초록 ▼

An on-cell touch display and a preparing method thereof are provided. The on-cell touch display includes a display panel and a touch sensor disposed on the display panel. The touch sensor includes a first conductive thin film, which is formed on the display panel; an insulating layer, which is forme

An on-cell touch display and a preparing method thereof are provided. The on-cell touch display includes a display panel and a touch sensor disposed on the display panel. The touch sensor includes a first conductive thin film, which is formed on the display panel; an insulating layer, which is formed on the first conductive thin film; a second conductive thin film, which is formed on the insulating layer; and a protective film, which is formed on the second conductive thin film; wherein the non-uniformity value of the first conductive thin film and the second conductive thin film is less than 15% respectively.

대표청구항 ▼

1. An on-cell touch display, comprising: a display panel; anda touch sensor being disposed on the display panel, comprising: a first conductive thin film disposed on the display panel;an insulating layer disposed on the first conductive thin film;a second conductive thin film disposed on the insulat

1. An on-cell touch display, comprising: a display panel; anda touch sensor being disposed on the display panel, comprising: a first conductive thin film disposed on the display panel;an insulating layer disposed on the first conductive thin film;a second conductive thin film disposed on the insulating layer; anda protective film disposed on the second conductive thin film,wherein a non-uniformity value of the first conductive thin film and a non-uniformity value of the second conductive thin film are less than 15% respectively. 2. The on-cell touch display of claim 1, wherein the first conductive thin film and the second conductive thin film are made of silver nanowires. 3. The on-cell touch display of claim 2, wherein a surface resistance value of the first conductive thin film and a surface resistance value of the second conductive thin film are 50-100 ohm/sq respectively. 4. The on-cell touch display of claim 1, wherein the display panel is selected from the group consisting of a free plasma display panel (PDP), a liquid crystal display panel (LCD), a thin film transistor liquid crystal display panel (TFT-LCD), an organic light-emitting diode display panel (OLED), a light-emitting diode display panel (LED), an electricity electroluminescent display panel (ELD), a surface conduction electron emission display panel (SED), and a field emission display panel (FED). 5. The on-cell touch display of claim 1, wherein the display panel is an organic light-emitting diode display panel. 6. A preparing method of an on-cell touch display, comprising steps of: (A) providing a display panel;(B) forming a first conductive material layer on the display panel;(C) patterning the first conductive material layer to form a first conductive thin film;(D) coating an insulating material on the first conductive thin film and patterning the insulating material to form an insulating layer;(E) forming a second conductive material layer on the insulating layer;(F) patterning the second conductive material layer to form a second conductive thin film; and(G) forming a protective film on the second conductive thin film for accomplishing the on-cell touch display,wherein a process temperature of step (B) and step (G) is lower than 100° C. and a non-uniformity value of the first conductive thin film and a non-uniformity value of the second conductive thin film are less than 15% respectively. 7. The preparing method of claim 6, wherein a surface resistance value of the first conductive material layer in step (B) and a surface resistance value of the second conductive material layer in step (E) are 50-100 ohm/sq respectively. 8. The preparing method of claim 6, wherein the first conductive material layer in step (B) and the second conductive material layer in step (E) are made of silver nanowires. 9. The preparing method of claim 8, wherein step (B) comprises steps of: (B-1) forming a silver nanowire layer comprising the silver nanowires on the display panel; and(B-2) performing a low-temperature baking process, wherein a baking temperature of the low-temperature baking process is lower than 100° C. and a baking time of the low-temperature baking process is more than 5 minutes to form the first conductive material layer. 10. The preparing method of claim 9, wherein step (B) further comprises, between step (B-1) and step (B-2), a step of: (B-1′) forming a hard-coating layer on the silver nanowire layer. 11. The preparing method of claim 8, wherein step (E) comprises steps of: (E-1) forming a silver nanowire layer comprising the silver nanowires on the insulating layer; and(E-2) performing a low-temperature baking process, wherein a baking temperature of the low-temperature baking process is lower than 100° C. and a baking time of the low-temperature baking process is more than 5 minutes to form the second conductive material layer. 12. The preparing method of claim 11, wherein step (E) further comprises, between step (E-1) and step (E-2), a step of: (E-1′) forming a hard-coating layer on the silver nanowire layer. 13. The preparing method of claim 6, wherein the display panel in step (A) is selected from a group consisting of a free plasma display panel (PDP), a liquid crystal display panel (LCD), a thin film transistor liquid crystal display panel (TFT-LCD), an organic light-emitting diode display panel (OLED), a light-emitting diode display panel (LED), an electricity electroluminescent display panel (ELD), a surface conduction electron emission display panel (SED), and a field emission display panel (FED). 14. The preparing method of claim 6, wherein the display panel in step (A) is an organic light-emitting diode display panel.