초록 ▼

A method of producing III-V materials by reducing a complex salt in a hydrogen atmosphere is shown. For example, complex salts reduce to InP or GaAs. The salts are conveniently prepared by coprecipitation from a salt solution or by other methods. The stoichiometry can be modified by applying an over

A method of producing III-V materials by reducing a complex salt in a hydrogen atmosphere is shown. For example, complex salts reduce to InP or GaAs. The salts are conveniently prepared by coprecipitation from a salt solution or by other methods. The stoichiometry can be modified by applying an overpressure of the more volatile element or elements during reduction.

대표청구항 ▼

A method of producing a material comprising at least one first element selected from the group consisting of gallium and indium, and at least one second element selected from the group consisting of antimony, arsenic, and phosphorus, characterized by reducing in an atmosphere comprising hydrogen at

A method of producing a material comprising at least one first element selected from the group consisting of gallium and indium, and at least one second element selected from the group consisting of antimony, arsenic, and phosphorus, characterized by reducing in an atmosphere comprising hydrogen at least one salt of the form Ma(NH4)b Hc(XO4)y, where M is said at least one first element, and X is said at least one second element, where a≤y and (b+c)/3=y-a.