IPC분류정보
국가/구분 |
United States(US) Patent
공개
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0615372
(2006-12-22)
|
공개번호 |
US-0149956
(2008-06-26)
|
발명자
/ 주소 |
- Mueller Mach,Regina B.
- Mueller,Gerd O.
- Krames,Michael R.
- Schmidt,Peter J.
- Bechtel,Hans Helmut
|
출원인 / 주소 |
- PHILIPS LUMILEDS LIGHTING COMPANY, LLC
- KONINKLIJKE PHILIPS ELECTRONICS N.V.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
0 인용 특허 :
0 |
초록
▼
A ceramic body is disposed in a path of light emitted by a light source. The light source may include a semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region. The ceramic body includes a plurality of first grains configured to absorb light
A ceramic body is disposed in a path of light emitted by a light source. The light source may include a semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region. The ceramic body includes a plurality of first grains configured to absorb light emitted by the light source and emit light of a different wavelength, and a plurality of second grains. For example, the first grains may be grains of luminescent material and the second grains may be grains of a luminescent material host matrix without activating dopant.
대표청구항
▼
What is being claimed is: 1. A device comprising: a light source; and a ceramic body disposed in a path of light emitted by the light source, wherein the ceramic body comprises: a plurality of first grains configured to absorb first light emitted by the light source and emit second light of a diffe
What is being claimed is: 1. A device comprising: a light source; and a ceramic body disposed in a path of light emitted by the light source, wherein the ceramic body comprises: a plurality of first grains configured to absorb first light emitted by the light source and emit second light of a different wavelength from the first light; and a plurality of second grains. 2. The device of claim 1 wherein the light source comprises a semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region. 3. The device of claim 2 wherein the ceramic body is configured to scatter light emitted by the light emitting region. 4. The device of claim 2 wherein the second grains are transparent to the first light. 5. The device of claim 2 wherein: the first grains comprise a host matrix and an activating dopant; and the second grains comprise the host matrix without any activating dopant. 6. The device of claim 5 wherein the activating dopant is Ce. 7. The device of claim 5 wherein the activating dopant is Eu. 8. The device of claim 2 wherein the first grains are dispersed over a plurality of regions in the ceramic body, wherein the plurality of regions are separated by second grains. 9. The device of claim 8 wherein: the first grains comprise a host matrix and an activating dopant; and within a region of first grains, a first grain proximate a center of the region has a higher concentration of activating dopant than a first grain proximate an edge of the region. 10. The device of claim 2 wherein: the first grains comprise a host matrix and a first activating dopant; and the second grains comprise the host matrix and a second activating dopant. 11. The device of claim 10 wherein the second grains are configured to absorb first light and emit third light of a different wavelength from the first light and the second light. 12. The device of claim 10 wherein the ceramic body further comprises third grains comprising the host matrix without any activating dopant. 13. The device of claim 10 wherein: the first activating dopant is Ce; and the second activating dopant is Eu. 14. The device of claim 10 wherein the host matrix is Ca1-x-yMyAl1+a-b+xBbSi1-aN 3-aOa, where M=(Mg, Sr, Ba), B=(B, Ga), 0.001≦x≦0.02, 0≦y≦1, 0.0005≦a≦1, 0≦b≦1. 15. The device of claim 10 wherein the host matrix is (Lu1-x-y-a-bYxGdy)3(Al1-z-uGa zSiu)5O12-uNu wherein 0≦x≦1, 0≦y≦1, 016. The device of claim 2 wherein the ceramic body is disposed on a surface of the semiconductor structure. 17. The device of claim 2 wherein the first light is blue and the second light is yellow or green. 18. The device of claim 2 wherein the first grains are (Lu1-x-y-a-bYxGdy)3(Al1-z-uGa zSiu)5O12-uNu:CeaPr b wherein 0≦x≦1, 0≦y≦1, 019. The device of claim 2 wherein the first light is blue and the second light is red. 20. The device of claim 2 wherein the first grains are (Ca1-x-y-zSrxBayMgz)1-nAl 1+a+bSi1-a-bN3-bOb:Mn wherein 0≦x≦1, 0≦y≦1, 0≦z≦1, 0≦a≦1, 0≦b≦1, 0≦n≦1, a≦n, and M is a metal selected from the group of Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu or mixtures thereof. 21. The device of claim 2 wherein the first grains are Ca(Al,Si)2N3. 22. The device of claim 2 further comprising a wavelength converting material disposed in a path of light emitted by the light emitting region, the wavelength converting material being configured to absorb the first light and emit third light of a different wavelength from the first light. 23. The device of claim 22 wherein: the ceramic body is a first ceramic body; and the wavelength converting material is included in a second ceramic body. 24. The device of claim 2 further comprising: first and second contacts electrically connected to the n-type region and the p-type region; and a cover disposed over the light emitting region. 25. The device of claim 2 wherein the semiconductor structure comprises a plurality of III-nitride semiconductor layers.
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