[특허]Etching apparatus using a plasma

[미국특허] Etching apparatus using a plasma 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23F-001/02
출원번호	US-0891152 (1978-03-28)
우선권정보	JP-0007957 (1976-01-29); JP-0153314 (1976-12-22)
발명자 / 주소	Yamamoto Shinichi (Yokohama JPX) Sumitomo Yasusuke (Yokohama JPX) Horiike Yasuhiro (Tokyo JPX) Shibagaki Masahiro (Hiratsuka JPX)
출원인 / 주소	Tokyo Shibaura Electric Co., Ltd. (JPX 03)
인용정보	피인용 횟수 : 27 인용 특허 : 9

초록 ▼

An etching device uses a gas activated by a plasma for etching semiconductor elements. The apparatus includes etching chamber in which semiconductor elements are horizontally held by a supporting plate or conveyer and etched. The etching gas introduced from the upper side of the semiconductor elemen

대표청구항 ▼

An etching apparatus for etching an object using a plasma comprising an apparatus body including an etching chamber, a supporting member provided in the etching chamber to separate the etching chamber into an upper space and a lower space, the supporting member including an endless belt horizontally supporting the object thereon and a driving mechanism for driving the endless belt, communicating means including a plurality of separate and distinct through holes formed in the endless belt equally distributed around the object and communicating the upper space of the etching chamber to the lower space thereof, a plasma generator located entirely outside of the etching chamber and activating an introduced gas thereby causing the activated gas to have an etching action, a gas supplying tube connected to the upper space of the etching chamber to feed the activated gas therein, said gas supplying tube having a manifold at its end located in the upper space of the etching chamber and extending along the advancing direction of the belt, and an exhaust tube connected to the lower space of the etching chamber to exhaust the activated gas through the through holes in the belt and the lower space of the etching chamber. An etching apparatus for etching an object using a plasma comprising an apparatus body including an etching chamber, a supporting member provided in the etching chamber to separate the etching chamber into an upper space and a lower space, the supporting member horizontally supporting the object thereon, communicating means including a plurality of separate and distinct through holes formed in the supporting member equally distributed around the object and communicating the upper space of the etching chamber to the lower space thereof, a plasma generator located entirely outside of the etching chamber and activating an introduced gas thereby causing the activated gas to have an etching action, a gas supplying tube connected to the upper space of the etching chamber to feed the activated gas therein, and an exhaust tube connected to the lower space of the etching chamber to exhaust the activated gas through the through holes in the supporting member and the lower space of the etching chamber, a feeding chamber inlet at the inlet end of the etching chamber, a carrier in said feeding chamber and containing a plurality of objects, and a pusher in said feeding chamber and adapted to selectively engage objects on said carrier and position them on said supporting member. An etching apparatus for etching an object using a plasma comprising an apparatus body including an etching chamber, a supporting member provided in an etching chamber to separate the etching chamber into an upper space and a lower space, the supporting member horizontally supporting the object thereon, communicating means including a plurality of separate and distinct through holes formed in the supporting member equally distributed around the object and communicating the upper space of the etching chamber to the lower space thereof, a plasma generator located entirely outside of the etching chamber and activating an introduced gas thereby causing the activated gas to have an etching action, a gas supplying tube connected to the upper space of the etching chamber to feed the activated gas therein, an exhaust tube connected to the lower space of the etching chamber to exhaust the activated gas through the through holes in the supporting member and the lower space of the etching chamber, a receiving chamber at the discharge end of the etching chamber, a carrier in said receiving chamber receiving etched objects from said etching chamber, said receiving carrier including means responsive to delivery of said etched objects to facilitate stacking of said etched objects.

이 특허에 인용된 특허 (9) 인용/피인용 타임라인 분석

Niwa Kazuo (Yokohama JPX), Apparatus for the treatment of semiconductors.
상세보기
Uehara Akira (Yokohama JPX) Nakane Hisashi (Kawasaki JPX), Apparatus for the treatment of wafer materials by plasma reaction.
상세보기
Yamawaki ; Masao ; Aoki ; Katsuo ; Ina ; Osamu ; Suzuki ; Takao ; Oka ; Yo shio ; Hara ; Kunihiko, Apparatus for thermal diffusion of semiconductor devices.
상세보기
Yamamoto Shinichi (Yokohama JPX) Sumitomo Yasusuke (Yokohama JPX) Horiike Yasuhiro (Tokyo JPX) Shibagaki Masahiro (Hiratsuka JPX), Continuous gas plasma etching apparatus.
상세보기
Yamamoto ; Shinichi ; Sumitomo ; Yasusuke ; Horiike ; Yasuhiro ; Shibag aki ; Masahiro, Etching apparatus using a plasma.
상세보기
Shibagaki Masahiro (Hiratsuka JP) Horiike Yasuhiro (Tokyo JP) Yamazaki Takashi (Yokohama JP), Gas etching method and apparatus.
상세보기
King Robert David (Solihull EN) Hiscutt Robert (Birmingham EN), Metal oxide films.
상세보기
Tsuchimoto ; Takashi, Plasma processor.
상세보기
Skinner James R. (Cupertino CA) Lang ; Jr. Albert (Palo Alto CA), Sputter coating apparatus having improved target electrode structure.
상세보기

이 특허를 인용한 특허 (27) 인용/피인용 타임라인 분석

Richards Edmond A. (Marlton NJ), Apparatus for conveying a semiconductor wafer.
상세보기
Lee, Young Jong; Choi, Jun Young; Jo, Saeng Hyun; Yoon, Byung-Oh; Kim, Gyeong-Hoon; Jeong, Hong-Gi, Apparatus for manufacturing flat-panel display.
상세보기
Hijikata Isamu (Tokyo JPX) Uehara Akira (Yokohama JPX) Nakane Hisashi (Kawasaki JPX), Apparatus for the treatment of semiconductor wafers by plasma reaction.
상세보기
Davies John T. (El Sobrante CA) Reichelderfer Richard F. (Castro Valley CA), Computer controlled system for processing semiconductor wafers.
상세보기
Blackburn Greg (San Jose CA) Kava Joseph (San Jose CA) McGovern Richard (San Jose CA) Rozenzon Yan (San Jose CA), Contaminant reduction improvements for plasma etch chambers.
상세보기
Blackburn Greg ; Kava Joseph ; McGovern Richard ; Rozenzon Yan, Contaminant reduction improvements for plasma etch chambers.
상세보기
Westfall Raymond T. (Seminole FL) Feldl Erich J. (Seminole FL), Continuous gas plasma etching apparatus and method.
상세보기
Diprose Michael F. (Derbyshire GB2) Evans Geoffrey H. (Hartford GB2), Continuous process for the partial sterilization of mushroom casing.
상세보기
Yang, Yixin; Mitsuhashi, Yoshiyuki; Iijima, Masayuki; Wakamatsu, Sadatsugu; Saito, Kazuhiko; Fujii, Tomoharu; Yoshimoto, Tsuyoshi; Hosoya, Togo; Hirono, Takayoshi; Hayashi, Nobuhiro; Kakutani, Nobuaki; Sunagawa, Naoki; Tada, Isao; Hirano, Hiroyuki, Film-forming apparatus.
상세보기
Tawada Yoshihisa (Kobe JPX) Nakayama Takehisa (Kobe JPX) Tai Masahiko (Otsu JPX) Ikuchi Nozomu (Nishinomiya JPX), Glow-discharge decomposition apparatus.
상세보기
Rigali Louis A. ; Hoffman David E. ; Wang Keda, High Throughput plasma treatment system.
상세보기
Rigali, Louis A.; Hoffman, David E.; Wang, Keda; Smith, III, William F., High throughput plasma treatment system.
상세보기
Rigali,Louis A.; Hoffman,David E.; Wang,Keda; Smith, III,William F., High throughput plasma treatment system.
상세보기
Tyler, James Scott, High-speed symmetrical plasma treatment system.
상세보기
Singh,Harmeet; Daugherty,John E.; Vahedi,Vahid; Ullal,Saurabh J., In-situ cleaning of a polymer coated plasma processing chamber.
상세보기
Bok Edward (Burg. Amersfoordtlaan 1171 DR Badheovedorp NLX), Installation for floating transport and processing of substrates.
상세보기
Condrashoff, Robert S.; Fazio, James P.; Hoffman, David E.; Tyler, James S., Material handling system and method for a multi-workpiece plasma treatment system.
상세보기
Condrashoff, Robert Sergel; Fazio, James Patrick; Hoffman, David Eugene; Tyler, James Scott, Material handling system and methods for a multichamber plasma treatment system.
상세보기
Gauldin, Rich; Johnson, Chris; Johnson, David; Martinez, Linnell; Pays-Volard, David; Westerman, Russell; Grivna, Gordon, Method and apparatus for plasma dicing a semi-conductor wafer.
상세보기
Gauldin, Rich; Johnson, Chris; Johnson, David; Martinez, Linnell; Pays-Volard, David; Westerman, Russell; Grivna, Gordon M., Method and apparatus for plasma dicing a semi-conductor wafer.
상세보기
Nguyen, Loi; Sundaresan, Ravishankar, Method and interlevel dielectric structure for improved metal step coverage.
상세보기
DeDontney, Jay Brian; Matthiesen, Richard H.; Kurita, Samuel, Modular injector and exhaust assembly.
상세보기
Maher, Jr., Joseph A.; Zafiropoulo, Arthur W., Multi-planar electrode plasma etching.
상세보기
Yamazaki Takashi (Kawasaki JPX), Plasma etching apparatus.
상세보기
Sexton, Greg, Plasma processing assemblies including hinge assemblies.
상세보기
Shekerjian Brian H. (Tempe AZ) Price J. B. (Scottsdale AZ), Vacuum load lock.
상세보기
Ukai Katsumi (Fuchu JPX) Tsukada Tsutomu (Fuchu JPX) Ikeda Kouji (Fuchu JPX) Adachi Toshio (Fuchu JPX), Vacuum processing apparatus.
상세보기

활용도 분석정보

상세보기

다운로드

내보내기

활용도 Top5 특허

해당 특허가 속한 카테고리에서 활용도가 높은 상위 5개 콘텐츠를 보여줍니다.
더보기 버튼을 클릭하시면 더 많은 관련자료를 살펴볼 수 있습니다.

내보내기 메뉴

내보내기 구분

파일저장
인쇄
메일전송

구성항목

기본정보
상세정보

관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표IPC

저장형식

Text(ASCII format)
Excel format
PIAS분석(.xls)

메일정보

받는사람 (필수): @
보내는사람 (선택): @
제목
내용: KISTI 검색결과 이메일 서비스

안내

총 건의 자료가 검색되었습니다.

다운받으실 자료의 인덱스를 입력하세요. (1-10,000)

검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다.

데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요)

다운로드 파일은 UTF-8 형태로 저장됩니다.
파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오.

Text(ASCII format)
Excel format

AI-Helper ※ AI-Helper는 을 사용합니다.

AI-Helper

안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

연합인증

[미국특허] Etching apparatus using a plasma 원문보기