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Fabrication of MOSFETs by laser annealing through anti-reflective coating 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/263
  • H01L-021/265
출원번호 US-0284298 (1981-07-17)
발명자 / 주소
  • Teng Tzu-Chan (San Jose CA)
출원인 / 주소
  • National Semiconductor Corporation (Santa Clara CA 02)
인용정보 피인용 횟수 : 35  인용 특허 : 4

초록

A method of annealing an ion implanted semiconductor device using an antireflective dielectric coating on the device for maximizing the coupling of photon radiation into the device. An IGFET device made in accordance with the method, is shown.

대표청구항 ▼

A method of annealing a semiconductor MOSFET device in which ions are implanted in the source and drain regions to create localized pn junctions comprising the steps of: depositing an antireflective dielectric coating on said MOSFET device; and irradiating said device with photons at a power level b

이 특허에 인용된 특허 (4)

  1. King ; William J., Inexpensive solar cell and method therefor.
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  2. Cross, Sydney H., Method and apparatus for the production of composite sheet material and a sheet material produced thereby.
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  3. Kirkpatrick Allen R. (Lexington MA), Method involving pulsed beam processing of metallic and dielectric materials.
    상세보기
  4. Lesk ; Israel A. ; Pryor ; Robert A., Method of semiconductor solar energy device fabrication.
    상세보기

이 특허를 인용한 특허 (35)

  1. Camm,David Malcolm; Bumbulovic,Mladen; Cibere,Joseph; Elliott,J. Kiefer; McCoy,Steve; Stuart,Greg, Apparatuses and methods for suppressing thermally-induced motion of a workpiece.
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  2. Lowe Arthur T. (Chandler AZ) Wilson Syd R. (Phoenix AZ) Wu Schyi-yi (Mesa AZ), Fabricating a semiconductor device with reduced gate leakage.
    상세보기
  3. Drowley, Clifford I., Grain boundary confinement in silicon-on-insulator films.
    상세보기
  4. Camm, David Malcolm; Elliot, J. Kiefer, Heat-treating methods and systems.
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  5. Camm, David Malcolm; Elliott, J. Kiefer, Heat-treating methods and systems.
    상세보기
  6. Camm, David Malcolm; Elliott, J. Kiefer, Heat-treating methods and systems.
    상세보기
  7. Arai Tetsuji (Tachikawa JPX) Mimura Yoshiki (Yokohama JPX), Heating method of semiconductor wafer.
    상세보기
  8. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX ; Ishihara Hiroaki,JPX, Laser process.
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  9. Yamazaki, Shunpei; Zhang, Hongyong; Ishihara, Hiroaki, Laser process.
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  10. Yamazaki,Shunpei; Zhang,Hongyong; Ishihara,Hiroaki, Laser process.
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  11. Nishimura Tadashi (Hyogo JPX), Method for fabricating monocrystalline semiconductor layer on insulating layer by laser crystallization using a grid of.
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  12. Yu Chang (Boise ID) Doan Trung T. (Boise ID) Sandhu Gurtej S. (Boise ID), Method for improving step coverage of a metallization layer on an integrated circuit by use of a high melting point meta.
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  13. Zhu,Huilong; Gluschenkov,Oleg; Sung,Chun Yung, Method of fabricating a field effect transistor having improved junctions.
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  14. Goldbach, Matthias; Holz, Jürgen, Method of fabricating an integrated circuit.
    상세보기
  15. Sugahara Kazuyuki (Hyogo JPX) Nishimura Tadashi (Hyogo JPX) Kusunoki Shigeru (Hyogo JPX) Inoue Yasuo (Hyogo JPX), Method of forming single crystal layer on dielectric layer by controlled rapid heating.
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  16. Shunpei Yamazaki JP; Hongyong Zhang JP; Hiroaki Ishihara JP, Method of manufacturing a semiconductor device utilizing a laser annealing process.
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  17. Tsukamoto Hironori,JPX, Method of manufacturing semiconductor devices.
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  18. Camm, David Malcolm; Sempere, Guillaume; Kaludjercic, Ljubomir; Stuart, Gregory; Bumbulovic, Mladen; Tran, Tim; Dets, Sergiy; Komasa, Tony; Rudolph, Marc; Cibere, Joseph, Methods and systems for supporting a workpiece and for heat-treating the workpiece.
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  19. Camm, David Malcolm; Sempere, Guillaume; Kaludjercic, Ljubomir; Stuart, Gregory; Bumbulovic, Mladen; Tran, Tim; Dets, Sergiy; Komasa, Tony; Rudolph, Marc; Cibere, Joseph, Methods and systems for supporting a workpiece and for heat-treating the workpiece.
    상세보기
  20. Talwar Somit ; Verma Gaurav, Methods for annealing an integrated device using a radiant energy absorber layer.
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  21. Markle David A. ; Talwar Somit ; Hawryluk Andrew M., Methods for determining wavelength and pulse length of radiant energy used for annealing.
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  22. Seguchi Youhei,JPX ; Tokushige Nobuaki,JPX, Process for fabricating SOI substrate with high-efficiency recovery from damage due to Ion implantation.
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  23. Sugahara Kazuyuki (Hyogo JPX) Nishimura Tadashi (Hyogo JPX) Kusunoki Shigeru (Hyogo JPX) Inoue Yasuo (Hyogo JPX), Process for producing single crystal semiconductor layer and semiconductor device produced by said process.
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  24. Mukai, Ryoichi, Process for producing single crystalline semiconductor island on insulator.
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  25. Stepan Essaian ; Abdalla A. Naem BE, Selective high concentration doping of semiconductor material utilizing laser annealing.
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  26. Stephen D. Russell ; Douglas A. Sexton ; Bruce W. Offord ; George P. Imthurn, Self-aligned MOSFET with electrically active mask.
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  27. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for forming the same.
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  28. Yamazaki, Shunpei; Zhang, Hongyong; Takemura, Yasuhiko, Semiconductor device and method for forming the same.
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  29. Yamazaki, Shunpei; Zhang, Hongyong; Takemura, Yasuhiko, Semiconductor device having an aluminum nitride film.
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  30. Camm, David Malcolm; Cibere, Joseph; Bumbulovic, Mladen, Systems and methods for supporting a workpiece during heat-treating.
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  31. Camm,David M.; Kervin,Shawna; Lefrancois,Marcel Edmond; Stuart,Greg, Temperature measurement and heat-treating methods and system.
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  32. Camm, David M.; Kervin, Shawna; Lefrancois, Marcel Edmond; Stuart, Greg, Temperature measurement and heat-treating methods and systems.
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  33. Tabery, Cyrus E.; Paton, Eric N.; Yu, Bin; Xiang, Qi; Ogle, Robert B., Tuning absorption levels during laser thermal annealing.
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  34. Cox Jack N. (Sunnyvale CA), UV-vis characteristic writing in silicon nitride and oxynitride films.
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  35. Camm, David Malcolm; Cibere, Joseph; Stuart, Greg; McCoy, Steve, Workpiece breakage prevention method and apparatus.
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