초록 ▼

A method of forming by CVD technique a layer of material with good uniformity and reproducibility on the surfaces of a plurality of substrates supported within the reaction chamber. The feature of the invention is that a gaseous mixture containing a reaction gas is supplied into the reaction chamber

A method of forming by CVD technique a layer of material with good uniformity and reproducibility on the surfaces of a plurality of substrates supported within the reaction chamber. The feature of the invention is that a gaseous mixture containing a reaction gas is supplied into the reaction chamber from the inlet of the reaction chamber and the auxiliary gas nozzle provided between the inlet and the exhaust in a predetermined control manner. Moreover, part of the gaseous mixture within the reaction chamber is sampled from the gas flow for the measurement of the concentration of the reaction gas, and from the measured results is determined the rate of gas supply from the auxiliary gas nozzle.

대표청구항 ▼

A method for chemical vapor deposition of layers of material individually onto the surfaces of a plurality of substrates within a reaction chamber having a primary gas inlet at one end and a gas exhaust at another end, which comprises the steps of: (a) supporting a plurality of substrates within sai

A method for chemical vapor deposition of layers of material individually onto the surfaces of a plurality of substrates within a reaction chamber having a primary gas inlet at one end and a gas exhaust at another end, which comprises the steps of: (a) supporting a plurality of substrates within said reaction chamber with said substrates being arranged in series in a direction extending from the inlet to the exhaust, (b) supplying a gaseous mixture containing a gaseous compound of said material into said reaction chamber through said inlet and causing the gaseous mixture to flow through the reaction chamber over the plurality of said substrates to said exhaust, (c) heating said substrates to a temperature at which chemical vapor deposition onto said substrates takes place during the flow of said gaseous mixture through said reaction chamber, (d) removing a sample of said gaseous mixture from the flow of said gaseous mixture and from said reaction chamber at a position along the series-arranged substrates between said inlet and said exhaust, (e) measuring a concentration of said gaseous compound in said sample of the gaseous mixture removed from said reaction chamber, and (f) supplying, in addition to said gaseous mixture, an auxiliary gas which contains said gaseous compound into the flow of said gaseous mixture in said reaction chamber to compensate for the consumed gaseous compound in said reaction chamber in response to the measurement of said concentration of said gaseous compound whereby the chemical vapor deposition in said reaction chamber is maintained substantially uniform along the length of the series-arranged substrates.