A multilayer reflection electrode film includes a Ag film that is formed of Ag or an Ag alloy; and a transparent conductive oxide film that is disposed on the Ag film, in which the transparent conductive oxide film is formed of an oxide that includes Zn and Ga and further includes one element or two
A multilayer reflection electrode film includes a Ag film that is formed of Ag or an Ag alloy; and a transparent conductive oxide film that is disposed on the Ag film, in which the transparent conductive oxide film is formed of an oxide that includes Zn and Ga and further includes one element or two or more elements selected from the group consisting of Sn, Y, and Ti.
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1. A multilayer reflection electrode film comprising: a Ag film that is formed of Ag or an Ag alloy; anda transparent conductive oxide film that is disposed on the Ag film,wherein the transparent conductive oxide film is formed of an oxide that includes Zn and Ga and further includes one element or
1. A multilayer reflection electrode film comprising: a Ag film that is formed of Ag or an Ag alloy; anda transparent conductive oxide film that is disposed on the Ag film,wherein the transparent conductive oxide film is formed of an oxide that includes Zn and Ga and further includes one element or two or more elements selected from the group consisting of Sn, Y, and Ti. 2. The multilayer reflection electrode film according to claim 1, wherein atomic proportions with respect to all the metal elements included in the transparent conductive oxide film are Ga: 0.5 at % to 30.0 at %, each of Sn, Y, and Ti: 0.1 at % to 10.0 at %, and a balance of Zn. 3. The multilayer reflection electrode film according to claim 2, wherein atomic proportions with respect to all the metal elements included in the transparent conductive oxide film are Ga: 0.5 at % to 18.0 at %, each of Sn, Y, and Ti: 0.1 at % to 10.0 at %, and a balance of Zn. 4. The multilayer reflection electrode film according to claim 3, wherein atomic proportions with respect to all the metal elements included in the transparent conductive oxide film are Ga: 0.5 at % to 14.0 at %, each of Sn, Y, and Ti: 0.1 at % to 10.0 at %, and a balance of Zn. 5. The multilayer reflection electrode film according to claim 1, wherein the transparent conductive oxide film further includes Y. 6. The multilayer reflection electrode film according to claim 1, wherein the Ag film is formed of an Ag alloy including 0.2 at % to 2.0 at % of one element or two or more elements in total selected from the group consisting of Cu, In, Sn, Sb, Ti, Mg, Zn, Ge, Al, Ga, Pd, Au, Pt, Bi, Mn, Sc, Y, Nd, Sm, Eu, Gd, Tb, and Er and a balance of Ag and inevitable impurities. 7. The multilayer reflection electrode film according to claim 1, wherein a thickness of the Ag film is 50 nm or more, anda thickness of the transparent conductive oxide film is 100 nm or less. 8. A multilayer reflection electrode pattern that is formed of the multilayer reflection electrode film according to claim 1, the multilayer reflection electrode pattern comprising a predetermined pattern. 9. A method of forming the multilayer reflection electrode pattern according to claim 8, the method comprising: a multilayer reflection electrode film forming step of forming the multilayer reflection electrode film including the Ag film and the transparent conductive oxide film on a film forming surface of a base material;a resist film forming step of forming a resist film having a predetermined pattern shape on the multilayer reflection electrode film;an etching step of collectively etching the multilayer reflection electrode film on which the resist film is formed by using an acidic mixed solution including phosphoric acid and acetic acid as an etchant; anda resist film removing step of removing the resist film after etching. 10. A method of forming the multilayer reflection electrode pattern according to claim 8, the method comprising: a resist film forming step of forming a resist film having a reverse pattern shape of the predetermined pattern on a film forming surface of a base material;a multilayer reflection electrode film forming step of forming the multilayer reflection electrode film including the Ag film and the transparent conductive oxide film on the film forming surface of the base material on which the resist film is formed; anda resist film removing step of removing the resist film.
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