ; Yu Y. ; Cao L. ; Gundogdu K. Reversible Photoluminescence Tuning by Defect Passivation via Laser Irradiation on Aged Monolayer MoS 2 . ACS Appl. Mater. Interfaces 2019 , 11 , 38240 ? 38246 . 10.1021/acsami.9b10688 . 31502823 

  31. Lin Y. ; Ling X. ; Yu L. ; Huang S. ; Hsu A. L. ; Lee Y.-H. ; Kong J. ; Dresselhaus M. S. ; Palacios T. Dielectric Screening of Excitons and Trions in Single-Layer MoS 2 . Nano Lett. 2014 , 14 , 5569 ? 5576 . 10.1021/nl501988y . 25216267 

  32. Pei J. ; Yang J. ; Xu R. ; Zeng Y.-H. ; Myint Y. W. ; Zhang S. ; Zheng J.-C. ; Qin Q. ; Wang X. ; Jiang W. ; Lu Y. Exciton and Trion Dynamics in Bilayer MoS 2 . Small 2015 , 11 , 6384 ? 6390 . 10.1002/smll.201501949 . 26542884 

  33. Berkelbach T. C. ; Hybertsen M. S. ; Reichman D. R. Theory of neutral and charged excitons in monolayer transition metal dichalcogenides . Phys. Rev. B 2013 , 88 , 045318 10.1103/PhysRevB.88.045318 . 

  34. Zhang X. ; Nan H. ; Xiao S. ; Wan X. ; Ni Z. ; Gu X. ; Ostrikov K. Shape-Uniform, High-Quality Monolayered MoS 2 Crystals for Gate-Tunable Photoluminescence . ACS Appl. Mater. Interfaces 2017 , 9 , 42121 ? 42130 . 10.1021/acsami.7b14189 . 29111648 

  35. Zhang Y. ; Li H. ; Wang H. ; Liu R. ; Zhang S.-L. ; Qiu Z.-J. On Valence-Band Splitting in Layered MoS 2 . ACS Nano 2015 , 9 , 8514 ? 8519 . 10.1021/acsnano.5b03505 . 26222731 

  36. Chow P. K. ; Jacobs-Gedrim R. B. ; Gao J. ; Lu T.-M. ; Yu B. ; Terrones H. ; Koratkar N. Defect-Induced Photoluminescence in Monolayer Semiconducting Transition Metal Dichalcogenides . ACS Nano 2015 , 9 , 1520 ? 1527 . 10.1021/nn5073495 . 25603228 

  37. Mouri S. ; Miyauchi Y. ; Matsuda K. Tunable Photoluminescence of Monolayer MoS 2 via Chemical Doping . Nano Lett. 2013 , 13 , 5944 ? 5948 . 10.1021/nl403036h . 24215567 

  38. Kim E. ; Ko C. ; Kim K. ; Chen Y. ; Suh J. ; Ryu S.-G. ; Wu K. ; Meng X. ; Suslu A. ; Tongay S. ; Wu J. ; Grigoropoulos C. P. Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction . Adv. Mater. 2016 , 28 , 341 ? 346 . 10.1002/adma.201503945 . 26567761 

  39. Bera A. ; Muthu D. V. S. ; Sood A. K. Enhanced Raman and photoluminescence response in monolayer MoS 2 due to laser healing of defects . J. Raman Spectrosc. 2018 , 49 , 100 ? 105 . 10.1002/jrs.5196 . 

  40. Wan Y. ; Zhang H. ; Zhang K. ; Wang Y. ; Sheng B. ; Wang X. ; Dai L. Large-Scale Synthesis and Systematic Photoluminescence Properties of Monolayer MoS 2 on Fused Silica . ACS Appl. Mater. Interfaces 2016 , 8 , 18570 ? 18576 . 10.1021/acsami.6b04540 . 27338112 

  41. Buck V. Lattice Parameters of Sputtered MoS 2 Films . Thin Solid Films 1991 , 198 , 157 ? 167 . 10.1016/0040-6090(91)90334-T . 

  42. Ha D. H. ; Min H. S. ; Lee K. W. ; Byon S. ; Han G. Y. ; Lee H. K. Effects of Cation Substitution on the Oxygen Loss in YBCO Superconductors . J. Korean Phys. Soc. 2001 , 39 , 1041 ? 1045 . 

  43. Hart T. R. ; Aggarwal R. L. ; Lax B. Temperature Dependence of Raman Scattering in Silicon . Phys. Rev. B 1970 , 1 , 638 ? 642 . 10.1103/PhysRevB.1.638 . 

  44. Viera G. ; Huet S. ; Boufendi L. Crystal size and temperature measurements in nanostructured silicon using Raman spectroscopy . J. Appl. Phys. 2001 , 90 , 4175 ? 4183 . 10.1063/1.1398601 . 

  45. Dhakal K. P. ; Duong D. L. ; Lee J. ; Nam H. ; Kim M. ; Kan M. ; Lee Y. H. ; Kim J. Confocal absorption spectral imaging of MoS 2 : optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS 2 . Nanoscale 2014 , 6 , 13028 ? 13035 . 10.1039/C4NR03703K . 25247614 

  46. Barvat A. ; Prakash N. ; Satpati B. ; Singha S. S. ; Kumar G. ; Singh D. K. ; Dogra A. ; Khanna S. P. ; Singha A. ; Pal P. Emerging photoluminescence from bilayer large-area 2D MoS 2 films grown by pulsed laser deposition on different substrates . J. Appl. Phys. 2017 , 122 , 015304 10.1063/1.4991490 . 

  47. Andersson H. A. ; Manuilskiy A. ; Thungstrm G. ; Nilsson H.-E. Evaluation of an integrated Fourier-transform spectrometer utilizing a lateral effect position sensitive detector with a multi-channel Fabry?Perot interferometer . Meas. Sci. Technol. 2008 , 19 , 045306 10.1088/0957-0233/19/4/045306 . 

  48. Taube A. ; Judek J. ; Lapiska A. ; Zdrojek M. Temperature-Dependent Thermal Properties of Supported MoS 2 Monolayers . ACS Appl. Mater. Interfaces 2015 , 7 , 5061 ? 5065 . 10.1021/acsami.5b00690 . 25706435 

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