IPC분류정보
국가/구분 |
United States(US) Patent
공개
|
국제특허분류(IPC7판) |
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출원번호 |
17100072
(2020-11-20)
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공개번호 |
20210269674
(2021-09-02)
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발명자
/ 주소 |
|
출원인 / 주소 |
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인용정보 |
피인용 횟수 :
0 인용 특허 :
0 |
초록
▼
Provided herein are CMP compositions, and methods for polishing surfaces comprising amorphous carbon, spin-on carbon (SoC), and/or diamond like carbon (DLC) films. The CMP compositions of the present disclosure contain at least one abrasive having zirconia particles and may also contain at least one
Provided herein are CMP compositions, and methods for polishing surfaces comprising amorphous carbon, spin-on carbon (SoC), and/or diamond like carbon (DLC) films. The CMP compositions of the present disclosure contain at least one abrasive having zirconia particles and may also contain at least one metal-containing oxidizer.
대표청구항
▼
1. A method of increasing the removal rate of amorphous carbon, spin-on carbon (SoC), or diamond like carbon (DLC) from a surface, comprising contacting the surface with a slurry comprising an abrasive having zirconia particles and a metal-containing oxidizer, and polishing the surface. 2. The metho
1. A method of increasing the removal rate of amorphous carbon, spin-on carbon (SoC), or diamond like carbon (DLC) from a surface, comprising contacting the surface with a slurry comprising an abrasive having zirconia particles and a metal-containing oxidizer, and polishing the surface. 2. The method of claim 1, wherein the removal rate is increased when compared to a removal rate using a similar slurry composition having silica and/or a non-metal-containing oxidizer in place of zirconia particles and/or the metal-containing oxidizer. 3. The method of claim 1, wherein the zirconia particle is an aggregate comprising primary particles. 4. The method of claim 3, wherein the zirconia particle comprises a primary particle size with a diameter of about 8-10 nm and a secondary size of the aggregates with a diameter of about 70 nm. 5. The method of claim 1, the metal-containing oxidizer comprises an element selected from the group consisting of manganese, cerium, vanadium, and iron. 6. The method of claim 1, wherein the metal-containing oxidizer is selected from the group consisting of KMnO4, (NH4)2Ce(NO3)6, NaVO3, NH4VO3, and Fe(NO3)3. 7. The method of claim 1, wherein the composition has a pH of about 3 to about 6. 8. The method of claim 1, wherein the zirconia particles are present in an amount of about 0.01 wt. % or more. 9. The method of claim 1, wherein the zirconia particles are present in an amount of about 2.5 wt. % of less. 10. The method of claim 1, wherein the metal-containing oxidizer is present in an amount of about 0.05 mM or more. 11. The method of claim 1, wherein the zirconia particles comprise colloidal zirconia. 12. The method of claim 1, wherein the zirconia particles comprise calcined zirconia. 13. The method of claim 1, wherein the zirconia particles are doped with yttrium. 14. The method of claim 13, zirconia particle is doped with greater than 9 mol % Y2O3. 15. A chemical mechanical polishing (CMP) composition comprising colloidal zirconia particles and a metal-containing oxidizer. 16. The CMP composition of claim 15, wherein the colloidal zirconia particle is an aggregate comprising primary particles. 17. The CMP composition of claim 16, wherein the colloidal zirconia particle comprises a primary particle size with a diameter of about 8 to about 10 nm and a secondary size of the aggregates with a diameter of about 70 nm. 18. The CMP composition of claim 15, wherein the metal-containing oxidizer comprises an element selected from the group consisting of manganese, cerium, vanadium, and iron. 19. The CMP composition of claim 15, wherein the metal-containing oxidizer is selected from the group consisting of KMnO4, (NH4)2Ce(NO3)6, NaVO3, NH4VO3, and Fe(NO3)3. 20. The CMP composition of claim 15, wherein the composition has a pH of about 3 to about 6. 21. The CMP composition of claim 15, wherein the zirconia particles are present in an amount of about 0.01 wt. % or more. 22. A reaction product formed by contacting the CMP composition of claim 15 with an amorphous carbon, spin-on carbon (SoC), or DLC surface. 23. A chemical mechanical polishing (CMP) composition comprising zirconia particles doped with yttrium and a metal-containing oxidizer, wherein the particle size of the particles is less than 80 nm. 24. The CMP composition of claim 23, wherein the zirconia particles are doped with greater than 9 mol % Y2O3.
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