초록 ▼

A method of manufacturing silicon carbide whiskers in which a carbon and silicon containing material having a thin configuration and sufficient porosity to permit both the passage of a gas therethrough and to provide spaces for growing whiskers therein is charged on a gas-permeable tray, and heated

A method of manufacturing silicon carbide whiskers in which a carbon and silicon containing material having a thin configuration and sufficient porosity to permit both the passage of a gas therethrough and to provide spaces for growing whiskers therein is charged on a gas-permeable tray, and heated in a furnace of non-oxidizing atmosphere. The tray is moved intermittently through a series of temperature zones, increasing stage-by-stage from about 400°C. to 1,300°C., while a non-oxidizing gas is circulated through the porous material to remove any impurities. Thereafter, the heated tray is intermittently moved through a series of increasing temperature stages from about 1,350°C. to 1,450°C. to effect whisker growth. The treated silicon carbide-containing material is dispersed in a two-phase mixture of a hydrophobic organic liquid and water. The desired silicon carbide whiskers can be isolated from the aqueous phase.

대표청구항 ▼

A method of manufacturing silicon carbide comprising the following steps: (a) providing a silicon and carbon containing material having sufficient thinness and porosity to permit the passage of a gas therethrough; (b) arranging said material on a gas-permeable, heat-resistant support; (c) placing th

A method of manufacturing silicon carbide comprising the following steps: (a) providing a silicon and carbon containing material having sufficient thinness and porosity to permit the passage of a gas therethrough; (b) arranging said material on a gas-permeable, heat-resistant support; (c) placing the material-bearing support in an air tight furnace, said air tight furnace adapted to provide at least three temperature zones covering the range of about 400°C. to a high of at least 1,300°C., each of said temperature zones having a substantially different temperature; (d) moving said material-bearing support successively through said temperature zones, in the direction of increasing temperature; (e) maintaining said material-bearing support means in each of said temperature zones for at least one hour; (f) passing a non-oxidizing gas through the heated material to remove impurities while the material is in each temperature zone below 1,300°C.; and (g) removing silicon carbide whisker-containing material from said furnace.