초록 ▼

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

대표청구항 ▼

An amorphous silicon solar cell comprising: an electrically conductive substrate; a body of hydrogenated amorphous silicon including a first region of one conductivity type that electrically contacts said substrate, a second, intrinsic region contiguous to said first region and a third region of a c

An amorphous silicon solar cell comprising: an electrically conductive substrate; a body of hydrogenated amorphous silicon including a first region of one conductivity type that electrically contacts said substrate, a second, intrinsic region contiguous to said first region and a third region of a conductivity type opposite to that of said first region and contiguous to said second region, wherein the thickness of said third region and the concentration of the conductivity modifiers in said third region are selected such that said third region is fully ionized by a Schottky barrier metal; a layer of electrically insulating material contiguous to and deposited on said third region of hydrogenated amorphous silicon; a metal layer contiguous to said insulating layer, forming a Schottky barrier therewith which is incident to solar radiation; and means for electrically contacting said Schottky barrier.