[특허]Method for optimizing photoresponsive amorphous alloys and devices

[미국특허] Method for optimizing photoresponsive amorphous alloys and devices 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C22C-028/00 H01L-031/18
출원번호	US-0368221 (1982-04-14)
발명자 / 주소	Ovshinsky Stanford R. (Bloomfield Hills MI) Izu Masatsugu (Birmingham MI)
출원인 / 주소	Sovonics Solar Systems (Solon OH 02)
인용정보	피인용 횟수 : 96 인용 특허 : 6

초록 ▼

The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like; having improved wavelength threshold characteristics is made possible by adding one or more band gap adjusting elements to the alloys and devices. The adjusting element or elements are added at least to the active photoresponsive regions of amorphous devices containing silicone and fluorine, and preferably hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as tin. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition. The addition of fluorine bonding and electronegativity to the alloy acts as a compensating or altering element to reduce the density of states in the energy gap thereof. The fluorine bond strength allows the adjusting element(s) to be added to the alloy to adjust the band gap without reducing the electronic qualities of the alloy. Hydrogen also acts as a compensating or altering element to compliment fluorine when utilized therewith. The compensating or altering element(s) can be added during deposition of the alloy or following deposition. The addition of the adjusting element(s) to the alloys adjusts the band gap to a selected optimum wavelength threshold for a particular device to increase the photoabsorption efficiency to enhance the device photoresponsive without adding states in the gap which decrease the efficiency of the devices. The adjusting element(s) can be added in varying amounts, in discrete layers or in substantially constant amounts in the alloys and devices.

대표청구항 ▼

A method of making an improved photoresponsive amorphous alloy, said method comprising depositing on a substrate a material including at least silicon and incorporating in said material at least one density of states reducing element, said element being fluorine, and introducing at least one band gap adjusting element into said material without substantially increasing the states in the band gap to produce an alloy having a band gap adjusted for a specified photoresponse wavelength threshold. An amorphous alloy made by the process of claim 1 wherein said adjusting element is germanium.

이 특허에 인용된 특허 (6) 인용/피인용 타임라인 분석

Dalal Vikram L. (Newark DE), Amorphous semiconductor solar cell.
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Ovshinsky Stanford R. (Bloomfield Hills MI) Izu Masatsugu (Birmingham MI), Amorphous semiconductors equivalent to crystalline semiconductors.
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Ovshinsky Stanford R. (Bloomfield Hills MI) Madan Arun (Rochester MI), Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process.
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Dalal, Vikram L., High efficiency thin-film multiple-gap photovoltaic device.
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Ovshinsky Stanford R. (Bloomfield Hills MI) Izu Masatsugu (Birmingham MI), Method for optimizing photoresponsive amorphous alloys and devices.
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Yamazaki Shunpei (21-21 Kitakarasuyama 7-chome Setagaya-ku ; Tokyo JPX), Semiconductor photoelectric conversion device.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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[미국특허] Method for optimizing photoresponsive amorphous alloys and devices 원문보기

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[미국특허] Method for optimizing photoresponsive amorphous alloys and devices 원문보기

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