Abstract ▼ AI-Helper

In this paper, a cylindrical GAA NWFET (Gate All around Nano wire Field Effect Transistor) is compared with a rectangular GAA NWMBCFET (Gate All around Nano Wire Multi Bridge Channel Field Effect Transistor) for sub 35nm devices using TCAD (Technology Computer Aided Design) simulation tool. In a rec...

In this paper, a cylindrical GAA NWFET (Gate All around Nano wire Field Effect Transistor) is compared with a rectangular GAA NWMBCFET (Gate All around Nano Wire Multi Bridge Channel Field Effect Transistor) for sub 35nm devices using TCAD (Technology Computer Aided Design) simulation tool. In a rectangular GAA NWMBCFET a total of 6 thin channels instead of one channel are created with equal distance in vertical and horizontal stacking. The device performance using coupled Drift-diffusion (DD) method and Shockley-Read-Hall Recombination method (SRH) has been numerically evaluated. Comparisons have been performed between cylindrical GAA NWFET and rectangular GAA NWFET, as well as between rectangular GAA NWFET and rectangular GAA NWMBCFET using TCAD numerical simulation calibrations to evaluate the transfer and output characteristics. Due to the presence of Ultra-Thin Body (UTB) in the multi bridge channel the current drive of the device is increased. The reduction in influence of short channel effects has been addressed by the GAA structure.