Fedeli, P.
(CNR-IMM of Bologna, via Gobetti 101, I-4029 Bologna, Italy)
,
Puzzanghera, M.
(CNR-IMM of Bologna, via Gobetti 101, I-4029 Bologna, Italy)
,
Moscatelli, F.
(CNR-IMM of Bologna, via Gobetti 101, I-4029 Bologna, Italy)
,
Minamisawa, R. A.
(ABB Corporate Research, Segelhofstrasse 1K, 5405 Baden-Dä)
,
Alfieri, G.
(ttwil, Switzerland)
,
Grossner, U.
(ABB Corporate Research, Segelhofstrasse 1K, 5405 Baden-Dä)
,
Nipoti, R.
(ttwil, Switzerland)
Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. This study shows that an Al-Ti bilayer with an Al to Ti atomic ratio suitable for ohmic contacts on p-type 4H-SiC can be covered by a Ni film during the high temperature a...
Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. This study shows that an Al-Ti bilayer with an Al to Ti atomic ratio suitable for ohmic contacts on p-type 4H-SiC can be covered by a Ni film during the high temperature alloying process, without altering the ohmic nature, while eliminating a detrimental contact morphology caused by the presence of molten Al-Si during alloying. On 1×1020 cm−3 Al-implanted 4H-SiC layer, the RT specific contact resistance of this Ni-Al-Ti contact measured by TLM-C method is (3 ± 1)×10−6 Ωcm2.
Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. This study shows that an Al-Ti bilayer with an Al to Ti atomic ratio suitable for ohmic contacts on p-type 4H-SiC can be covered by a Ni film during the high temperature alloying process, without altering the ohmic nature, while eliminating a detrimental contact morphology caused by the presence of molten Al-Si during alloying. On 1×1020 cm−3 Al-implanted 4H-SiC layer, the RT specific contact resistance of this Ni-Al-Ti contact measured by TLM-C method is (3 ± 1)×10−6 Ωcm2.
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