초록 ▼

In a method of smoothing the edges of a window through a PSG film of a semiconductor device, a masking film is provided under the PSG film, so as to prevent impurities of the PSG film from penetrating into semiconductor substrate during the heating of the PSG film for the smoothing of the edges. A m

In a method of smoothing the edges of a window through a PSG film of a semiconductor device, a masking film is provided under the PSG film, so as to prevent impurities of the PSG film from penetrating into semiconductor substrate during the heating of the PSG film for the smoothing of the edges. A masking film, for example, an Si3N4 film, does not, however, inhibit the penetration of hydrogen gas, which can improve the properties of an MIS semiconductor device.

대표청구항 ▼

A process for producing a semiconductor device comprising, a semiconductor substrate, on which a source region and a drain region are formed with a gate region positioned between said source and drain regions, a gate insulating film formed on said gate region, and a gate electrode formed on said gat

A process for producing a semiconductor device comprising, a semiconductor substrate, on which a source region and a drain region are formed with a gate region positioned between said source and drain regions, a gate insulating film formed on said gate region, and a gate electrode formed on said gate insulating film, said process comprising the steps of: forming said gate insulating film; forming said gate electrode on said gate insulating film; forming said source and drain regions in such a manner that said gate electrode is positioned between these regions; forming a masking film over said source and drain regions and gate electrode; forming a glass layer over said masking film; opening precursory electrode windows through predetermined portions of said glass layer; subjecting said glass layer to a heat treatment; opening an aperture at the precursory windows through said masking film, thereby completing electrode windows; depositing an electrode material on the so opened electrode windows, which electrode material extends from the electrode windows; and subjecting said semiconductor substrate to a heat treatment under a hydrogen atmosphere subsequent to said heat treatment step of the glass layer and prior to said depositing step of the electrode material.