초록 ▼

A high-voltage circuit for insulated gate field-effect transistors (MOSFETs) is provided wherein two MOSFETs are connected in series, the source and gate of the first MOSFET being respectively used as a source terminal and gate terminal of the high-voltage circuit, the drain of the second MOSFET bei

A high-voltage circuit for insulated gate field-effect transistors (MOSFETs) is provided wherein two MOSFETs are connected in series, the source and gate of the first MOSFET being respectively used as a source terminal and gate terminal of the high-voltage circuit, the drain of the second MOSFET being used as a drain terminal of the circuit. First and second resistors are connected in series between the source terminal and the drain terminal, and a biasing voltage supply is connected between the juncture of both the resistors and the gate of the second MOSFET. By virtue of these connections the “on”resistance of the high-voltage circuit is improved due to the effect of the biasing voltage effect in bringing the second MOSFET into an “on”condition.

대표청구항 ▼

A high-voltage MOSFET (insulated gate field-effect transistor) circuit wherein n MOSFETs are connected in series by electrically connecting a drain of the m-th (1≤m≤n-1) MOSFET and a source of the (m+1)-th MOSFET, a source and gate of the first MOSFET being respectively used as a source terminal and

A high-voltage MOSFET (insulated gate field-effect transistor) circuit wherein n MOSFETs are connected in series by electrically connecting a drain of the m-th (1≤m≤n-1) MOSFET and a source of the (m+1)-th MOSFET, a source and gate of the first MOSFET being respectively used as a source terminal and gate terminal of the MOSFET circuit, a drain of the n-th MOSFET being used as a drain terminal of the MOSFET circuit, and wherein divided voltages obtained by dividing a voltage applied across the source and drain terminals, by means of a first voltage divider circuit in which a plurality of resistors are connected in series are applied to gates of the second to n-th MOSFETs; the high-voltage MOSFET circuit being characterized by comprising means for holding the second to n-th MOSFETs in an “on”state by applying bias voltages from a bias voltage supply to the respective gates of said second to n-th MOSFETs.