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NTIS 바로가기Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI, 2003, 2003년, pp.36 - 40
Sonnemans, R. (Axcelis Technol. Inc., Rockville, MD, USA) , Waldfried, C. , Rastegar, A. , Broekaart, M.
The benefits of H2O-vapor, when added to a downstream plasma for post-via etch residue removal is discussed. This paper provides results of the polymer removal effectiveness of a FOx low-k post-via-etch application when H2O vapor is added to the clean process plasma. Two significant findings are presented: (1) The importance of maintaining a low temperature during the residue removal step in order to prevent the 'hardening' of the residues, and (2) the benefit of using an intermediate plasma-free step that includes H2O-vapor, for effective removal. Polymers were observed to separate from the sidewall during processes with the intermediate H2O vapor step and rendered removable in a subsequent DI water rinse. This resulted in a significant enhancement of the yield, compared to the standard high temperature H2O-vapor-free process of record.
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