Jallorina, Michael Paul
(Nara Institute of Science and Technology, Graduate School of Materials Science, 8916-5 Takayama, Ikoma, Nara 630-0192 Japan)
,
Bermundo, Juan Paolo
(Nara Institute of Science and Technology, Graduate School of Materials Science, 8916-5 Takayama, Ikoma, Nara 630-0192 Japan)
,
Ishikawa, Yasuaki
(Nara Institute of Science and Technology, Graduate School of Materials Science, 8916-5 Takayama, Ikoma, Nara 630-0192 Japan)
,
Uraoka, Yukiharu
(Nara Institute of Science and Technology, Graduate School of Materials Science, 8916-5 Takayama, Ikoma, Nara 630-0192 Japan)
Realizing a low temperature annealing process for next-generation, transparent, and flexible displays is necessary. Here, we annealed the channel at different conditions: ultraviolet (UV), ozone (O3), wet oxygen (Wet O2), and a combination of the two: UV & O3, UV & Wet O2. Results show that dry ambi...
Realizing a low temperature annealing process for next-generation, transparent, and flexible displays is necessary. Here, we annealed the channel at different conditions: ultraviolet (UV), ozone (O3), wet oxygen (Wet O2), and a combination of the two: UV & O3, UV & Wet O2. Results show that dry ambient UV & O3 annealing at 150°C has higher mobility (0.36 cm2/Vs) and decent subthreshold swing (120 mV/dec) than other dry processes. As for the devices annealed with wet O2, the device annealed at 150°C in pure wet O2 ambient showed the highest mobility at 5 cm2/Vs. SIMS measurements were done to measure any changes in the chemical composition found in the a-IGZO bulk to further identify the best annealing condition.
Realizing a low temperature annealing process for next-generation, transparent, and flexible displays is necessary. Here, we annealed the channel at different conditions: ultraviolet (UV), ozone (O3), wet oxygen (Wet O2), and a combination of the two: UV & O3, UV & Wet O2. Results show that dry ambient UV & O3 annealing at 150°C has higher mobility (0.36 cm2/Vs) and decent subthreshold swing (120 mV/dec) than other dry processes. As for the devices annealed with wet O2, the device annealed at 150°C in pure wet O2 ambient showed the highest mobility at 5 cm2/Vs. SIMS measurements were done to measure any changes in the chemical composition found in the a-IGZO bulk to further identify the best annealing condition.
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