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Semiconductor p-n junction solar cell and method of manufacture 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-027/14
출원번호 US-0653761 (1976-01-30)
발명자 / 주소
  • Gibbons James F. (320 Tennyson Ave. Palo Alto CA 94301)
인용정보 피인용 횟수 : 71  인용 특허 : 0

초록 ▼

There is described efficient semiconductor p-n junction solar cells which can be made from defect-rich semiconductor material. The solar cells include an extended electric field surrounding the p-n junction for extracting the photo-generated carriers in the presence of defects which would otherwise

대표청구항 ▼

A solar cell formed of semiconductor material, said cell including an active region where carriers are generated by solar energy which impinges onto and penetrates the cell, means of forming a collecting junction in said cell cooperating with said active region to collect carriers generated in the a

이 특허를 인용한 특허 (71)

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