WAFER BACKSIDE CLEANING APPARATUS AND METHOD OF CLEANING WAFER BACKSIDE
원문보기
IPC분류정보
국가/구분
United States(US) Patent
공개
국제특허분류(IPC7판)
B24D-011/00
B24B-007/22
출원번호
16691061
(2019-11-21)
공개번호
20200171623
(2020-06-04)
발명자
/ 주소
Yang, Ching-Hai
Kao, Yao-Hwan
Liu, Huang-Sheng
출원인 / 주소
Yang, Ching-Hai
인용정보
피인용 횟수 :
0인용 특허 :
0
초록▼
A wafer cleaning and polishing pad includes a pad having a polishing surface, wherein the polishing surface includes a first material having a Shore D hardness ranging from 50 to 80 and a static coefficient of friction ranging from 0.01 to 0.6. The first material is a fluoropolymer. The pad includes
A wafer cleaning and polishing pad includes a pad having a polishing surface, wherein the polishing surface includes a first material having a Shore D hardness ranging from 50 to 80 and a static coefficient of friction ranging from 0.01 to 0.6. The first material is a fluoropolymer. The pad includes a middle layer and/or a base under the polishing surface. The base includes a second material and the middle layer includes a third material having a lower surface hardness and a higher coefficient of friction than the first material. The polishing surface includes a plurality of grooves with varying groove depth from center of the pad to an edge of the pad.
대표청구항▼
1. A wafer cleaning and polishing pad, comprising: a pad having a polishing surface,wherein the polishing surface comprises a first material having a Shore D hardness ranging from 50 to 80 and a static coefficient of friction ranging from 0.01 to 0.6. 2. The wafer cleaning and polishing pad of claim
1. A wafer cleaning and polishing pad, comprising: a pad having a polishing surface,wherein the polishing surface comprises a first material having a Shore D hardness ranging from 50 to 80 and a static coefficient of friction ranging from 0.01 to 0.6. 2. The wafer cleaning and polishing pad of claim 1, wherein the polishing surface includes a plurality of grooves with a varying groove depth from center of the pad to an edge of the pad. 3. The wafer cleaning and polishing pad of claim 2, wherein the first material is a fluoropolymer selected from the group consisting of a polyvinylfluoride, polyvinylidene fluoride, polyethylenedifluoride, polytetrafluoroethylene, perfluoroalkoxy polymer, fluorinated ethylene-propylene copolymer, polyethylenetetrafluoroethylene, polyethylenechlorotrifluoroethylene, and a mixture thereof. 4. The wafer cleaning and polishing pad of claim 1, further comprising at least one of a middle layer and a base, wherein the base comprises a second material, andwherein the middle layer comprises a third material having a lower surface hardness and a higher coefficient of friction than the first material. 5. The wafer cleaning and polishing pad of claim 4, wherein the second material or the third material has a static coefficient of friction ranging from 0.4 to 1.5. 6. The wafer cleaning and polishing pad of claim 4, wherein the second material is a polyvinyl chloride and the third material is a polyvinyl alcohol or a polyurethane. 7. The wafer cleaning and polishing pad of claim 1, wherein a bending of the polishing surface increases from center of the pad to an edge of the pad or the pad is configured to uniformly apply pressure across a surface of a wafer during cleaning and polishing. 8. The wafer cleaning and polishing pad of claim 7, wherein the bending of the polishing surface increases from 1 mm to 3 mm from the center of the pad to the edge of the pad to accommodate the applied pressure. 9. A wafer cleaning and polishing chamber, comprising: a cleaning and polishing solution supply;a wafer support;a motor configured to spin the wafer support;a polishing arm; anda wafer cleaning and polishing pad fixed to the polishing arm, wherein the wafer cleaning and polishing pad includes a pad having a polishing surface, and wherein the polishing surface comprises a first material having a Shore D hardness ranging from 50 to 80 and a static coefficient of friction ranging from 0.01 to 0.6. 10. The wafer cleaning and polishing chamber according to claim 9, wherein the polishing surface comprises a fluoropolymer selected from the group consisting of a polyvinylfluoride, polyvinylidene fluoride, polyethylenedifluoride, polytetrafluoroethylene, perfluoroalkoxy polymer, fluorinated ethylene-propylene copolymer, polyethylenetetrafluoroethylene, polyethylenechlorotrifluoroethylene, and a mixture thereof. 11. The wafer cleaning and polishing chamber of claim 9, wherein the pad further comprises at least one of a middle layer or a base, wherein the base comprises a second material, andwherein the middle layer comprises a third material having a lower surface hardness and a higher coefficient of friction than the first material. 12. The wafer cleaning and polishing chamber of claim 9, wherein the second material is a polyvinyl chloride or the third material is a polyvinyl alcohol or a polyurethane, and has a static coefficient of friction ranging from 0.4 to 1.5. 13. The wafer cleaning and polishing chamber of claim 9, wherein a bending of the polishing surface increases from 1 mm to 3 mm from center of the pad to an edge of the pad or the pad is configured to uniformly apply pressure across a surface of a wafer during cleaning and polishing. 14. A method of cleaning and polishing a wafer, comprising: providing a first wafer surface;providing a pad having a polishing surface, wherein the polishing surface comprises a material having a Shore D hardness ranging from 50 to 80 and a static coefficient of friction ranging from 0.01 to 0.6; andcontacting the first wafer surface with the polishing surface of the pad. 15. The method according to claim 14, wherein the contacting the first wafer surface includes rotating the wafer or the pad with respect to each other so as to clean or polish the first wafer surface. 16. The method according to claim 14, wherein the first wafer surface is a backside surface of the wafer having a photoresist coating on an opposite surface of the wafer. 17. The method according to claim 14, further comprising: supplying a liquid to the first wafer surface during the contacting, wherein the liquid comprises deionized water, isopropanol, acetone, and mixtures thereof. 18. The method according to claim 14, wherein the polishing surface comprises a fluoropolymer selected from the group consisting of a polyvinylfluoride, polyvinylidene fluoride, polyethylenedifluoride, polytetrafluoroethylene, perfluoroalkoxy polymer, fluorinated ethylene-propylene copolymer, polyethylenetetrafluoroethylene, polyethylenechlorotrifluoroethylene, and a mixture thereof. 19. The method according to claim 14, wherein the pad comprises at least one of a middle layer or a base, wherein the base comprises a second material, andwherein the middle layer comprises a third material having a lower surface hardness and a higher coefficient of friction than the first material. 20. The method according to claim 19, wherein the second material is a polyvinyl chloride and the third material is a polyvinyl alcohol or a polyurethane.
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