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[미국특허] Optical emission spectroscopy end point detection in plasma etching 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B44C-001/22
  • C03C-015/00
  • C03C-025/06
출원번호 US-0575611 (1984-01-31)
발명자 / 주소
  • Chen Lee (Poughkeepsie NY) Khoury Henri A. (Yorktown Heights NY) Seymour Harlan R. (Morton Grove IL)
출원인 / 주소
  • International Business Machines Corporation (Armonk NY 02)
인용정보 피인용 횟수 : 68  인용 특허 : 3

초록 ▼

A method for etching a batch of semiconductor wafers to end point using optical emission spectroscopy is described. The method is applicable to any form of dry plasma etching which produces an emission species capable of being monitored. In a preferred embodiment, as well as a first alternative embo

대표청구항 ▼

A method of etching a layer of material to end point, comprising the steps of: monitoring an intensity of emission of a species produced during an etching process; detecting a time at which a change in such intensity of emission occurs; calculating a time period extending in length from the time of

이 특허에 인용된 특허 (3) 인용/피인용 타임라인 분석

  1. Latos Thomas S. (Carpentersville IL), Method and apparatus for controlling plasma etching.
    상세보기
  2. Busta Heinz H. (Park Ridge IL) Lajos Robert E. (Crystal Lake IL) Bhasin Kul B. (Schaumburg IL), Method for end point detection during plasma etching.
    상세보기
  3. Curtis Bernard J. (Gattikon CHX), Method for end point detection in a plasma etching process.
    상세보기

이 특허를 인용한 특허 (68) 인용/피인용 타임라인 분석

  1. Li Leping ; Gilhooly James A. ; Lipori Robert B. ; Morgan ; III Clifford O. ; Surovic William J. ; Wei Cong, Accumulator for slurry sampling.
    상세보기
  2. Shen, Hsueh Chi; Lin, Chun Hsien, Advanced process control for semiconductor processing.
    상세보기
  3. Shen, Hsueh Chi; Lin, Chun-Hsien, Advanced process control for semiconductor processing.
    상세보기
  4. Savage Richard N. (Livermore CA), Apparatus and method for automatically identifying chemical species within a plasma reactor environment.
    상세보기
  5. Dennis Timothy A. (Bloom Township ; Wood County OH), Apparatus and method for maintaining a uniform etching solution composition.
    상세보기
  6. Grimbergen, Michael; Pan, Shaoher X., Apparatus and method for monitoring processing of a substrate.
    상세보기
  7. Flinchbaugh Bruce E. (Dallas TX) Dolins Steven B. (Dallas TX) Srivastava Aditya (Richardson TX) Reese Jon (Waxahachie TX), Apparatus and method for production process diagnosis using dynamic time warping.
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  8. Grimbergen Michael ; Pan Shaoher X., Apparatus for monitoring processing of a substrate.
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  9. Michael N. Grimbergen ; Xue-Yu Qian, Chamber having improved process monitoring window.
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  10. Mikoshiba Nobuo,JPX ; Ohmi Tadahiro,JPX ; Tsubouchi Kazuo,JPX ; Masu Kazuya,JPX ; Suzuki Nobumasa,JPX, Chemical vapor deposition apparatus.
    상세보기
  11. Hanawa,Hiroji; Tanaka,Tsutomu; Collins,Kenneth S.; Al Bayati,Amir; Ramaswamy,Kartik; Nguyen,Andrew, Chemical vapor deposition plasma process using an ion shower grid.
    상세보기
  12. Hanawa,Hiroji; Tanaka,Tsutomu; Collins,Kenneth S.; Al Bayati,Amir; Ramaswamy,Kartik; Nguyen,Andrew, Chemical vapor deposition plasma process using plural ion shower grids.
    상세보기
  13. Hanawa, Hiroji; Tanaka, Tsutomu; Collins, Kenneth S.; Al-Bayati, Amir; Ramaswamy, Kartik; Nguyen, Andrew, Chemical vapor deposition plasma reactor having plural ion shower grids.
    상세보기
  14. Jens Stolze DE, Detecting a process endpoint from a change in reflectivity.
    상세보기
  15. Chao Ying-Chen,TWX ; Lin Ting-Hwang,TWX, Dry etch endpoint method.
    상세보기
  16. Leping Li ; James Albert Gilhooly ; Clifford Owen Morgan, III ; Cong Wei ; Chienfan Yu, Endpoint detection by chemical reaction.
    상세보기
  17. Li Leping ; Gilhooly James Albert ; Morgan ; III Clifford Owen ; Wei Cong ; Yu Chienfan, Endpoint detection by chemical reaction.
    상세보기
  18. Li Leping ; Gilhooly James Albert ; Morgan ; III Clifford Owen ; Wei Cong, Endpoint detection by chemical reaction and light scattering.
    상세보기
  19. Li Leping ; Gilhooly James Albert ; Morgan ; III Clifford Owen ; Wei Cong ; Yu Chienfan, Endpoint detection by chemical reaction and photoionization.
    상세보기
  20. Li Leping ; Gilhooly James Albert ; Morgan ; III Clifford Owen ; Wei Cong, Endpoint detection by chemical reaction and reagent.
    상세보기
  21. Szetsen Steven Lee,TWX, In-situ and non-intrusive method for monitoring plasma etch chamber condition utilizing spectroscopic technique.
    상세보기
  22. Yang Ming ; Kaida Masahiro ; Lassister Tom ; Fishburn Fred D., In-situ barc and nitride etch process.
    상세보기
  23. Li Leping ; Gilhooly James Albert ; Morgan ; III Clifford Owen ; Wei Cong ; Yu Chienfan, Indirect endpoint detection by chemical reaction.
    상세보기
  24. Leping Li ; James Albert Gilhooly ; Clifford Owen Morgan, III ; William Joseph Surovic ; Cong Wei, Indirect endpoint detection by chemical reaction and chemiluminescence.
    상세보기
  25. Li Leping ; Gilhooly James Albert ; Morgan ; III Clifford Owen ; Surovic William Joseph ; Wei Cong, Indirect endpoint detection by chemical reaction and chemiluminescence.
    상세보기
  26. Tien Zu-Jean (Poughkeepsie NY), Laser luminescence monitor for material thickness.
    상세보기
  27. Liu Alexander F., Method and apparatus for detecting optimal endpoints in plasma etch processes.
    상세보기
  28. Buie, Melisa J.; Poslavsky, Leonid; Lewis, Jennifer, Method and apparatus for measuring etch uniformity of a semiconductor wafer.
    상세보기
  29. Michael Lane Smith, Jr. ; Joel O'Don Stevenson ; Pamela Peardon Denise Ward, Method and apparatus for monitoring plasma processing operations.
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  30. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
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  31. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
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  32. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
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  33. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
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  34. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
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  35. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
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  36. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
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  37. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
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  38. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
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  39. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
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  40. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
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  41. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
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  42. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
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  43. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
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  44. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
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  45. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
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  46. Thomas Frederick Allen Bibby, Jr. ; John A. Adams, Method and apparatus for using optical reflection data to obtain a continuous predictive signal during CMP.
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  47. Nakata Toshihiko,JPX ; Ninomiya Takanori,JPX, Method and device for detecting end point of plasma treatment, method and device for manufacturing semiconductor device.
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  48. Ko Noguchi JP, Method and system for estimating plasma damage to semiconductor device for layout design.
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  49. Becker Volker,DEX ; Laermer Franz,DEX ; Schilp Andrea,DEX, Method for detecting the transition between different materials in semiconductor structures.
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  50. Chen,Yi Ling, Method for in situ monitoring of chamber peeling.
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  51. Barna Gabriel G. (Richardson TX) Economou Demetre J. (Houston TX), Method for measuring plasma properties in semiconductor processing.
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  52. Bell, Ferdinand, Method for monitoring a semiconductor fabrication process for processing a substrate.
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  53. Shu-Ya Chuang TW; Gow-Wei Sun TW; Ga-Ming Hong TW; Steven Chen TW; Pei-Jen Wang TW, Method of monitoring loss of silicon nitride.
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  54. Tao Hun-Jan,TWX ; Tsai Chia Shiung,TWX ; Yu Chen-Hua,TWX, Optical emisson spectroscopy (OES) method for monitoring and controlling plasma etch process when forming patterned laye.
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  55. Sato, Kenichi; Kamakura, Shogo; Nakamura, Shigeyuki; Ohta, Tsuyoshi; Hirayanagi, Michito; Suzuki, Hiroki; Adachi, Shunsuke, Photodiode array, method for determining reference voltage, and method for determining recommended operating voltage.
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  56. Tesauro Mark R., Plasma emission detection for process control via fluorescent relay.
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  57. Hanawa, Hiroji; Tanaka, Tsutomu; Collins, Kenneth S.; Al-Bayati, Amir; Ramaswamy, Kartik; Nguyen, Andrew, Plasma immersion ion implantation reactor having an ion shower grid.
    상세보기
  58. Hanawa, Hiroji; Tanaka, Tsutomu; Collins, Kenneth S.; Al-Bayati, Amir; Ramaswamy, Kartik; Nguyen, Andrew, Plasma immersion ion implantation reactor having multiple ion shower grids.
    상세보기
  59. Yamage Masashi,JPX ; Takada Hiroyuki,JPX ; Yamauchi Takeshi,JPX, Plasma process end point determination method and apparatus, and plasma evaluation method and apparatus.
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  60. Wang, Jean; Ko, Francis; Chen, Ping Hsu; Lo, Henry; Lai, Chih Wei, Prediction of uniformity of a wafer.
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  61. Barna Gabriel G. (Richardson TX) Ratliff Charles (Richardson TX), Process and apparatus for detecting aberrations in production process operations.
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  62. Dolins Steven B. (Dallas TX) Srivastava Aditya (Richardson TX) Flinchbaugh Bruce E. (Dallas TX) Gunturi Sarma S. (Richardson TX) Lassiter Thomas W. (Garland TX) Love Robert L. (McKinney TX), Process and apparatus for detecting aberrations in production process operations.
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  63. Li Leping ; Gilhooly James Albert ; Morgan Clifford Owen ; Wei Cong, Real-time control of chemical-mechanical polishing processing by monitoring ionization current.
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  64. Batchelder William T. (Menlo Park CA) Piatt John A. (Soquel CA) Sautter Kenneth M. (Sunnyvale CA), Resist development method.
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  65. Radens Carl J. ; Fairchok Cynthia A., Selective oxide-to-nitride etch process using C.sub.4 F.sub.8 /CO/Ar.
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  66. Yamartino, John M.; Loewenhardt, Peter K.; Lubomirsky, Dmitry; Singh, Saravjeet, Shaping a plasma with a magnetic field to control etch rate uniformity.
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  67. Lukins Ronald E. ; Cooksey Martin P., System for providing in-situ temperature monitoring and temperature control of a specimen being exposed to plasma enviro.
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  68. Bennett Reid S. (Wappingers Falls NY) Ephrath Linda M. (LaGrange NY) Schwartz Geraldine C. (Poughkeepsie NY) Selwyn Gary S. (Hopewell Junction NY), Trench etch endpoint detection by LIF.
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