$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Method and apparatus for manufacturing high-purity silicon rods 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B05D-005/12
출원번호 US-0882817 (1978-03-02)
우선권정보 JP-0021473 (1977-03-02)
발명자 / 주소
  • Yatsurugi Yoshifumi (Fujisawa JPX) Yusa Atsushi (Ninomiya JPX) Takahashi Nagao (Hiratsuka JPX)
출원인 / 주소
  • Kabushiki Kaisha Komatsu Seisakusho (Tokyo JPX 03)
인용정보 피인용 횟수 : 29  인용 특허 : 0

초록

A method of manufacturing high-purity silicon rods by subjecting a silicon compound to pyrolysis on a plurality of rod-shaped high-purity silicon carrier members which have been red-heated by directly passing an electric current therethrough thereby depositing high-purity silicon thereon, characteri

대표청구항

A method of manufacturing high-purity, silicon rods by subjecting a silicon compound to pyrolysis on a plurality of rod-shaped high-purity silicon carrier members which have been red-heated by directly passing an electric current therethrough thereby depositing high-purity silicon thereon, character

이 특허를 인용한 특허 (29)

  1. Troutman, Timothy; Loushin, Bryan J.; Ruschetti, Joe, Apparatus and method for managing a temperature profile using reflective energy in a thermal decomposition reactor.
  2. Miyake, Masami; Saiki, Wataru, Apparatus for producing trichlorosilane and method for producing trichlorosilane.
  3. Keck David W. ; Russell Ronald O. ; Dawson Howard J., Chemical vapor deposition system for polycrystalline silicon rod production.
  4. Keck, David W.; Russell, Ronald O.; Dawson, Howard J., Chemical vapor deposition system for polycrystalline silicon rod production.
  5. Keck, David W.; Russell, Ronald O.; Dawson, Howard J., Chemical vapor deposition system for polycrystalline silicon rod production.
  6. Rogers Leo C. (1651 W. Lindner Mesa AZ 85202) Heitz Alfred J. (2950 E. Dover Mesa AZ 85203), Manufacture of polycrystalline silicon.
  7. Hillabrand, David; Knapp, Theodore, Manufacturing apparatus for depositing a material and an electrode for use therein.
  8. Hillabrand, David; Knapp, Theodore, Manufacturing apparatus for depositing a material and an electrode for use therein.
  9. Dassel, Mark W.; Bressler, David A., Mechanically fluidized silicon deposition systems and methods.
  10. Dassel, Mark W.; Bressler, David A., Mechanically fluidized silicon deposition systems and methods.
  11. Kim, Young Hee; Park, Yong-Ki, Method and apparatus for preparing polysilicon granules.
  12. Hongu, Tatsuhiko; Kato, Yasuhiro; Hagimoto, Hiroshi, Method for manufacturing polycrystalline silicon, and polycrystalline silicon for solar cells manufactured by the method.
  13. Bugl Erwin (St. Radegund ATX) Griesshammer Rudolf (Burghausen DEX) Lorenz Helmut (Burghausen DEX) Hamster Helmut (Burghausen DEX) Kppl Franz (Alttting DEX), Method for the deposition of pure semiconductor material.
  14. Inoue, Shinichiro; Yatsurugi, Yoshifumi, Method of producing high-purity polycrystalline silicon.
  15. Yatsurugi, Yoshifumi; Inoue, Shinichiro, Method of producing polycrystalline silicon for semiconductors from saline gas.
  16. Oda Hiroyuki,JPX, Polycrystal silicon rod having an improved morphyology.
  17. Flagella Robert N. (Ridgefield WA) Dawson Howard J. (Washougal WA), Polycrystalline silicon capable of yielding long lifetime single crystalline silicon.
  18. Endoh, Toshihide; Tebakari, Masayuki; Ishii, Toshiyuki; Sakaguchi, Masaaki, Polycrystalline silicon manufacturing apparatus.
  19. Endoh, Toshihide; Tebakari, Masayuki; Ishii, Toshiyuki; Sakaguchi, Masaaki; Hatakeyama, Naoki, Polycrystalline silicon manufacturing apparatus and manufacturing method.
  20. Kirii, Seiichi; Kitagawa, Teruhisa, Polycrystalline silicon reactor.
  21. Revankar, Vithal; Lahoti, Sanjeev, Process for improved chemcial vapor deposition of polysilicon.
  22. Kendig,James Edward; Landis,David Russell; McQuiston,Todd Michael; Zalar,Michael Matthew, Process for preparation of polycrystalline silicon.
  23. Breneman William C. (Sistersville WV) Flagella Robert N. (Ridgefield WA) Gaston Jon M. (Montreal WA CAX) Hagan David W. (Vancouver WA), Process for the production of ultra high purity polycrystalline silicon.
  24. Keck David W. ; Nagai Kenichi ; Yatsurugi Yoshifumi,JPX ; Morihara Hiroshi ; Izawa Junji,JPX ; Yuthok Renzin Paljor, Production of high-purity polycrystalline silicon rod for semiconductor applications.
  25. Jacubert Serge (Viroflay FRX) Boudot Bernard (Paris FRX) Nataf Philippe (Paris FRX), Production of shaped articles of ultra-pure silicon.
  26. Wang, Tihu; Ciszek, Theodore F., Purified silicon production system.
  27. Herrick, Carlyle S., Reducing powder formation in the production of high-purity silicon.
  28. Qin, Wenjun, Systems and methods for distributing gas in a chemical vapor deposition reactor.
  29. Hara, Masamichi; Yamamoto, Kaoru; Mizusawa, Yasushi, Trap assembly in film forming apparatus.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로