UNIFORMITY CONTROL FOR PLASMA PROCESSING USING WALL RECOMBINATION
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IPC분류정보
국가/구분
United States(US) Patent
공개
국제특허분류(IPC7판)
H01J-037/32
H01L-021/66
G06N-003/08
출원번호
17566584
(2021-12-30)
공개번호
20230215702
(2023-07-06)
발명자
/ 주소
Nagorny, Vladimir
George, Rene
Liu, Wei
출원인 / 주소
Nagorny, Vladimir
인용정보
피인용 횟수 :
0인용 특허 :
0
초록▼
A system, method, and apparatus for processing substrates. A plasma processing system includes a processing chamber having a chamber body having walls with a first material enclosing an interior volume. The plasma processing system further includes a plasma source designed to expose a substrate disp
A system, method, and apparatus for processing substrates. A plasma processing system includes a processing chamber having a chamber body having walls with a first material enclosing an interior volume. The plasma processing system further includes a plasma source designed to expose a substrate disposed within the processing chamber to plasma related fluxes. The first material has a first set of recombination coefficients associated with the plasma related fluxes. The plasma processing system further includes a second material disposed along a first region of the chamber body, the first material having a second set of plasma recombination coefficients associated with the plasma related fluxes. The second set of plasma recombination coefficients is different that the first set of plasma recombination coefficients.
대표청구항▼
1. A plasma processing system, comprising: a processing chamber comprising a chamber body having walls with a first material enclosing an interior volume;a plasma source configured to expose a substrate disposed within the processing chamber to plasma related fluxes, wherein the first material has a
1. A plasma processing system, comprising: a processing chamber comprising a chamber body having walls with a first material enclosing an interior volume;a plasma source configured to expose a substrate disposed within the processing chamber to plasma related fluxes, wherein the first material has a first set of recombination coefficients associated with the plasma related fluxes; anda second material disposed along a first region of the chamber body, the first material having a second set of plasma recombination coefficients associated with the plasma related fluxes, wherein the second set of plasma recombination coefficients is different from the first set of plasma recombination coefficients. 2. The plasma processing system of claim 1, further comprising: a third material disposed along a second region of the chamber body, the third material having a third set of plasma recombination coefficients associated with the plasma related fluxes, wherein the second set of plasma recombination coefficients are different from the first set of plasma recombination coefficients and the second set of plasma recombination coefficients. 3. The plasma processing system of claim 2, wherein: one or more of the plasma recombination coefficients of the second set are greater than corresponding plasma recombination coefficients of the first set; andone or more of the plasma recombination coefficients of the third set are less than corresponding plasma recombination coefficients of the first set. 4. The plasma processing system of claim 1, wherein: the chamber body further comprises a support structure to support the substrate; andthe second material is disposed along a surface of the support structure. 5. The plasma processing system of claim 1, wherein the second material is disposed along the first region in a plurality of concentric rings. 6. The plasma processing system of claim 1, wherein the wall comprises quartz and the first material comprises at least one of: a borosilicate based material, Titanium, or stainless steel. 7. The plasma processing system of claim 1, further comprising an actuator coupled to the second material, the actuator configured to vary a first distance between the second material and the chamber body. 8. The plasma processing system of claim 1, wherein at least one of the first set of plasma recombination coefficients or at least one of the second set of plasma recombination coefficients is associated with silicon nitridation occurring within the processing chamber. 9. The plasma processing system of claim 1, wherein: the processing chamber comprises an annular plasma injection site formed between a first radius and a second radius of a first surface of the chamber body, the annular plasma injection site is configured to deliver plasma from the plasma source to the interior volume of the processing chamber; andthe first material is disposed along the first surface of the chamber body within the first radius. 10. A method, comprising: obtaining a process result profile of a first substrate, the process result profile comprising a plurality of thickness values of the first substrate measured after processing the first substrate in a processing chamber having a chamber body with walls comprising a first material having a first set plasma recombination coefficients; anddetermining that the process result profile comprises a first thickness value for a first location on the first substrate that deviates from a first reference thickness value;responsive to determining that the process result profile comprises the first thickness value that deviates from the first reference thickness value, determining a second material having a second set plasma recombination coefficients different than the first set of plasma recombination coefficients and a second location along the chamber body proximate the first location on the first substrate; andprocessing a second substrate within the processing chamber with the second material disposed along the chamber body at the second location. 11. The method of claim 10, further comprising: determining that the process result profile comprises a second thickness value for a third location on the first substrate that deviates from a second reference thickness value; andresponsive to determining that the process result profile comprises the second thickness value that deviates from the second reference thickness value, determining a second material with a third set of plasma recombination coefficients different than the first set of plasma recombination coefficients and a fourth location along the chamber body proximate the third location, wherein the second substrate is processed with the second material disposed along the chamber body at the fourth location. 12. The method of claim 11, wherein: one or more of plasma recombination coefficients of the second set are greater than corresponding plasma recombination coefficients of the first set; andone or more of the plasma recombination coefficient of the third set are less than corresponding plasma recombination coefficient of the first set. 13. The method of claim 10, wherein the second material is disposed along the chamber body in a configuration having concentric rings. 14. The method of claim 10, further comprising: causing operation of an actuator to vary a first distance between the second material and the chamber body to position the second material in the second location. 15. The method of claim 10, further comprising: using the process result profile as input to a machine learning model; andobtaining one or more outputs of the machine learning model, the one or more outputs indicating the second material and the second location. 16. The method of claim 10, further comprising causing heating or cooling of the second material to change the second plasma recombination coefficient to a third plasma recombination coefficient. 17. A processing chamber apparatus, comprising: a chamber body having walls with a first material enclosing an interior volume, wherein the first material has a first set of plasma recombination coefficients;a second material disposed along a first region of the chamber body, the first material having a second set of plasma recombination coefficients that are different than the first set of plasma recombination coefficients; anda third material disposed along a second region of the chamber body, the third material having a third set of plasma recombination coefficients that are different than the first set of plasma recombination coefficients and the second set of plasma recombination coefficients. 18. The processing chamber apparatus of claim 17, wherein: one or more of the plasma recombination coefficient of the second set are greater than corresponding plasma recombination coefficient of the first set; andone or more of the plasma recombination coefficient of the third set are less than corresponding plasma recombination coefficient of the first set. 19. The processing chamber apparatus of claim 17, wherein: the chamber body further comprises a support structure to support a substrate; andthe second material is disposed along a surface of the support structure. 20. The processing chamber apparatus of claim 17, wherein at least one of the first set of plasma recombination coefficient or the second set of plasma recombination coefficients is associated with silicon nitridation occurring within the processing chamber apparatus.
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