초록 ▼

A method is described for producing semiconductor films, particularly monocrystalline silicon and germanium films, characterized by the steps of: epitaxially growing on a substrate, such as silicon or sapphire, a layer of dissolvable material, such as sodium fluoride, sodium chloride, or silver; epi

A method is described for producing semiconductor films, particularly monocrystalline silicon and germanium films, characterized by the steps of: epitaxially growing on a substrate, such as silicon or sapphire, a layer of dissolvable material, such as sodium fluoride, sodium chloride, or silver; epitaxially growing on the dissolvable layer a layer of the semiconductor; and dissolving the dissolvable layer, thereby separating the semiconductor from the substrate. The substrate may thus be reused as a matrix for growing many such films. Also a plurality of semiconductor layers may be epitaxially grown on a common substrate each separated by a dissolvable layer, all the latter layers being dissolved at one time to produce a plurality of the semiconductor films.

대표청구항 ▼

A method of producing monocrystalline semiconductor films, characterized by the steps of: (a) epitaxially growing on a substrate at least one layer of a salt dissolvable in water; (b) epitaxially growing on said salt layer a layer of the monocrystalline semiconductor; and (c) dissolving said salt la

A method of producing monocrystalline semiconductor films, characterized by the steps of: (a) epitaxially growing on a substrate at least one layer of a salt dissolvable in water; (b) epitaxially growing on said salt layer a layer of the monocrystalline semiconductor; and (c) dissolving said salt layer with water, thereby separating the monocrystalline semiconductor layer from the substrate.