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특허 상세정보

Dense polycrystalline silicon carbide

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) C04B-035/56    C04B-035/58   
미국특허분류(USC) 106/44
출원번호 US-0431611 (1974-01-08)
발명자 / 주소
  • Prochazka Svante (Ballston Lake NY)
출원인 / 주소
  • General Electric Company (Schenectady NY 02)
인용정보 피인용 횟수 : 61  인용 특허 : 0
초록

A dense silicon carbide material having improved electrically conducting properties is disclosed which is prepared by forming a homogeneous dispersion of silicon carbide, a sufficient amount of a boron containing additive, and 3.5-10.0% by weight of silicon nitride and hot pressing the dispersion at a sufficient temperature and pressure whereby a dense substantially nonporous ceramic is formed. The silicon carbide material can be machined by electrical discharge machining or by electrochemical machining.

대표
청구항

A dense hot pressed electrically conducting silicon carbide ceramic body consisting essentially of silicon carbide, a boron additive selected from the group consisting of boron and boron carbide wherein the amount of the boron additive is equivalent to 0.3-3.0% by weight of boron, and sufficient nitrogen atoms accommodated in the lattice of said silicon carbide making said body electrically conducting with a room temperature resistivity ranging up to about 50 ohm centimeters, said boron additive being in solid solution with the silicon carbide, said cera...

이 특허를 인용한 특허 (61)

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