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Surface treatment apparatus 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B44C-001/22
  • C03C-015/00
  • C03C-025/06
  • C23C-013/08
출원번호 US-0573325 (1984-01-24)
우선권정보 JP-0008731 (1983-01-24)
발명자 / 주소
  • Ninomiya Ken (Nakano JPX) Suzuki Keizo (Hachioji JPX) Nishimatsu Shigeru (Kokubunji JPX)
출원인 / 주소
  • Hitachi, Ltd. (Tokyo JPX 03)
인용정보 피인용 횟수 : 43  인용 특허 : 2

초록

A gas is introduced into a surface treatment chamber and is activated therein. The surface of a specimen placed in the surface treatment chamber is treated by using reactive species generated by this activation. A means of supplying controllable energy such as the energy of heat, light, or electron

대표청구항

A surface treatment apparatus wherein a material gas is introduced into a surface treatment chamber and activated therein, and wherein the surface of a specimen placed in said surface treatment chamber is treated by reactive species of said material gas generated by said activation, said surface tre

이 특허에 인용된 특허 (2)

  1. Harper James M. E. (Yorktown Heights NY) Kaufman Harold R. (Fort Collins CO), Ion source for reactive ion etching.
  2. McKenna Charles M. (Fishkill NY) Willcox H. Keith (Poughkeepsie NY), Photon enhanced reactive ion etching.

이 특허를 인용한 특허 (43)

  1. Sekiguchi Atsushi (Fuchu JPX) Kobayashi Tsukasa (Fuchu JPX) Takagi Shinji (Fuchu JPX), Apparatus for forming a metal thin film utilizing temperature controlling means.
  2. Fayfield Robert T. ; Schwab Brent, Apparatus for processing both sides of a microelectronic device precursor.
  3. Butterbaugh,Jeffery W.; Gray,David C.; Fayfield,Robert T.; Siefering,Kevin; Heitzinger,John; Hiatt,Fred C., Apparatus for surface conditioning.
  4. Sandhu,Gurtej S., Atomic layer deposition with point of use generated reactive gas species.
  5. Sandhu,Gurtej S., Atomic layer deposition with point of use generated reactive gas species.
  6. Purdes Andrew J. (Garland TX), Chemical beam epitaxy system.
  7. Butterbaugh Jeffery W. ; Gray David C., Cleaning method.
  8. Butterbaugh Jeffery W. ; Gray David C. ; Fayfield Robert T., Cleaning method.
  9. Derderian,Garo J.; Morrison,Gordon, Deposition system to provide preheating of chemical vapor deposition precursors.
  10. Lee Chung J. ; Wang Hui ; Foggiato Giovanni Antonio, Deposition systems and processes for transport polymerization and chemical vapor deposition.
  11. Takasu Katsuji,JPX ; Tsuda Hisanori,JPX ; Sano Masafumi,JPX ; Hirai Yutaka,JPX, Device for forming deposited film.
  12. Pitts John R. (Golden CO), Electron beam enhanced surface modification for making highly resolved structures.
  13. Fayfield Robert T. ; Schwab Brent, Equipment for UV wafer heating and photochemistry.
  14. Fayfield, Robert T.; Schwab, Brent, Equipment for UV wafer heating and photochemistry.
  15. Knoot Peter A., Gas manifold for uniform gas distribution and photochemistry.
  16. Peter A. Knoot, Gas manifold for uniform gas distribution and photochemistry.
  17. Yamazaki Shunpei,JPX, Layer member forming method.
  18. Yamazaki,Shunpei, Layer member forming method.
  19. Siess Harold E., Method and apparatus for making and depositing compounds.
  20. Butterbaugh Jeffery W. ; Gray David C. ; Fayfield Robert T. ; Siefering Kevin ; Heitzinger John ; Hiatt Fred C., Method and apparatus for surface conditioning.
  21. Wendman Mark (Austin TX), Method and system for producing thin films.
  22. Takasu Katsuji,JPX ; Tsuda Hisanori,JPX ; Sano Masafumi,JPX ; Hirai Yutaka,JPX, Method for forming deposited film.
  23. Yamazaki, Shunpei, Method for the manufacture of an insulated gate field effect semiconductor device.
  24. Jeffery W. Butterbaugh ; Brent Schwab, Method of surface preparation.
  25. Ellis, Christina Ann, Methods of achieving selective etching.
  26. Yamazaki Shunpei,JPX, Microwave enhanced CVD system under magnetic field.
  27. Yamazaki, Shunpei, Microwave enhanced CVD system under magnetic field.
  28. Huet Daniel (Boissise Le Roi FRX) Lambert Marc (Orsay FRX), Molecular beam generator using thermal decomposition for manufacturing semiconductors by epitaxy.
  29. Kamiya Osamu (Machida JPX), Photochemical vapor deposition apparatus.
  30. Aklufi Monti E. (San Diego CA) Brock David W. (San Diego CA), Plasma generator utilizing dielectric member for carrying microwave energy.
  31. Yamazaki, Shunpei, Plasma processing apparatus.
  32. Rudder Ronald Alan ; Hendry Robert Carlisle ; Hudson George Carlton, Plasma treatment apparatus.
  33. Derderian,Garo J.; Morrison,Gordon, Preheating of chemical vapor deposition precursors.
  34. Nakagawa Katsumi,JPX, Process for preparing a functional thin film by way of the chemical reaction among active species.
  35. Nakagawa Katsumi (Nagahama JPX), Process for preparing a functional thin film by way of the chemical reaction among active species and apparatus therefor.
  36. Nakagawa Katsumi (Nagahama JPX), Process for the preparation of a multi-layer stacked junction typed thin film transistor using seperate remote plasma.
  37. Markunas Robert J. (Chapel Hill NC) Hendry Robert (Hillsborough NC) Rudder Ronald A. (Cary NC), Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer.
  38. Junichi Nishizawa JP; Hitoshi Abe JP, Semiconductor crystal growth apparatus.
  39. Yamazaki Shunpei,JPX, Semiconductor device, manufacturing method, and system.
  40. Yoshida Hideo,JPX, Semiconductor wafer chucking device and method for stripping semiconductor wafer.
  41. Caledonia George E. (Milton MA) Krech Robert H. (Saugus MA) Green Byron D. (Reading MA) Pirri Anthony N. (Andover MA), Source of high flux energetic atoms.
  42. Suzuki Keizo (Kodaira JPX) Hiraoka Susumu (Kokubunji JPX) Nishimatsu Shigeru (Kokubunji JPX), Surface treatment and apparatus therefor.
  43. Suzuki Keizo (Kodaira JPX) Ninomiya Ken (Hachioji JPX) Nishimatsu Shigeru (Kokubunji JPX) Okada Osami (Chofu JPX), Surface treatment apparatus.
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