IPC분류정보
국가/구분 |
United States(US) Patent
공개
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국제특허분류(IPC7판) |
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출원번호 |
16691537
(2019-11-21)
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공개번호 |
20200090585
(2020-03-19)
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우선권정보 |
CN-201710693609.5 (2017-08-14) |
발명자
/ 주소 |
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출원인 / 주소 |
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인용정보 |
피인용 횟수 :
0 인용 특허 :
0 |
초록
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An OLED external compensation circuit of a depletion type TFT includes a first thin film transistor, a second thin film transistor, a capacitor, an organic light emitting diode, and a compensation circuit. The second thin film transistor is of a depletion type. The compensation circuit is connected
An OLED external compensation circuit of a depletion type TFT includes a first thin film transistor, a second thin film transistor, a capacitor, an organic light emitting diode, and a compensation circuit. The second thin film transistor is of a depletion type. The compensation circuit is connected with a first node and a second node. A reset signal is inputted into the compensation circuit. The OLED external compensation circuit is suitable for a depletion type TFT in view of the complicated characteristics of the conventional designs of the depletion type TFT and the OLED external compensation. Other examples of the OLED external compensation circuit of another depletion type TFT are also provided and help reduce the cost of the system chip, thereby achieving cost reduction. The OLED external compensation circuit is compatible with an enhanced TFT circuit of which Vth is positive.
대표청구항
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1. An OLED external compensation circuit of a depletion type TFT, comprising a first thin film transistor, a second thin film transistor, a capacitor, an organic light emitting diode, and a compensation circuit, wherein the second thin film transistor is of a depletion type;a gate electrode of the f
1. An OLED external compensation circuit of a depletion type TFT, comprising a first thin film transistor, a second thin film transistor, a capacitor, an organic light emitting diode, and a compensation circuit, wherein the second thin film transistor is of a depletion type;a gate electrode of the first thin film transistor is inputted with a gate line signal and a source electrode and a drain electrode of the first thin film transistor are respectively inputted with a data signal and connected with a first node;a gate of the second thin film transistor is connected with the first node and a source electrode and a drain electrode of the second thin film transistor are respectively inputted with a DC high voltage power supply and connected with a second node;two ends of the capacitor are respectively connected with the first node and the second node; anda positive electrode of the organic light emitting diode is connected with the second node and a negative electrode of the organic light emitting diode is grounded;wherein the compensation circuit is connected with the first node and the second node, an AC reset signal being inputted to the compensation circuit, wherein the AC reset signal is turned on at a blanking time of each frame when an OLED display device displays an image and is turned off when normally operated on each frame and wherein when the AC reset signal is turned on, the compensation circuit changes voltages of the first node and the second node; andwherein the compensation circuit comprises a third thin film transistor that has a gate electrode that is inputted with the AC reset signal and a source electrode and a drain electrode that are respectively inputted with a DC reference potential and connected with the first node; and an additional thin film transistor that has a gate electrode that is inputted with the AC reset signal and a source electrode and a drain electrode that are respectively inputted with the DC reference potential and connected with the second node. 2. The OLED external compensation circuit of a depletion type TFT according to claim 1, wherein during operation: in the first stage, the AC reset signal is at a high potential at which time the third thin film transistor and the additional thin film transistor are turned on and a signal of the DC reference potential is written to the first node and the second node;in the second stage, the gate line signal and the AC reset signal are at a low potential, the first thin film transistor, the third thin film transistor, and the additional thin film transistor are turned off and the second thin film transistor is still turned on;in the third stage, when the gate line signal is at a high potential, the first thin film transistor is turned on and the data signal is written to the first node. 3. An OLED external compensation circuit of a depletion type TFT, comprising a first thin film transistor, a second thin film transistor, a capacitor, an organic light emitting diode, and a compensation circuit, wherein the second thin film transistor is of a depletion type;a gate electrode of the first thin film transistor is inputted with a gate line signal and a source electrode and a drain electrode of the first thin film transistor are respectively inputted with a data signal and connected with a first node;a gate of the second thin film transistor is connected with the first node and a source electrode and a drain electrode of the second thin film transistor are respectively inputted with a DC high voltage power supply and connected with a second node;two ends of the capacitor are respectively connected with the first node and the second node; anda positive electrode of the organic light emitting diode is connected with the second node and a negative electrode of the organic light emitting diode is grounded;wherein the compensation circuit is connected with the first node and the second node, and an AC reference potential being inputted to the compensation circuit, wherein the AC reference potential is turned on at a blanking time of each frame when an OLED display device displays an image and is turned off when normally operated on each frame and wherein when the AC reference potential is turned on, the compensation circuit changes voltages of the first node and the second node; andwherein the compensation circuit comprises a third thin film transistor and a fourth thin film transistor, wherein the third thin film transistor has a gate electrode that is inputted with the AC reference potential and a source electrode and a drain electrode that are respectively connected with one of a drain electrode and a source electrode of the fourth thin film transistor and the first node; and the fourth thin film transistor has a gate electrode that is inputted with the AC reference potential, the other one of the source electrode and the drain electrode of the fourth thin film transistor being also inputted with the AC reference potential, the compensation circuit further comprising a first additional thin film transistor and a second additional thin film transistor, wherein the first additional thin film transistor has a gate electrode that is inputted with the AC reference potential and a source electrode and a drain electrode that are respectively connected with one of a drain electrode and a source electrode of the second additional thin film transistor and the second node; and the second additional thin film transistor has a gate electrode that is inputted with the AC reference potential, the other one of the source electrode and the drain electrode of the second additional thin film transistor being also inputted with the AC reference potential. 4. The OLED external compensation circuit of a depletion type TFT according to claim 3, wherein during operation: in the first stage, the AC reference potential is at a high potential at which time the third thin film transistor, the fourth thin film transistor, the first additional thin film transistor, and the second additional thin film transistor are turned on and a signal of the AC reference potential is written to the first node and the second node;in the second stage, the gate line signal and the AC reference potential are at a low potential, the first thin film transistor, the third thin film transistor, the fourth thin film transistor, the first additional thin film transistor, and the second additional thin film transistor are turned off and the second thin film transistor is still turned on;in the third stage, when the gate line signal is at a high potential, the first thin film transistor is turned on and the data signal is written to the first node.
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