Si/C COMPOSITE, METHOD OF PREPARING THE SAME, AND ANODE ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY INCLUDING THE Si/C COMPOSITE
원문보기
IPC분류정보
국가/구분
United States(US) Patent
공개
국제특허분류(IPC7판)
H01M-004/36
H01M-004/04
출원번호
US-0272636
(2014-05-08)
공개번호
US-0242455
(2014-08-28)
우선권정보
KR-10-2013-0017319 (2013-02-19)
발명자
/ 주소
Ryu, Ji Hoon
Park, Hong Kyu
Jung, Wang Mo
Kang, Sung Joong
Jo, Chi Ho
Han, Gi Beom
출원인 / 주소
LG Chem, Ltd.
인용정보
피인용 횟수 :
0인용 특허 :
0
초록▼
Provided are a Si/C composite, in which carbon (C) is dispersed in an atomic state in a silicon (Si) particle, and a method of preparing the Si/C composite. Since the Si/C composite of the present invention is used as an anode active material, electrical conductivity may be further improved and volu
Provided are a Si/C composite, in which carbon (C) is dispersed in an atomic state in a silicon (Si) particle, and a method of preparing the Si/C composite. Since the Si/C composite of the present invention is used as an anode active material, electrical conductivity may be further improved and volume expansion may be minimized. Thus, life characteristics of a lithium secondary battery may be improved.
대표청구항▼
1. A Si/C composite in which carbon (C) is dispersed in an atomic state in a silicon (Si) particle. 2. The Si/C composite of claim 1, wherein a molar ratio of C to Si, a C/Si ratio, in the Si/C composite is greater than 0 and less than 18. 3. The Si/C composite of claim 1, wherein an amount of carbo
1. A Si/C composite in which carbon (C) is dispersed in an atomic state in a silicon (Si) particle. 2. The Si/C composite of claim 1, wherein a molar ratio of C to Si, a C/Si ratio, in the Si/C composite is greater than 0 and less than 18. 3. The Si/C composite of claim 1, wherein an amount of carbon is in a range of 1 wt % to 50 wt % based on a total weight of the Si/C composite. 4. The Si/C composite of claim 1, wherein a particle diameter of the Si/C composite is in a range of 10 nm to 100 μm. 5. The Si/C composite of claim 1, wherein a carbon coating layer is further comprised on a surface of the Si/C composite particle. 6. A method of preparing a Si/C composite, the method comprising: i) mixing an aromatic group-containing silicon alkoxide compound expressed by Chemical Formula 1 with an organic solvent to form a SiO2/C composite;ii) mixing the SiO2/C composite obtained in step i) with an alkali metal or an alkaline earth metal and heat treating the mixture in an inert atmosphere to reduce SiO2; andiii) acid treating the heat-treated product obtained in step ii) to remove an oxide, SiR1nR24-n where,R1 is a phenyl group,R2 is an alkoxy group of C1 to C4, andn is 1 to 3. 7. The method of claim 6, wherein the aromatic group-containing silicon alkoxide compound is any one selected from the group consisting of phenyltriethoxysilane (PTES), phenyltrimethoxysilane (PTMS), and diphenyldiethoxysilane (DDES), or a mixture of two or more thereof. 8. The method of claim 7, wherein the aromatic group-containing silicon alkoxide compound is PTES. 9. The method of claim 6, wherein an amount of the aromatic group-containing silicon alkoxide compound is in a range of 0.1 parts by weight to 20 parts by weight based on the organic solvent. 10. The method of claim 6, further comprising adding a linear silicon alkoxide compound to the organic solvent in step i). 11. The method of claim 10, wherein the linear silicon alkoxide compound is any one selected from the group consisting of tetraethyl orthosilicate (TEOS), tetramethyl orthosilicate (TMOS), tetrapropyl orthosilicate (TPOS), and tetrabutyl orthosilicate (TBOS), or a mixture of two or more thereof. 12. The method of claim 11, wherein the linear silicon alkoxide compound is TEOS or TMOS. 13. The method of claim 10, wherein a mixing ratio of the aromatic group-containing silicon alkoxide compound to the linear silicon alkoxide compound is in a range of 1:0.3 to 1:60 as a molar ratio. 14. The method of claim 6, wherein the alkali metal is lithium, sodium, potassium, rubidium, cesium, or francium. 15. The method of claim 6, wherein the alkaline earth metal is beryllium, magnesium, calcium, strontium, barium, or radium. 16. The method of claim 6, wherein the heat treatment of step ii) is performed in a temperature range of 350° C. to 1400° C. 17. The method of claim 6, further comprising coating a surface of the Si/C composite with carbon by mixing the Si/C composite with a carbon precursor after step iii). 18. The method of claim 17, wherein the coating is performed in a temperature range of 300° C. to 1400° C. 19. The method of claim 17, wherein the carbon precursor is pitch or a hydrocarbon-based material. 20. A Si/C composite prepared according to claim 6. 21. The Si/C composite of claim 20, wherein a ratio of C to Si, a C/Si ratio, in the Si/C composite is greater than 0 and less than 18. 22. The Si/C composite of claim 20, wherein a particle diameter of the Si/C composite is in a range of 10 nm to 100 μm. 23. The Si/C composite of claim 20, wherein a carbon coating layer is formed on a surface of the Si/C composite particle. 24. An anode active material comprising the Si/C composite of claim 20. 25. An anode comprising the anode active material of claim 24. 26. A lithium secondary battery comprising: a cathode;an anode;a separator disposed between the cathode and the anode; andan electrolyte having a lithium salt dissolved therein,wherein the anode is the anode of claim 25.
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