READILY SINTERABLE SILICON CARBIDE POWDER AND SILICON CARBIDE CERAMIC SINTERED BODY
원문보기
IPC분류정보
국가/구분
United States(US) Patent
공개
국제특허분류(IPC7판)
C04B-035/571
C04B-035/575
C04B-035/645
출원번호
US-0985718
(2012-02-28)
공개번호
US-0323152
(2013-12-05)
우선권정보
JP-2011-050581 (2011-03-08)
국제출원번호
PCT/JP2012/054904
(2012-02-28)
§371/§102 date
20130815
(20130815)
발명자
/ 주소
Aoki, Yoshitaka
Yanaizumi, Kazuhide
출원인 / 주소
SHIN-ETSU CHEMICAL CO., LTD.
인용정보
피인용 횟수 :
0인용 특허 :
0
초록▼
Provided are: a readily sinterable silicon carbide powder substantially having a stoichiometric composition and from which a dense sintered body can be obtained; a silicon carbide ceramic sintered body having a low specific resistance; and a production method thereof. This readily sinterable silicon
Provided are: a readily sinterable silicon carbide powder substantially having a stoichiometric composition and from which a dense sintered body can be obtained; a silicon carbide ceramic sintered body having a low specific resistance; and a production method thereof. This readily sinterable silicon carbide powder has a carbon/silicon elemental ratio of 0.96 to 1.04, an average particle diameter of 1.0 to 100 μm, and a ratio of 20% or less of an integrated value of an absorption intensity in a chemical shift range of 0 to 30 ppm to an integrated value of an absorption intensity in a chemical shift range of 0 to 170 ppm, in a 13C-NMR spectrum. By sintering this silicon carbide powder under pressure, there can be produced a dense sintered body having a low specific resistance and a high purity.
대표청구항▼
1. A readily sinterable silicon carbide powder having: a carbon/silicon elemental ratio of 0.96 to 1.04;an average particle diameter of 1.0 to 100 μm; anda ratio of 20% or less of an integrated value of an absorption intensity in a chemical shift range of 0 to 30 ppm to an integrated value of an abs
1. A readily sinterable silicon carbide powder having: a carbon/silicon elemental ratio of 0.96 to 1.04;an average particle diameter of 1.0 to 100 μm; anda ratio of 20% or less of an integrated value of an absorption intensity in a chemical shift range of 0 to 30 ppm to an integrated value of an absorption intensity in a chemical shift range of 0 to 170 ppm, in a 13C-NMR spectrum. 2. A method for producing the readily sinterable silicon carbide powder as set forth in claim 1, comprising obtaining a silicon carbide powder by thermally decomposing a cured silicone powder in a non-oxidizing atmosphere. 3. The method for producing the readily sinterable silicon carbide powder according to claim 2, comprising a step of pulverizing the obtained silicon carbide powder to a required average particle diameter. 4. A silicon carbide powder-based composition comprising: the readily sinterable silicon carbide powder as set forth in claim; andan organic binder, a carbon powder or a combination thereof. 5. A ceramic sintered body of silicon carbide having: a carbon/silicon elemental ratio of 0.96 to 1.04; anda specific resistance of 1 Ω·cm or less. 6. The ceramic sintered body according to claim 5, having: a nitrogen content of smaller than 0.1% by mass; anda total content of Fe, Cr, Ni, Al, Ti, Cu, Na, Zn, Ca, Zr, Mg and B of less than 1 ppm. 7. A method for producing the ceramic sintered body of silicon carbide as set forth in claim 5, comprising performing pressure sintering on solely the readily sinterable silicon carbide powder as set forth in claim 1, or on a composition containing said readily sinterable silicon carbide powder and at least one of an organic binder and a carbon powder. 8. The method according to claim 7, wherein either said readily sinterable silicon carbide powder or said composition containing said readily sinterable silicon carbide powder and at least one of an organic binder and a carbon powder is formed in a molding method into a required shape, and then the resulting molded product is subjected to said pressure sintering. 9. The method according to claim 8, wherein said molding method is press molding or extrusion molding. 10. The method according to claim 8, wherein said molding is performed through press molding, and then through CIP molding. 11. The method according to claim 7, wherein said pressure sintering is performed at a temperature of 1,900 to 2,400° C. and at a pressure of 20 MPa or higher in a non-oxidizing atmosphere. 12. The method according to claim 11, wherein said non-oxidizing atmosphere is an inert gas atmosphere. 13. The method according to claim 12, wherein said inert gas is an argon gas. 14. The method according to claim 7, wherein said pressure sintering is performed through one of or a combination of two or more of hot press sintering, HIP sintering and plasma sintering. 15. The method according to claim 7, wherein said pressure sintering is performed through a combination of hot press sintering and following HIP sintering. 16. The method according to claim 7, wherein the method further comprises firing in an air atmosphere the sintered body obtained through said pressure sintering. 17. The method according to claim 16, wherein said firing in the air atmosphere is performed at a temperature of 500 to 1,100° C.
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