초록 ▼

A process for the production of high purity polycrystalline silicon from a mixture of silicon tetrachloride and trichlorosilane. Such a mixture can be used for the rapid deposition of polycrystalline silicon while, at the same time, producing an excess of trichlorosilane in exhaust gases from the re

A process for the production of high purity polycrystalline silicon from a mixture of silicon tetrachloride and trichlorosilane. Such a mixture can be used for the rapid deposition of polycrystalline silicon while, at the same time, producing an excess of trichlorosilane in exhaust gases from the reaction. The process permits the modification of the reactor design for the economical and energy conscious production of polycrystalline silicon.

대표청구항 ▼

A process for producing pure semiconductor grade polycrystalline silicon in a reaction chamber having insulated walls comprising the steps of: introducing about 7 to 8.2 mole percent trichlorosilane in hydrogen into said reaction chamber through inlets located near the center of said chamber; introd

A process for producing pure semiconductor grade polycrystalline silicon in a reaction chamber having insulated walls comprising the steps of: introducing about 7 to 8.2 mole percent trichlorosilane in hydrogen into said reaction chamber through inlets located near the center of said chamber; introducing about 12 to 13 mole percent silicon tetrachloride in hydrogen into said reaction chamber through inlets located in close proximity to said insulated walls of said reaction chamber; mixing said silicon tetrachloride and trichlorosilane in hydrogen within said reaction chamber; reacting said mixture of silicon tetrachloride and trichlorosilane in hydrogen at a temperature between 900°C. and 1200°C. to form silicon; and depositing said silicon on a filament within said reaction chamber.