The new wide-bandgap oxide semiconductor, gallium oxide (Ga2O3), has gained attraction as a promising candidate for power device applications because of its excellent material properties and suitability for mass production. The Baliga's figure of merit of Ga2O3 is expected to be much larger than tho...
The new wide-bandgap oxide semiconductor, gallium oxide (Ga2O3), has gained attraction as a promising candidate for power device applications because of its excellent material properties and suitability for mass production. The Baliga's figure of merit of Ga2O3 is expected to be much larger than those of SiC and GaN due primarily to Ga2O3's extremely large bandgap of 4.5~4.9 eV, which will enable Ga2O3 power devices with higher breakdown voltage (Vbr) and efficiency than SiC and GaN devices [1]. The other important advantage of Ga2O3 is that large, high-quality bulk single crystals can be grown by using melt growth methods. Recently, we developed a homoepitaxial growth technique for high-purity Ga2O3 thin films on single-crystal Ga2O3 substrates by halide vapor phase epitaxy (HVPE) [2, 3]. This is the first report on Ga2O3 Schottky barrier diodes (SBDs) with epitaxial Si-doped n--Ga2O3 drift layers grown by HVPE.
The new wide-bandgap oxide semiconductor, gallium oxide (Ga2O3), has gained attraction as a promising candidate for power device applications because of its excellent material properties and suitability for mass production. The Baliga's figure of merit of Ga2O3 is expected to be much larger than those of SiC and GaN due primarily to Ga2O3's extremely large bandgap of 4.5~4.9 eV, which will enable Ga2O3 power devices with higher breakdown voltage (Vbr) and efficiency than SiC and GaN devices [1]. The other important advantage of Ga2O3 is that large, high-quality bulk single crystals can be grown by using melt growth methods. Recently, we developed a homoepitaxial growth technique for high-purity Ga2O3 thin films on single-crystal Ga2O3 substrates by halide vapor phase epitaxy (HVPE) [2, 3]. This is the first report on Ga2O3 Schottky barrier diodes (SBDs) with epitaxial Si-doped n--Ga2O3 drift layers grown by HVPE.
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