초록 ▼

A film forming method by plasma sputtering is provided to attain a composite film on a substrate. A target plate having metal materials in a different pattern is prepared in opposition to the substrate. A plasma is created by a planar magnetron sputtering electrode structure. The plasma is shifted m

A film forming method by plasma sputtering is provided to attain a composite film on a substrate. A target plate having metal materials in a different pattern is prepared in opposition to the substrate. A plasma is created by a planar magnetron sputtering electrode structure. The plasma is shifted magnetically on the target plate by at least three magnetically coupled magnetic poles to deposit the materials into a film with a uniform thickness and a desired composition on the substrate.

대표청구항 ▼

A film forming method for forming a film on a substrate comprising the steps of: preparing a target plate having at least a center region and a second region around said center region of different materials, and forming a plasma above said target plate for sputtering said materials out of said targe

A film forming method for forming a film on a substrate comprising the steps of: preparing a target plate having at least a center region and a second region around said center region of different materials, and forming a plasma above said target plate for sputtering said materials out of said target plate and depositing onto said substrate, and controlling excitation current flowing in a solenoid to shift said plasma across a boundary between said two regions in a planar magnetron sputtering structure whereby said film is provided with desired composition of said materials.