A pn junction solar cell includes a pn junction structure including a p-type and a n-type semiconducting layer, a front contact electrode formed on the front surface of the pn junction structure through a contact pattern having a constant width, and a rear contact electrode formed on a rear surface
A pn junction solar cell includes a pn junction structure including a p-type and a n-type semiconducting layer, a front contact electrode formed on the front surface of the pn junction structure through a contact pattern having a constant width, and a rear contact electrode formed on a rear surface of the pn structure. The front contact electrode is reduced in its width as it goes away from a terminal.
대표청구항▼
1. A pn junction solar cell, comprising:a pn junction structure comprising a p-type and an n-type semiconductor layer; a front contact electrode formed on the front surface of the pn junction structure through a contact pattern having a constant width, the front contact electrode being reduced in a
1. A pn junction solar cell, comprising:a pn junction structure comprising a p-type and an n-type semiconductor layer; a front contact electrode formed on the front surface of the pn junction structure through a contact pattern having a constant width, the front contact electrode being reduced in a width as it goes away from a terminal; and a rear contact electrode formed on a rear surface of the pn structure. 2. The pn junction solar cell of claim 1, further comprised of at least one of the p-type and a n-type semiconductor layer being formed of Si. 3. The pn junction solar cell of claim 1, further comprised of a plurality of the front contact electrode forming branches being arranged in an identical direction, and the branches being collected at a common electrode which electrically interconnects proximal ends of the branches and a front electrode terminal. 4. The pn junction solar cell of claim 1, further comprised of a shape of the front contact electrode being a triangle. 5. The pn junction solar cell of claim 1, further comprising a buffer formed between the front surface of the pn junction structure and the front contact electrode. 6. The pn junction solar cell of claim 5, with the buffer being formed of a material selected from the group consisting essentially of Ni, Cr, Co, Ti, and a mixture thereof. 7. The pn junction solar cell of claim 6, with the buffer comprising an interfacial silicide layer. 8. The pn junction solar cell of claim 1, further comprised of the front and rear contact electrodes being formed of a material selected from the group consi sting essentially of Cu, Ag, and a mixture thereof. 9. The pn junction solar cell of claim 1, further comprised of the front and rear contact electrodes being formed by an electroplating method or electroless plating method. 10. The pn junction solar cell of claim 1, further comprising a metal layer formed between the rear contact electrode and rear surface, the metal layer being selected from the group consisting essentially of Ti single layer, Pd single layer, and Ti and Pd double layer. 11. A solar cell, comprising:a first-conductive-type Si substrate having front and rear surfaces; a second-conductive-type layer formed on the front surface of the substrate; a heavily doped second-conductive-type layer formed in portions of the second-conductive-type layer; a front oxide layer formed on the second-conductive-type layer and having a contact pattern exposing the heavily doped second-conductive-type layer, the front contact pattern having a constant width; a front contact electrode formed on the front oxide layer while being connected to the heavily doped second-conductive-type layer through the contact pattern, the front contact electrode being reduced in a width as it goes away from a front electrode terminal; a heavily doped first-conductive-type layer formed in portions of the rear surface of the substrate; a rear oxide layer formed on the rear surface of the substrate and having a contact pattern exposing the heavily doped first-conductive-type layer; and a rear contact electrode formed on the rear oxide layer while being connected to the heavily doped first -conductive-type layer. 12. The solar cell of claim 11, further comprised of a plurality of the front contact electrode forming branches being arranged in an identical direction, and the branches being collected at a common electrode which electrically interconnects proximal ends of the branches and the front electrode terminal. 13. The solar cell of claim 11, further comprised of a shape of the front contact electrode being a triangle. 14. The solar cell of claim 11, further comprised of the front surface of the first-conductive-type substrate being patterned to have a plurality of reverse pyramidal grooves. 15. The solar cell of claim 11, further comprising a buffer formed on the heavily doped second-conductive-type layer. 16. The solar cell of claim 15, further comprised of the buffer being formed of a material selected from the group consisting essentially of Ni, Cr, Co, Ti, and a mixture thereof. 17. The solar cell of claim 16, with the buffer comprising a silicide layer. 18. The solar cell of claim 11, further comprised of the front and rear contact electrodes being formed of a material selected from the group consisting essentially of Cu, Ag, and a mixture thereof. 19. The solar cell of claim 11, further comprised of the front and rear contact electrodes being formed by an electroplating method or electroless plating method. 20. The solar cell of claim 11, further comprising a metal layer formed on the rear contact electrode, the metal layer being selected from the group consisting essentially of Ti single layer, Pd single layer, and Ti and Pd double layer.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.