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Silicon on sapphire MOS transistor 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-027/12
  • H01L-029/78
  • H01L-029/34
출원번호 US-0610493 (1975-09-04)
발명자 / 주소
  • Cricchi James R. (Catonsville MD) Fitzpatrick Michael D. (Glen Burnie MD)
출원인 / 주소
  • Westinghouse Electric Corporation (Pittsburgh PA 02)
인용정보 피인용 횟수 : 74  인용 특허 : 0

초록 ▼

An MOS transistor constructed using silicon on sapphire technology in which the channel region can be electrically connected either to the source or drain terminal is disclosed. The transistor is advantageous in that the shift of the threshold voltage of the transistor in the presence of radiation i

대표청구항 ▼

A planar transistor comprising a. a semiconductive structure including: 1. a channel region of a first conductivity type interposed between drain and source regions of a second conductivity type, 2. at least one high conductivity region of said first conductivity type contiguous to said source and c

이 특허를 인용한 특허 (74)

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  72. Stuber, Michael A.; Molin, Stuart B.; Drucker, Mark; Fowler, Peter, Thin integrated circuit chip-on-board assembly and method of making.
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