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Reactor apparatus for plasma etching or deposition 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B44C-001/22
  • C03C-015/00
  • C03C-025/06
출원번호 US-0847349 (1977-10-31)
발명자 / 주소
  • Gorin Georges J. (Emeryville CA) Lindsey
  • Jr. Paul C. (Lafayette CA)
출원인 / 주소
  • Motorola, Inc. (Schaumburg IL 02)
인용정보 피인용 횟수 : 40  인용 특허 : 4

초록

Plasma reactor apparatus which provides improved uniformity of etching or deposition. A uniform radio frequency (RF) field is established between two closely spaced parallel plates disposed within the reactor. One of the plates functions as a manifold for the reactant gases, mixing the gases and dis

대표청구항

A plasma reactor having increased capacity comprising a plurality of spaced apart plates arranged in alternating sequence and adapted to receive workpieces therebetween, means connected to said plates to establish radio frequency fields between adjacent pairs of said plates, said plates being gas di

이 특허에 인용된 특허 (4)

  1. Jacob ; Adir, Apparatus for depositing dielectric films using a glow discharge.
  2. Muto Steve Yoneo (Cupertino CA), Etching thin film circuits and semiconductor chips.
  3. Battey James F. (Los Altos CA) Bersin Richard L. (San Lorenzo CA) Reichelderfer Richard F. (Castro Valley CA) Welty Joseph M. (Fremont CA), Gas plasma reactor and process.
  4. Matsuzaki Reisaku (Tokyo JA) Hosokawa Naokichi (Tokyo JA), Sputter-etching method employing fluorohalogenohydrocarbon etching gas and a planar electrode for a glow discharge.

이 특허를 인용한 특허 (40)

  1. Park, Byoung-Keon; Lee, Ki-Yong; Seo, Jin-Wook; Jeong, Min-Jae; Hong, Jong-Won; Na, Heung-Yeol; Yang, Tae-Hoon; Chung, Yun-Mo; Kang, Eu-Gene; Chang, Seok-Rak; Lee, Dong-Hyun; Lee, Kil-Won; Park, Jong-Ryuk; Choi, Bo-Kyung; Baek, Won-Bong; Maidanchuk, Ivan; So, Byung-Soo; Jung, Jae-Wan, Apparatus for processing substrate.
  2. Yang, Il-Kwang; Je, Sung-Tae; Song, Byoung-Gyu; Kim, Yong-Ki; Kim, Kyong-Hun; Shin, Yang-Sik, Apparatus for processing substrate for supplying reaction gas having phase difference.
  3. Kim, Ki-Hyun; Im, Ki-Vin; Choi, Hoon-Sang; Han, Moon-Hyeong, Atomic layer deposition apparatus.
  4. Kim, Ki-Hyun; Im, Ki-Vin; Choi, Hoon-Sang; Han, Moon-Hyeong, Atomic layer deposition apparatus.
  5. Kanetomo Masafumi (Suginami JPX) Tachi Shinichi (Sayama JPX) Tsujimoto Kazunori (Higashiyamato JPX) Mukai Kiichiro (Hachioji JPX) Daikoku Takahiro (Ushiku JPX) Kieda Shigekazu (Niihari JPX) Shindo Ke, Dry etching apparatus.
  6. Nagatomo Masao (Itami JPX) Abe Haruhiko (Takarazuka JPX) Mizuguchi Kazuo (Amagasaki JPX), Dry etching device.
  7. Boldish Steven I. (Plano TX) Ciofalo Joseph S. (Cerritos CA), Epitaxial heater apparatus and process.
  8. Tawada Yoshihisa (Kobe JPX) Nakayama Takehisa (Kobe JPX) Tai Masahiko (Otsu JPX) Ikuchi Nozomu (Nishinomiya JPX), Glow-discharge decomposition apparatus.
  9. Gondhalekar,Sudhir; Cho,Tom K.; Guenther,Rolf; Takehiro,Shigeru; Nohira,Masayoshi; Ishikawa,Tetsuya; Mukuti,Ndanka O., High density plasma CVD chamber.
  10. Dvorsky, Edward Frank; Wagener, Fred J., Low temperature deposition of dielectric materials in magnetoresistive random access memory devices.
  11. Brass, William J.; Fierro, Louis; Getty, James D., Magnetic clips and substrate holders for use in a plasma processing system.
  12. Yamazaki Shunpei (Tokyo JPX), Method and apparatus for forming non-single crystal layer.
  13. Yamazaki Shunpei (Tokyo JPX), Method and apparatus for forming non-single-crystal layer.
  14. Yamazaki Shunpei (Tokyo JPX), Method and apparatus for forming non-single-crystal layer.
  15. Yamazaki Shunpei (Tokyo JPX), Method and apparatus for forming non-single-crystal layer.
  16. Yamazaki, Shunpei, Method for the manufacture of an insulated gate field effect semiconductor device.
  17. Fujimura Shuzo (Tokyo JPX) Motoki Yasunari (Kawasaki JPX) Kato Yoshikazu (Mizusawa JPX), Method of removing photoresist on a semiconductor wafer.
  18. Maher, Jr., Joseph A.; Zafiropoulo, Arthur W., Multi-planar electrode plasma etching.
  19. Bolden, II, Thomas V.; Fierro, Louis; Getty, James D., Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes.
  20. Bolden, Thomas V.; Fierro, Louis; Getty, James D., Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes.
  21. Fazlin Fazal A. (St. Petersburg FL), Paired electrodes for plasma chambers.
  22. Fazlin Fazal A. (11400 4th St. N. #101 St. Petersburg FL 33702), Plasma desmearing apparatus and method.
  23. Fazlin Fazal A. (Saint Anthony Village MN), Plasma desmearing apparatus and method.
  24. Fukuoka, Yusuke; Kishimoto, Katsushi, Plasma processing apparatus and plasma processing method.
  25. Kishimoto, Katsushi; Fukuoka, Yusuke, Plasma processing apparatus and semiconductor device manufactured by the same apparatus.
  26. Kishimoto, Katsushi; Fukuoka, Yusuke, Plasma processing apparatus and semiconductor device manufactured by the same apparatus.
  27. Kishimoto, Katsushi; Fukuoka, Yusuke, Plasma processing apparatus with an exhaust port above the substrate.
  28. Susko Robin A. (Owego NY) Wilson James W. (Vestal NY), Plasma reactor having segmented electrodes.
  29. Tsutsui Koichi (Kyoto JPX) Ikeda Shoji (Osaka JPX) Nishizawa Koji (Osaka JPX) Yagi Makoto (Osaka JPX) Kubo Nobuaki (Osaka JPX), Powder treating method and apparatus used therefor.
  30. Fujimura, Shuzo, Process and apparatus for plasma treatment.
  31. Buil Boudewijn J. A. M. (Belfeld NLX), Process and device for igniting an arc with a conducting plasma channel.
  32. Desilets, Brian H.; Gunther, Thomas A.; Heybruck, deceased, William C., Reactive ion etching chamber.
  33. Lo John C. (Endwell NY) Lu Neng-hsing (Endwell NY), Reactor for plasma desmear of high aspect ratio hole.
  34. Yamazaki Shunpei,JPX, Semiconductor device, manufacturing method, and system.
  35. Yamazaki Shunpei,JPX, Semiconductor device, manufacturing method, and system.
  36. Babu Suryadevara V. (One Carol Ct. Potsdam NY 13676) Lu Neng-hsing (1206 Park Manor Blvd. Endwell NY 13760) Nilsen Carl-Otto (1800 King Street Vestal NY 13850), Side source center sink plasma reactor.
  37. Bauer Hans J. (Boeblingen DEX), Sputtering apparatus.
  38. Yang, Il-Kwang; Je, Sung-Tae; Song, Byoung-Gyu; Kim, Yong-Ki; Kim, Kyong-Hun; Shin, Yang-Sik, Substrate processing apparatus including auxiliary gas supply port.
  39. Fukuoka,Yusuke; Fujioka,Yasushi; Kishimoto,Katsushi; Fukuda,Hiroyuki; Nomoto,Katsuhiko, Thin film formation apparatus including engagement members for support during thermal expansion.
  40. Gondhalekar,Sudhir; Cho,Tom K.; Guenther,Rolf; Kim,Steve H.; Moshfegh,Mehrdad; Takehiro,Shigeru; Kring,Thomas; Ishikawa,Tetsuya, Upper chamber for high density plasma CVD.
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