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An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devic

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

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1. An RF filter circuit device, the device comprising: an input port;a first node coupled to the input port;a first resonator coupled between the first node and the input port, the first resonator comprising a first capacitor device, the first capacitor device comprising a first substrate member, th

1. An RF filter circuit device, the device comprising: an input port;a first node coupled to the input port;a first resonator coupled between the first node and the input port, the first resonator comprising a first capacitor device, the first capacitor device comprising a first substrate member, the first substrate member having a first cavity region and a first upper surface region contiguous with a first opening of the first cavity region,a first bottom electrode within a portion of the first cavity region,a first piezoelectric material overlying the first upper surface region and the first bottom electrode,a first top electrode overlying the first piezoelectric material and overlying the first bottom electrode, anda first insulating material overlying the first top electrode and configured with a first thickness to tune the first resonator;a second node coupled to the first node;a second resonator coupled between the first node and the second node, the second resonator comprising a second capacitor device, the second capacitor device comprising a second substrate member, the second substrate member having a second cavity region and a second upper surface region contiguous with a second opening of the second cavity region,a second bottom electrode within a portion of the second cavity region,a second piezoelectric material overlying the second upper surface region and the second bottom electrode,a second top electrode overlying the second piezoelectric material and overlying the second bottom electrode, anda second insulating material overlying the second top electrode and configured with a second thickness to tune the second resonator;a third node coupled to the second node;a third resonator coupled between the second node and the third node, the third resonator comprising a third capacitor device, the third capacitor device comprising a third substrate member, the third substrate member having a third cavity region and a third upper surface region contiguous with a third opening of the third cavity region,a third bottom electrode within a portion of the third cavity region,a third piezoelectric material overlying the third upper surface region and the third bottom electrode,a third top electrode overlying the third piezoelectric material and overlying the third bottom electrode, anda third insulating material overlying the third top electrode and configured with a third thickness to tune the third resonator;a fourth node coupled to the third node;a fourth resonator coupled between the third node and the fourth node, the fourth resonator comprising a fourth capacitor device, the fourth capacitor device comprising a fourth substrate member, the fourth substrate member having a fourth cavity region and a fourth upper surface region contiguous with a fourth opening of the fourth cavity region,a fourth bottom electrode within a portion of the fourth cavity region,a fourth piezoelectric material overlying the fourth upper surface region and the fourth bottom electrode,a fourth top electrode overlying the fourth piezoelectric material and overlying the fourth bottom electrode, anda fourth insulating material overlying the fourth top electrode and configured with a fourth thickness to tune the fourth resonator;an output port coupled to the fourth node;a serial configuration comprising the input port, the first node, the first resonator, the second node, the second resonator, the third node, the third resonator, the fourth resonator, the fourth node, and the output port;a first shunt configuration resonator coupled to the first node;a second shunt configuration resonator coupled to the second node;a third shunt configuration resonator coupled to the third node; anda fourth shunt configuration resonator coupled to the fourth node;a parallel configuration comprising the first shunt configuration resonator, the second shunt configuration resonator, the third shunt configuration resonator, and the fourth shunt configuration resonator; anda circuit response between the input port and the output port and configured from the serial configuration and the parallel configuration to achieve a transmission loss from a pass band having a characteristic frequency centered around 2.595 GHz and having a bandwidth from 2.515 GHz to 2.675 GHz such that the characteristic frequency centered around 2.595 GHz is tuned from a lower frequency ranging from about 2.0 GHz to 2.5 GHz. 2. The device of claim 1 wherein the first piezoelectric material, the second piezoelectric material, the third piezoelectric material, and the fourth piezoelectric are each essentially single crystal aluminum nitride (AlN) bearing material or aluminum scandium nitride (AlScN) bearing material. 3. The device of claim 1 wherein the first piezoelectric material, the second piezoelectric material, the third piezoelectric material, and the fourth piezoelectric material are each comprise a polycrystalline aluminum nitride (AlN) bearing material or aluminum scandium nitride (AlScN) bearing material. 4. The device of claim 1 wherein the first piezoelectric material, the second piezoelectric material, the third piezoelectric material, and the fourth piezoelectric material are each essentially single crystal gallium nitride (GaN) bearing material or gallium aluminum nitride (GaAlN) bearing material. 5. The device of claim 1 wherein the first piezoelectric material, the second piezoelectric material, the third piezoelectric material, and the fourth piezoelectric material are each comprise a polycrystalline gallium nitride (GaN) bearing material or gallium aluminum nitride (GaAlN) bearing material. 6. The device of claim 1 wherein the serial configuration forms a resonance profile and an anti-resonance profile; and the parallel configuration forms a resonance profile and an anti-resonance profile such that the resonance profile from the serial configuration is off-set with the anti-resonance profile of the parallel configuration to form the pass-band. 7. The device of claim 1 wherein the pass band is characterized by a band edge on each side of the pass-band having an amplitude difference ranging from 10 dB to 60 dB. 8. The device of claim 1 wherein each of the first insulating material, the second insulating material, the third insulating material, and the fourth insulating material comprises a silicon nitride bearing material or an oxide bearing material configured with a silicon nitride material or an oxide bearing material. 9. The device of claim 1 wherein the pass-band has a pair of band edges, each of the band edges having a transition region from the pass-band to a stop band such that the transition region is no greater than 250 MHz. 10. The device of claim 1 wherein the pass-band has a pair of band edges, each of the band edges having a transition region from the pass band to a stop band such that the transition region ranges from 5 MHz to 250 MHz. 11. The device of claim 1 further comprising a stop band rejecting signals below 2.515 GHz and above 2.675 GHz. 12. The device of claim 1 further comprising an insertion loss of less than 2.5 dB. 13. The device of claim 1 further comprising an amplitude variation characterizing the pass-band of less than 1.5 dB. 14. The device of claim 1 further comprising a minimum attenuation of 45 dB for a frequency range of 0 MHz to 700 MHz;a minimum attenuation of 35 dB for a frequency range of 700 MHz to 1000 MHz;a minimum attenuation of 25 dB for a frequency range of 1000 MHz to 1700 MHz;a minimum attenuation of 35 dB for a frequency range of 1700 MHz to 2400 MHz;a minimum attenuation of 40 dB for a frequency range of 2400 MHz to 2472 MHz;a minimum attenuation of 6 dB for a frequency range of 2483 MHz to 2500 MHz;a minimum attenuation of 6 dB for a frequency range of 2690 MHz to 2700 MHz;a minimum attenuation of 25 dB for a frequency range of 2750 MHz to 3300 MHz;a minimum attenuation of 30 dB for a frequency range of 3300 MHz to 4200 MHz;a minimum attenuation of 30 dB for a frequency range of 4200 MHz to 6000 MHz; anda minimum attenuation of 25 dB for a frequency range of 6000 MHz to 10000 MHz. 15. The device of claim 1 further comprising a minimum return loss characterizing the pass-band 10 dB. 16. The device of claim 1 wherein the device is operable from −40 Degrees Celsius to 85 Degrees Celsius. 17. The device of claim 1 further comprising a microwave characteristic impedance of 50 Ohms. 18. The device of claim 1 further comprising a minimum power handling capability within the pass-band of +27 dBm or 0.5 Watt. 19. The device of claim 1 wherein the pass band is configured for 5G applications. 20. The device of claim 1 is configured as a bulk acoustic wave filter device. 21. The device of claim 1 wherein each of the first resonator, the second resonator, the third resonator, and the fourth resonator is a bulk acoustic wave resonator. 22. The device of claim 1 wherein each of the first shunt resonator, the second shunt resonator, the third shunt resonator, and the fourth shunt resonator is a bulk acoustic wave resonator. 23. The device of claim 1 further comprising one or more additional resonator devices numbered from N to M, where N is four and M is twenty. 24. The device of claim 1 further comprising one or more additional shunt resonator devices numbered from N to M, where N is four and M is twenty. 25. An RF circuit device comprising: a differential input port;a top serial configuration comprising a first top node, a second top node, and a third top node;a first top resonator coupled between the first top node and the second top node;a second top resonator coupled between the second top node and the third top node;a bottom serial configuration comprising a first bottom node, a second bottom node, and a third bottom node;a first bottom resonator coupled between the first bottom node and the second bottom node;a second bottom resonator coupled between the second bottom node and the third bottom node;a first lattice configuration comprising: a first shunt resonator cross-coupled with a second shunt resonator and coupled between the first top resonator of the top serial configuration and the first bottom resonator of the bottom serial configuration;a second lattice configuration comprising: a first shunt resonator cross-coupled with a second shunt resonator and coupled between the second top resonator of the top serial configuration and the second bottom resonator of the bottom serial configuration;a differential output port; anda circuit response between the input port and the output port and configured from the serial configuration and the parallel configuration to achieve a transmission loss from a pass band having a characteristic frequency centered around 2.595 GHz and having a bandwidth from 2.515 GHz to 2.675 GHz such that the characteristic frequency centered around 2.595 GHz is tuned from a lower frequency ranging from about 2.0 GHz to 2.5 GHz;wherein the top serial configuration and the bottom serial configuration are each coupled to both the differential input port and the differential output port. 26. The device of claim 25 further comprising a first balun coupled to the differential input port and a second balun coupled to the differential output port. 27. The device of claim 25 further comprising an inductor device coupled between the differential input port and the differential output port. 28. The device of claim 25 further comprising a first inductor device coupled between the first top node of the top serial configuration and the first bottom node of the bottom serial configuration; a second inductor device coupled between the second top node of the top serial configuration and the second bottom node of the bottom serial configuration; and a third inductor device coupled between the third top node of the top serial configuration and the third bottom node of the bottom serial configuration.