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Method for end point detection in a plasma etching process 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B44C-001/22
  • C03C-015/00
  • C03C-025/06
출원번호 US-0171271 (1980-07-22)
발명자 / 주소
  • Curtis Bernard J. (Gattikon CHX)
출원인 / 주소
  • RCA Corporation (New York NY 02)
인용정보 피인용 횟수 : 50  인용 특허 : 4

초록

An improved plasma etching apparatus having a light pipe inserted through the chamber wall for coupling light emitted by different chemical species out of the chamber. The light pipe collects the emission directly or after reflection from the coated surface of a substrate. Stabilization of the inten

대표청구항

In a method for measuring the end point of a plasma etching process comprising mounting a light pipe in the wall of a plasma chamber, which light pipe extends from outside to within the chamber, positioning a substrate having a coating thereon, a portion of which is to be removed by plasma etching,

이 특허에 인용된 특허 (4)

  1. Uehara Akira (Yokohama JPX) Kiyota Hiroyuki (Hiratsuka JPX) Nakane Hisashi (Kawasaki JPX) Toda Shozo (Fujisawa JPX), Apparatus for treatment with gas plasma.
  2. Gorin Georges J. (Emeryville CA), Method for process control of a plasma reaction.
  3. Keller Jed V. (Mesa AZ), Plasma development process controller.
  4. Macourt Dennis J. C. (21 Koonawarra Ave. ; Lindfield Sydney ; N.S.W. AUX), Separation and analysis of particle coatings.

이 특허를 인용한 특허 (50)

  1. Birang, Manush; Kolte, Gregory L.; Doyle, Terry Lee; Johansson, Nils; Luscher, Paul E.; Poslavsky, Leonid, Apparatus and method for endpoint control and plasma monitoring.
  2. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  3. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  4. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  5. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for semiconductor processing operations.
  6. Birang Manoocher ; Pyatigorsky Grigory, Apparatus and method for in-situ monitoring of chemical mechanical polishing operations.
  7. O\Brien Michael J. (Bethel CT) Wallace Gordon F. (Newtown CT), Apparatus for controlling a plasma.
  8. Tang, Wallace T. Y., Apparatus for detection of thin films during chemical/mechanical polishing planarization.
  9. Pei, Shao-Kai, CVD device.
  10. Thomas, James W.; Noel, Ray; Wool, Mitchell R., Coating ablating apparatus with coating removal detection.
  11. Thomas, James W.; Wool, Mitchell R., Color sensing for laser decoating.
  12. Norrbakhsh, Hamid; Welch, Mike; Luscher, Paul; Salimian, Siamak; Mays, Brad, Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using an in-situ wafer temperature optical probe.
  13. Jens Stolze DE, Detecting a process endpoint from a change in reflectivity.
  14. Grimbergen Michael N. ; Lill Thorsten B., Endpoint detection for semiconductor processes.
  15. Sui, Zhifeng; Luscher, Paul E; Johansson, Nils; Welch, Michael D, Endpoint detection in substrate fabrication processes.
  16. Michael N. Grimbergen ; Thorsten B. Lill, Endpoint detection in the fabrication of electronic devices.
  17. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.
  18. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.
  19. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
  20. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
  21. Leping Li ; James Albert Gilhooly ; Clifford Owen Morgan, III ; William Joseph Surovic ; Cong Wei, Indirect endpoint detection by chemical reaction and chemiluminescence.
  22. Li Leping ; Gilhooly James Albert ; Morgan ; III Clifford Owen ; Surovic William Joseph ; Wei Cong, Indirect endpoint detection by chemical reaction and chemiluminescence.
  23. Zhang Zhuomin M. ; Datla Raju U. ; Hanssen Leonard M., Infrared neutral-density filter having copper alloy film.
  24. Frum, Coriolan I.; Sui, Zhifeng; Shan, Hongqing, Interferometric endpoint detection in a substrate etching process.
  25. Brearley William Harrington (Poughkeepsie NY) Forslund Donald Charles (Wappingers Falls NY) Ormond ; Jr. Douglas William (Wappingers Falls NY) Sliss Gerald Joseph (Poughkeepsie NY), Ion milling end point detection method and apparatus.
  26. Thomas, James W.; Wool, Mitchell R.; Cargill, Robert L., Laser ablation for the environmentally beneficial removal of surface coatings.
  27. Simko, Richard T., Laser film debonding method.
  28. Tien Zu-Jean (Poughkeepsie NY), Laser luminescence monitor for material thickness.
  29. Klippert ; II Walter E ; Kadavanich Vikorn Martin,DEX, Method and apparatus for improving accuracy of plasma etching process.
  30. Klippert II Walter E ; Kadavanich Vikorn Martin,DEX, Method and apparatus for improving accuracy of plasma etching process.
  31. Birang, Manoocher; Swedek, Boguslaw A.; Kim, Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
  32. Birang,Manoocher; Swedek,Boguslaw A.; Kim,Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
  33. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Method for in-situ endpoint detection for chemical mechanical polishing operations.
  34. Thomas, James W.; Cargill, Robert L.; Wool, Mitchell R., Methods for stripping and modifying surfaces with laser-induced ablation.
  35. Spencer John E. (Plano TX) Borel Richard A. (Garland TX) Linxwiler Kenneth E. (McKinney TX) Hoff Andrew M. (State College PA), Microwave apparatus for generating plasma afterglows.
  36. Johnson, David, Optical emission interferometry for PECVD using a gas injection hole.
  37. Chen Lee (Poughkeepsie NY) Khoury Henri A. (Yorktown Heights NY) Seymour Harlan R. (Morton Grove IL), Optical emission spectroscopy end point detection in plasma etching.
  38. Vancata Oldrich (Skultuna SEX), Optical monitoring device for determining faults in a plasma burner.
  39. Litvak Herbert E., Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment.
  40. Litvak Herbert E., Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment.
  41. Ookawa, Yoshihito; Hayashi, Daisuke, Plasma processing unit, window member for plasma processing unit and electrode plate for plasma processing unit.
  42. Donnelly Vincent M. (Berkeley Heights NJ) Flamm Daniel L. (Chatham Township ; Morris County NJ), Plasma-assisted etch process with endpoint detection.
  43. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing assembly with a window.
  44. Birang, Manoocher; Gleason, Allan, Polishing pad for in-situ endpoint detection.
  45. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing pad with window and method of fabricating a window in a polishing pad.
  46. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  47. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  48. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  49. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  50. Bennett Reid S. (Wappingers Falls NY) Ephrath Linda M. (LaGrange NY) Schwartz Geraldine C. (Poughkeepsie NY) Selwyn Gary S. (Hopewell Junction NY), Trench etch endpoint detection by LIF.
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