초록 ▼

A semiconductor device has a through-hole cut in the insulating layer beneath the bonding pad of the wiring layer having a bonding pad onto which a metal wiring is to be connected and this wiring layer is connected through the through-hole with the lower wiring layer so that the connection between t

A semiconductor device has a through-hole cut in the insulating layer beneath the bonding pad of the wiring layer having a bonding pad onto which a metal wiring is to be connected and this wiring layer is connected through the through-hole with the lower wiring layer so that the connection between the wiring layer having a bonding pad and the lower wiring layer rarely corrodes or becomes disconnected.

대표청구항 ▼

A semiconductor device having a multi-layer wiring structure, comprising: a. a first wiring layer formed on one main surface of a semiconductor substrate; b. a first insulating layer formed on said first wiring layer; c. a second wiring layer formed on said first insulating layer; d. metal leads bon

A semiconductor device having a multi-layer wiring structure, comprising: a. a first wiring layer formed on one main surface of a semiconductor substrate; b. a first insulating layer formed on said first wiring layer; c. a second wiring layer formed on said first insulating layer; d. metal leads bonded to predetermined portions of said second wiring layer; and e. a second insulating layer formed on the entire surface of said second wiring layer except said predetermined portions of said second wiring layer, said first wiring layer being electrically connected with said second wiring layer through first through-holes cut in those portions of said first insulating layer which are just beneath said predetermined portions of said second wiring layer.