CHARACTERIZATION OF PATTERNED STRUCTURES USING ACOUSTIC METROLOGY
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IPC분류정보
국가/구분
United States(US) Patent
공개
국제특허분류(IPC7판)
G01N-029/24
G01N-029/06
출원번호
17217527
(2021-03-30)
공개번호
20210318270
(2021-10-14)
발명자
/ 주소
Mehendale, Manjusha
Kotelyanskii, Michael
Mukundhan, Priya
Mair, Robin
출원인 / 주소
Onto Innovation Inc.
인용정보
피인용 횟수 :
0인용 특허 :
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초록▼
Systems and methods for inspecting or characterizing samples, such as by characterizing patterned features or structures of the sample. In an aspect, the technology relates to a method for characterizing a patterned structure of a sample. The method includes directing a pump beam to a first position
Systems and methods for inspecting or characterizing samples, such as by characterizing patterned features or structures of the sample. In an aspect, the technology relates to a method for characterizing a patterned structure of a sample. The method includes directing a pump beam to a first position on a surface of the sample to induce a surface acoustic wave in the sample and directing a probe beam to a second position on the sample, wherein the probe beam is affected by the surface acoustic wave when the probe beam reflects from the surface of the sample. The method also includes detecting the reflected probe beam, analyzing the detected reflected probe beam to identify a frequency mode in the reflected probe beam, and based on the identified frequency mode, determining at least one of a width or a pitch of a patterned feature in the sample.
대표청구항▼
1. A method for characterizing a patterned structure of a sample, the method comprising: directing a pump beam to a first position on a surface of the sample to induce a surface acoustic wave in the sample;directing a probe beam to a second position on the sample, wherein the probe beam is affected
1. A method for characterizing a patterned structure of a sample, the method comprising: directing a pump beam to a first position on a surface of the sample to induce a surface acoustic wave in the sample;directing a probe beam to a second position on the sample, wherein the probe beam is affected by the surface acoustic wave when the probe beam reflects from the surface of the sample;detecting the reflected probe beam;analyzing the detected reflected probe beam to identify a frequency mode in the reflected probe beam; andbased on the identified frequency mode, determining at least one of a width or a pitch of a patterned feature in the sample. 2. The method of claim 1, wherein the frequency mode is between 1 GHz and 50 GHz. 3. The method of claim 1, wherein the first position and second position are the same. 4. The method of claim 1, wherein the first position is separated from the second position by at least 10 μm. 5. The method of claim 1, wherein the patterned feature is a metal line. 6. The method of claim 1, wherein the patterned feature is embedded under the surface of the sample. 7. The method of claim 1, wherein the width of the patterned feature is less than 200 nm. 8. The method of claim 1, further comprising performing additional manufacturing steps on the sample. 9. A method for characterizing a sample, the method comprising: directing a pump beam to a first position on a surface of the sample to induce a first surface acoustic wave in the sample;directing a probe beam to a second position on the sample, wherein the probe beam is affected by the first surface acoustic wave when the probe beam reflects from the second position, wherein the first position is separated from the second position by a first distance;detecting the probe beam reflected from the second position;directing the pump beam to a third position on the surface of the sample to induce a second surface acoustic wave;directing the probe beam to a fourth position on the surface of the sample, wherein the probe beam is affected by the second surface acoustic wave when the probe beam reflects from the fourth position, wherein the third position is separated from the fourth position by a second distance;detecting the probe beam reflected from the fourth position; andbased on the detected probe beam reflected from the first position and the detected probe beam reflected from the fourth position, determining at least one characteristic of the sample. 10. The method of claim 9, wherein the at least one characteristic is a characteristic of a patterned feature embedded below the surface of the sample. 11. The method of claim 9, wherein the at least one characteristic is a characteristic of a patterned feature. 12. The method of claim 9, further comprising determining a frequency mode at least one of the detected probe beam reflected from the second position or the detected probe beam reflected from the fourth position. 13. The method of claim 12, wherein determining the at least one characteristic is further based on the determined frequency mode. 14. The method of claim 12, further comprising determining a delay until the frequency mode the frequency mode is present. 15. The method of claim 14, wherein determining the at least one characteristic is further based on the determined delay. 16. The method of claim 9, where first distance is less than 10 μm and the second distance is at least 15 μm. 17. The method of claim 9, further comprising performing additional manufacturing steps on the sample. 18. A system for characterizing a patterned structure in a sample, the system comprising: at least one light source for generating a pump beam and a probe beam;optical components configured to direct the pump beam to a first position on the sample and direct the pump beam to a second position on the sample;a detector configured to detect the probe beam after reflecting from the second position;a processor; andmemory storing instructions that when executed by the processor cause the processor to perform a set of operations comprising: identifying a frequency mode in the detected probe beam; andbased on the identified frequency mode, determining at least one of a width or a pitch of the patterned structure. 19. The system of claim 18, wherein the patterned structure is embedded under the surface of the sample. 20. The system of claim 18, wherein the first position is separated from the second position by at least 10 μm.
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