초록 ▼

Infiltration reaction products are provided of molten silicon and certain blends of particulated carbon and various particulated inorganic materials substantially unreactive to molten silicon, such as boron nitride particles. These molten silicon infiltration products of reaction are readily machina

Infiltration reaction products are provided of molten silicon and certain blends of particulated carbon and various particulated inorganic materials substantially unreactive to molten silicon, such as boron nitride particles. These molten silicon infiltration products of reaction are readily machinable and can be applied, or formed in-situ as contiguous layers on silicon carbide, or silicon-silicon carbide substrates, etc., to produce multilayer composites having an improved impact strength over the base refractory structure.

대표청구항 ▼

A method for making a silicon carbide composite comprising a refractory base structure and a contiguous machinable or compliant layer structure, which comprises, (1) introducing molten silicon into a mold substantially filled with a composite having a base structure, and a contiguous exterior layer,

A method for making a silicon carbide composite comprising a refractory base structure and a contiguous machinable or compliant layer structure, which comprises, (1) introducing molten silicon into a mold substantially filled with a composite having a base structure, and a contiguous exterior layer, where the base structure is a member selected from (i) a shaped mass of silicon carbide, (ii) a composite of silicon and silicon carbide, and (iii) a carbon fiber preform and the contiguous exterior layer comprises a uniform mixture of particulated carbon and a particulated inorganic material substantially non-reactive to molten silicon and having a Mohs hardness in the range of from about 1 to about 7, (2) allowing the molten silicon to fully infiltrate into said mold, while allowing gases of reaction to vent therefrom and (3) removing the resulting silicon carbide composite from the mold.