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A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thi

A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

대표청구항 ▼

A Schottky barrier amorphous silicon solar cell: a substrate which is electrically conductive; a body of hydrogenated amorphous silicon having three regions of hydrogenated amorphous silicon of differing conductivity type wherein a first region of n+-type hydrogenated amorphous silicon electrically

A Schottky barrier amorphous silicon solar cell: a substrate which is electrically conductive; a body of hydrogenated amorphous silicon having three regions of hydrogenated amorphous silicon of differing conductivity type wherein a first region of n+-type hydrogenated amorphous silicon electrically contacts said substrate, a second region of intrinsic hydrogenated Amorphous silicon contiguous to said first region and a third region of p-type hydrogenated amorphous silicon contiguous to said second region said third region having a thickness of from about 50 to about 100 angstroms and a p-type doping concentration incorporated during the deposition thereof of from about 5× 1018 to about 5×1020 atoms/cm3, wherein the thickness of said p-type region and concentration of said p-type dopants in said p-type region are selected such that said p-type region is fully ionized by a Schottky barrier high work function metal; a high work function metal layer contiguous to said p-type region forming a Schottky barrier therewith on which solar radiation is incident; and means for electrically contacting said Schottky barrier.