초록 ▼

A semiconductor pressure sensor having plural pressure sensitive diaphragms and capable of producing electric signals of at least two pressures. A semiconductor pressure sensor has a semiconductor single crystal chip (1) on which two diaphragms (12a, 12b) are shaped, pairs of strain gauges (13a and

A semiconductor pressure sensor having plural pressure sensitive diaphragms and capable of producing electric signals of at least two pressures. A semiconductor pressure sensor has a semiconductor single crystal chip (1) on which two diaphragms (12a, 12b) are shaped, pairs of strain gauges (13a and 14a, and 13b and 14b), each of which pairs are constructed on each pressure sensitive diaphragm, electrodes (15a and 16a, and 15b and 16b) which are provided for electrical connections of these strain gauges on the semiconductor single crystal, and an insulating substrate of borosilicate glass, the thermal expansion coefficient is substantially equal tol that of said semiconductor single-crystal chip, wherein the semiconductor single-crystal chip (1) and the glass substrate (2) are bonded to each other by an Anodic Bonding method, thereby being able to obtain a semiconductor pressure sensor which scarcely producing errors outputs.

대표청구항 ▼

A semiconductor pressure sensor comprising: a single-crystal semiconductor chip on which at least two pressure sensitive diaphragms are formed; strain gauge means constructed on the respective diaphragms of said chip to produce output signals, one of the output signals being produced in response to

A semiconductor pressure sensor comprising: a single-crystal semiconductor chip on which at least two pressure sensitive diaphragms are formed; strain gauge means constructed on the respective diaphragms of said chip to produce output signals, one of the output signals being produced in response to an absolute pressure of atmosphere and the other output signals being produced in accordance with relative values of pressures to be measured with respect to the atmosphere; electrodes provided on said chip for electrical connection of said strain gauge means; and an insulating substrate having a thermal expansion coefficient substantially equal to that of said chip and attached to said chip by an anodic bonding method to form chambers together with the diaphragms of said chip, one of the chambers being maintained at vacuum and the pressures to be measured being led to the other chambers.