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NTIS 바로가기Devices, Circuits and Systems (ICDCS), 2018 4th International Conference on, 2018 Mar, 2018년, pp.241 - 244
Nithin Kumar, N.R. (Dept. of electronics and communication engineering, Dayananda Sagar College of Engineering, Bengaluru, India) , Vimala, P. (Dept. of electronics and communication engineering, Dayananda Sagar College of Engineering, Bengaluru, India)
This paper presents a 2D analytical surface potential model and lateral electric field for undoped double gate (DG) tunnel field effect transistors (TFETs). With suitable boundary condition 2D Poisson’s equation is solved by using superposition method. The Surface potential and lateral electr...
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