Srivastava, Aseem
(Varian Semiconductor Equipment, Applied Materials, Gloucester, MA, USA)
,
Raj, Deven
(Varian Semiconductor Equipment, Applied Materials, Gloucester, MA, USA)
,
Parkhe, Vijay
(Hot e-chuck center of excellence, Applied Materials, Santa Clara, CA, USA)
,
Anella, Steven
(Varian Semiconductor Equipment, Applied Materials, Gloucester, MA, USA)
,
Marcelynas, Stacia
(Varian Semiconductor Equipment, Applied Materials, Gloucester, MA, USA)
,
Sun, Yong
(Dielectric Deposition Systems, Applied Materials, Santa Clara, CA, USA)
,
Lee, Jung Chan
(Dielectric Deposition Systems, Applied Materials, Santa Clara, CA, USA)
,
Jha, Praket
(Dielectric Deposition Systems, Applied Materials, Santa Clara, CA, USA)
,
Liang, Jingmei
(Dielectric Deposition Systems, Applied Materials, Santa Clara, CA, USA)
The plasma doping (PLAD) tool from Applied Materials Varian Semiconductor Equipment consists of an inductively coupled RF ion source and a backside helium-cooled platen with a pulsed negative DC bias to which the wafer is electrostatically clamped. Standard implant using PLAD is done at room tempera...
The plasma doping (PLAD) tool from Applied Materials Varian Semiconductor Equipment consists of an inductively coupled RF ion source and a backside helium-cooled platen with a pulsed negative DC bias to which the wafer is electrostatically clamped. Standard implant using PLAD is done at room temperature, or up to 70 C. As process development advances there are several applications that can benefit from heated implants. The PLAD chamber has now been modified to add this capability. Using production-proven expertise of the Applied Materials Center of Excellence in Heated e-chucks, two platens have been designed to fit the PLAD chamber covering two specific applications-oriented temperature ranges. These Aurora platens are described in this paper along with initial results on a variety of doping and precision materials modification (PMM) applications.
The plasma doping (PLAD) tool from Applied Materials Varian Semiconductor Equipment consists of an inductively coupled RF ion source and a backside helium-cooled platen with a pulsed negative DC bias to which the wafer is electrostatically clamped. Standard implant using PLAD is done at room temperature, or up to 70 C. As process development advances there are several applications that can benefit from heated implants. The PLAD chamber has now been modified to add this capability. Using production-proven expertise of the Applied Materials Center of Excellence in Heated e-chucks, two platens have been designed to fit the PLAD chamber covering two specific applications-oriented temperature ranges. These Aurora platens are described in this paper along with initial results on a variety of doping and precision materials modification (PMM) applications.
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