PLASMA DICING METHOD AND PLASMA DICING APPARATUS
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IPC분류정보
국가/구분
United States(US) Patent
공개
국제특허분류(IPC7판)
H01L-021/78
C23C-016/513
H01J-037/32
H01L-021/67
H01L-021/3065
출원번호
US-0481110
(2014-09-09)
공개번호
US-0262879
(2015-09-17)
우선권정보
JP-2014-053705 (2014-03-17)
발명자
/ 주소
Sakai, Takayuki
출원인 / 주소
Sakai, Takayuki
인용정보
피인용 횟수 :
0인용 특허 :
0
초록▼
According to one embodiment, the plasma dicing method includes a deposition process depositing a film on the dicing region and on the metal electrodes exposed to the pad opening in an atmosphere containing a plasma of a first gas. The plasma dicing method includes an etching process etching the film
According to one embodiment, the plasma dicing method includes a deposition process depositing a film on the dicing region and on the metal electrodes exposed to the pad opening in an atmosphere containing a plasma of a first gas. The plasma dicing method includes an etching process etching the film by applying a first bias power to a lower electrode supporting the wafer in an atmosphere containing a plasma of a second gas. The substrate is etched by reducing the first bias power to a second bias power when light emission due to etching of the substrate at the dicing region is detected during the etching process.
대표청구항▼
1. A plasma dicing method for plasma etching a substrate at a dicing region between a plurality of semiconductor layers in a wafer, the wafer including the substrate, the plurality of semiconductor layers formed on the substrate separated from each other, metal electrodes provided on each of the sem
1. A plasma dicing method for plasma etching a substrate at a dicing region between a plurality of semiconductor layers in a wafer, the wafer including the substrate, the plurality of semiconductor layers formed on the substrate separated from each other, metal electrodes provided on each of the semiconductor layers, and a passivation film covering the semiconductor layers, the passivation film having pad openings exposing a portion of the metal electrodes, comprising: a deposition process depositing a film on the dicing region and on the metal electrodes exposed to the pad opening in an atmosphere containing a plasma of a first gas; andan etching process etching the film by applying a first bias power to a lower electrode supporting the wafer in an atmosphere containing a plasma of a second gas,the substrate being etched by reducing the first bias power to a second bias power when light emission due to etching of the substrate at the dicing region is detected during the etching process. 2. The method according to claim 1, wherein an incident ion energy to the wafer when the second bias power is applied to the lower electrode, is lower than an energy to sputter the metal electrode. 3. The method according to claim 1, wherein the substrate at the dicing region is etched by the deposition process and the etching process being alternately repeated a plurality of times. 4. The method according to claim 1, wherein an aspect ratio of the pad opening is less than an aspect ratio of the dicing region. 5. The method according to claim 1, wherein the substrate is a silicon substrate. 6. The method according to claim 1, wherein the first gas includes fluorocarbon-based gas and the second gas includes fluorine-based gas. 7. The method according to claim 6, wherein the first gas includes C4F8 and the second gas includes SF6. 8. The method according to claim 1, wherein the passivation film includes polyimide. 9. The method according to claim 1, wherein the passivation film includes silicon oxide. 10. The method according to claim 1, wherein the metal electrode includes aluminum. 11. A plasma dicing apparatus, comprising: a processing chamber capable of maintaining a plasma atmosphere;a lower electrode supporting a wafer in the processing chamber, the wafer including a substrate, a plurality of semiconductor layers formed on the substrate separated from each other, metal electrodes provided on each of the semiconductor layers, and a passivation film covering the semiconductor layers, the passivation film having pad openings exposing a portion of the metal electrode;a power source applying a bias power to the lower electrode;a sensor detecting light emission due to etching of the substrate; anda control unit that can switch between a deposition process and an etching process, the deposition process depositing a film on the dicing region between the plurality of semiconductor layers and the metal electrodes exposed to the pad opening in an atmosphere containing a plasma of a first gas, the etching process etching the film by applying a first bias power to the lower electrode in an atmosphere containing a plasma of a second gas, the control unit reducing the first bias power to a second bias power when etching of the substrate is detected by the sensor during the etching process. 12. The apparatus according to claim 11, wherein an incident ion energy to the wafer when the second bias power is applied to the lower electrode, is lower than an energy to sputter the metal electrode. 13. The apparatus according to claim 11, wherein the control unit switches between the deposition process and the etching process alternately a plurality of times. 14. The apparatus according to claim 11, wherein an aspect ratio of the pad opening is less than an aspect ratio of the dicing region. 15. The apparatus according to claim 11, wherein the substrate is a silicon substrate. 16. The apparatus according to claim 11, wherein the passivation film includes polyimide. 17. The apparatus according to claim 11, wherein the passivation film includes silicon oxide. 18. The apparatus according to claim 11, wherein the metal electrode includes aluminum.
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