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| 국가/구분 | United States(US) Patent 등록 |
|---|---|
| 국제특허분류(IPC7판) |
|
| 출원번호 | US-0194422 (1980-10-06) |
| 발명자 / 주소 |
|
| 인용정보 | 피인용 횟수 : 1002 인용 특허 : 0 |
In a photolithographic method for the manufacture of integrated circuits a mask having a pattern is imaged on a photosensitive layer coating a semiconductor substrate by a projection lens. To improve the resolving capability and to obviate adverse effects, e.g. standing waves and inhomogeneous expos
In a photolithographic method for the manufacture of integrated circuits a mask having a pattern is imaged on a photosensitive layer coating a semiconductor substrate by a projection lens. To improve the resolving capability and to obviate adverse effects, e.g. standing waves and inhomogeneous exposure, the space between the substrate and the adjacent boundary face of a projection lens is filled during exposure with a transparent liquid having the same refractive index as the photosensitive layer.
A photolithographic method of printing a pattern onto a semiconductor substrate, particularly for the manufacture of an integrated circuit, comprising the steps of: coating said substrate with a photosensitive layer; juxtaposing a projection lens with said layer across a space separating said lens f
A photolithographic method of printing a pattern onto a semiconductor substrate, particularly for the manufacture of an integrated circuit, comprising the steps of: coating said substrate with a photosensitive layer; juxtaposing a projection lens with said layer across a space separating said lens from said layer; imaging a pattern of a mask through said lens onto said photosensitive layer to expose said layer; and filling said space between said layer and a juxtaposed boundary face of said lens with a transparent liquid during the exposure of said layer, the refractive index of said liquid being selected so as to be close to the refractive index of said layer, said liquid being capable of wetting said layer and subsequently incapable of attacking same.
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