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Solid state imaging device wherein a plurality of picture elements each comprising a MOSFET and a photodiode connected to a source electrode of the MOSFET are arranged in rows and columns. The gate electrodes of the MOSFET in each row are connected in common, the drain electrodes in odd numbered row

Solid state imaging device wherein a plurality of picture elements each comprising a MOSFET and a photodiode connected to a source electrode of the MOSFET are arranged in rows and columns. The gate electrodes of the MOSFET in each row are connected in common, the drain electrodes in odd numbered rows and the drain electrodes in even numbered rows are connected in common, respectively within each column and connected to source electrodes of first and second switching MOSFET, respectively, arranged for each column. Drawn electrodes of the first switching MOSFET and drain electrodes of the second switching MOSFET are connected to first and second output lines, respectively, which are connected to input terminals of a differential amplifier. Photo spurious signals sensed at the drain regions of the MOSFET of the picture elements and noise spikes caused by gatedrain capacitances of the switching MOSFET are eliminated, amd the scanning speed is increased.

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