이 특허를 인용한 특허 (96)

1. Li,Lihua; Huang,Tzu Fang; Sugiarto, legal representative,Jerry; Xia,Li Qun; Lee,Peter Wai Man; M'Saad,Hichem; Cui,Zhenjiang; Park,Sohyun; Sugiarto, deceased,Dian, Adhesion improvement for low k dielectrics.

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2. Li,Lihua; Huang,Tzu Fang; Sugiarto, legal representative,Jerry; Xia,Li Qun; Lee,Peter Wai Man; M'Saad,Hichem; Cui,Zhenjiang; Park,Sohyun; Sugiarto,Dian, Adhesion improvement for low k dielectrics.

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3. Rajagopalan,Nagarajan; Shek,Meiyee; Lee,Albert; Lakshmanan,Annamalai; Xia,Li Qun; Cui,Zhenjiang, Adhesion improvement for low k dielectrics to conductive materials.

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4. Plester, George; Ehrich, Horst, Barrier coated plastic containers and coating methods therefor.

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5. Lee,Albert; Lakshmanan,Annamalai; Kim,Bok Hoen; Xia,Li Qun; Shek Le,Mei Yee, Bi-layer approach for a hermetic low dielectric constant layer for barrier applications.

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6. Kubacki, Ronald M., Capacitor with plasma deposited dielectric.

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7. Weidman, Timothy; Nault, Michael P; Chang, Josephine J, Capping layer for extreme low dielectric constant films.

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8. Davis, Robert C.; Lund, Jason Mathew; Davis, Andrew L.; Liddiard, Steven D.; Zappe, Mike; Jensen, Charles R., Carbon composite support structure.

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9. Davis, Robert C.; Vanfleet, Richard R.; Hutchison, David N., Carbon nanotube MEMS assembly.

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10. Shi,Yu; Mucha,Lawrence S., Coating composition containing an epoxide additive and structures coated therewith.

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11. Coulson, Stephen Richard; Burnett, Ian; Sambell, John Henry, Coating of a polymer layer using low power pulsed plasma in a plasma chamber of a large volume.

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12. Wang, Dongbing; Reynolds, Dave, Cold electron number amplifier.

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13. Mehregany, Mehran; Zorman, Christian A.; Fu, Xiao-An; Dunning, Jeremy L., Composition comprising silicon carbide.

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14. Lane Andrew P. (Westminster TX) Webb Douglas A. (Allen TX) Frederick Gene R. (Mesquite TX), Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride.

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15. Yamamoto Kenji (Kobe JPX) Nakayama Takehisa (Kobe JPX) Tawada Yoshihisa (Kobe JPX), Electrode for electric discharge machining and method for producing the same.

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16. Gilbert,Martyn, Electronic system architecture.

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17. Xu, Ping; Lee, Jia; Lou, Ishing; Xia, Li-Qun, Fluorine-containing layers for damascene structures.

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18. Walsh, George P.; Norman, Wesley M.; Frentzel, Jonathan Michael; Wilson, William H., GC column connection with a planar connection to mating devices.

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19. Choi, Soo Young; Shang, Quanyuan; Greene, Robert I.; Hou, Li, Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition.

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20. Kasra Khazeni ; Eugene Tzou ; Zhengquan Tan, HDP-CVD deposition of low dielectric constant amorphous carbon film.

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21. Lakshmanan,Annamalai; Lee,Albert; Lee,Ju Hyung; Kim,Bok Hoen, Hermetic low dielectric constant layer for barrier applications.

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22. Davis, Robert C.; Vanfleet, Richard; Zufeldt, Kyle; Davis, Andrew L.; Liddiard, Steven D., High strength carbon fiber composite wafers for microfabrication.

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23. Huang,Judy H., In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application.

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24. Huang, Judy H., In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application.

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25. Huang, Judy H., In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application.

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26. Yim, Kang Sub; Tam, Melissa M.; Sugiarto, Dian; Lang, Chi-I; Lee, Peter Wai-Man; Xia, Li-Qun, Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD).

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27. Yim,Kang Sub; Tam,Melissa M.; Sugiarto,Dian; Lang,Chi I; Lee,Peter Wai Man; Xia,Li Qun, Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD).

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28. Yim,Kang Sub; Tam,Melissa M.; Sugiarto,Dian; Lang,Chi I; Lee,Peter Wai Man; Xia,Li Qun, Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD).

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29. Yim,Kang Sub; Sen,Soovo; Sugiarto,Dian; Lee,Peter; Yieh,Ellie, Method and apparatus for deposition of low dielectric constant materials.

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30. Huang, Judy; Bencher, Chris; Rathi, Sudha, Method and apparatus for reducing fixed charges in a semiconductor device.

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31. Huang, Kegang; Huang, Judy H; Xu, Ping, Method and apparatus for treating low k dielectric layers to reduce diffusion.

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32. Plester, George; Ehrich, Horst; Rule, Mark, Method for coating a plastic container with vacuum vapor deposition.

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33. Gaillard, Frederic; Nemani, Srinivas D., Method for depositing a low dielectric constant film.

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34. Rajagopalan, Nagarajan; Feng, Joe; Ngai, Christopher S; Shek, Meiyee (Maggie Le); Parikh, Suketu A; Thanh, Linh H, Method for forming silicon containing layers on a substrate.

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35. Yim, Kang Sub; Tam, Melissa M.; Sugiarto, Dian; Lang, Chi-I; Lee, Peter Wai-Man; Xia, Li-Qun, Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide.

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36. Hamakawa Yoshihiro (Kawanishi JPX) Yamagishi Hideo (Kyoto JPX) Tawada Yoshihisa (Kobe JPX), Method for production of semiconductor by glow discharge decomposition of silane.

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37. Gaillard, Frederic; Xia, Li-Qun; Lim, Tian-Hoe; Yieh, Ellie; Yau, Wai-Fan; Jeng, Shin-Puu; Liu, Kuowei; Lu, Yung-Cheng, Method of decreasing the K value in SIOC layer deposited by chemical vapor deposition.

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38. Gaillard,Frederic; Xia,Li Qun; Lim,Tian Hoe; Yieh,Ellie; Yau,Wai Fan; Jeng,Shin Puu; Liu,Kuowei; Lu,Yung Cheng, Method of decreasing the k value in sioc layer deposited by chemical vapor deposition.

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39. Fairbairn,Kevin; Rice,Michael; Weidman,Timothy; Ngai,Christopher S; Latchford,Ian Scot; Bencher,Christopher Dennis; Wang,Yuxiang May, Method of depositing an amorphous carbon layer.

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40. Fairbairn,Kevin; Rice,Michael; Weidman,Timothy; Ngai,Christopher S; Latchford,Ian Scot; Bencher,Christopher Dennis; Wang,Yuxiang May, Method of depositing an amorphous carbon layer.

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41. Nemani, Srinivas D; Xia, Li-Qun; Sugiarto, Dian; Yieh, Ellie; Xu, Ping; Campana-Schmitt, Francimar; Lee, Jia, Method of depositing dielectric films.

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42. Nemani,Srinivas D; Xia,Li Qun; Sugiarto,Dian; Yieh,Ellie; Xu,Ping; Campana Schmitt,Francimar; Lee,Jia, Method of depositing dielectric films.

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43. Nemani,Srinivas D; Xia,Li Qun; Sugiarto,Dian; Yieh,Ellie; Xu,Ping; Campana Schmitt,Francimar; Lee,Jia, Method of depositing dielectric films.

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44. Lee, Ju-Hyung; Xu, Ping; Venkataraman, Shankar; Xia, Li-Qun; Han, Fei; Yieh, Ellie; Nemani, Srinivas D.; Yim, Kangsub; Moghadam, Farhad K.; Sinha, Ashok K.; Zheng, Yi, Method of depositing dielectric materials in damascene applications.

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45. Lee,Ju Hyung; Xu,Ping; Venkataraman,Shankar; Xia,Li Qun; Han,Fei; Yieh,Ellie; Nemani,Srinivas D.; Yim,Kangsub; Moghadam,Farhad K.; Sinha,Ashok K.; Zheng,Yi, Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications.

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46. Xia,Li Qun; Xu,Ping; Yang,Louis, Method of depositing low K barrier layers.

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47. Campana, Francimar; Nemani, Srinivas; Chapin, Michael; Venkataraman, Shankar, Method of depositing low dielectric constant silicon carbide layers.

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48. Campana, Francimar; Nemani, Srinivas; Chapin, Michael; Venkataraman, Shankar, Method of depositing low dielectric constant silicon carbide layers.

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49. Campana,Francimar; Nemani,Srinivas; Chapin,Michael; Venkataraman,Shankar, Method of depositing low dielectric constant silicon carbide layers.

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50. Xia, Li-Qun; Xu, Ping; Yang, Louis, Method of depositing low k barrier layers.

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51. Xia,Li Qun; Xu,Ping; Yang,Louis, Method of depositing low k barrier layers.

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52. Xu, Ping; Xia, Li-Qun; Dworkin, Larry A.; Naik, Mehul, Method of eliminating photoresist poisoning in damascene applications.

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53. Xu,Ping; Xia,Li Qun; Dworkin,Larry A.; Naik,Mehul, Method of eliminating photoresist poisoning in damascene applications.

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54. Li,Lihua; Huang,Tzu Fang; Xia,Li Qun, Method of improving stability in low k barrier layers.

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55. Bich, Danilo; Chiaverina, Eliseo; Pescarmona, Francesca; Schina, Paolo, Method of manufacturing an ink jet printhead.

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56. Lopata Eugene S. ; Felts John T., Method of plasma enhanced silicon oxide deposition.

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57. George Plester BE; Horst Ehrich DE, Methods for measuring the degree of ionization and the rate of evaporation in a vapor deposition coating system.

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58. Walsh, George P.; Veeneman, Rebecca A., Microfluidic contaminant trap for trapping contaminants in gas chromatography.

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59. Rule, Mark; Shi, Yu; Gebele, Thomas; Grimm, Helmut; Budke, Elisabeth, Multilayer polymeric/inorganic oxide structure with top coat for enhanced gas or vapor barrier and method for making same.

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60. Rule, Mark; Shi, Yu; Gebele, Thomas; Grimm, Helmut; Budke, Elisabeth, Multilayer polymeric/inorganic oxide structure with top coat for enhanced gas or vapor barrier and method for making same.

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61. Rule, Mark; Shi, Yu; Ehrich, Horst, Multilayer polymeric/zero valent material structure for enhanced gas or vapor barrier and UV barrier and method for making same.

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62. Rule, Mark; Shi, Yu; Ehrich, Horst, Multilayer polymeric/zero valent material structure for enhanced gas or vapor barrier and uv barrier and method for making same.

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63. Kozaczek, Krzysztof; Cornaby, Sterling; Liddiard, Steven; Jensen, Charles, Multiple wavelength X-ray source.

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64. Liddiard, Steven D., Multiple-size support for X-ray window.

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65. Mizukami Hiroyuki (Hiratsuka JPX), Photosensitive member for use in electrophotography.

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66. Kubacki,Ronald M., Plasma deposited optical waveguide.

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67. Kubacki, Ronald M., Plasma deposited selective wetting material.

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68. Kubacki,Ronald M., Plasma deposited selective wetting material.

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69. Huang, Judy, Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers.

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70. Huang,Judy, Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers.

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71. Plester George,BEX ; Ehrich Horst,DEX, Plasma-enhanced vacuum vapor deposition system including systems for evaporation of a solid, producing an electric arc discharge and measuring ionization and evaporation.

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72. Plester George,BEX ; Ehrich Horst,DEX ; Rule Mark ; Pickel Herbert,DEX ; Humele Heinz,DEX, Plastic containers with an external gas barrier coating.

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73. Humele, Heinz; Pickel, Herbert; Plester, George; Ehrich, Horst; Rule, Mark, Plastic containers with an external gas barrier coating, method and system for coating containers using vapor deposition, method for recycling coated containers, and method for packaging a beverage.

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74. Liddiard, Steven; Taylor, Brian; Decker, Keith; Maynard, Jason, Polymer layer on X-ray window.

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75. Liddiard, Steven; Taylor, Brian; Decker, Keith; Maynard, Jason, Polymer layer on X-ray window.

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76. David Moses M. ; McClure Donald J. ; Maki Stephen P., Process and apparatus for depositing a carbon-rich coating on a moving substrate.

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77. Curtins Hermann (Neuchatel CHX), Process for depositing amorphous hydrogenated silicon in a plasma chamber.

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78. Yoshida Takeshi (Tsukuba JPX) Itabashi Masahiko (Tsukuba JPX), Process for forming insulating film used in thin film electroluminescent device.

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79. Heinecke Rudolf A. H. (Harlow GB2) Ojha Suresh M. (Harlow GB2) Llewellyn Ian P. (Harlow GB2), Pulsed plasma process for treating a substrate.

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80. Decker, Keith W.; Lines, Mike; Xu, Degao; Perkins, Raymond, Radiation window with coated silicon support structure.

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81. Wang, Dongbing; Reynolds, Dave, Reduced power consumption X-ray source.

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82. Liddiard, Steven D.; Jensen, Charles R.; Zappe, Michael; Decker, Keith W.; Davis, Robert C.; Pei, Lei; Vanfleet, Richard R., Reinforced polymer x-ray window.

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83. Bard, Erik C.; Cornaby, Sterling W., Resistively heated small planar filament.

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84. Mehregany, Mehran; Zorman, Christian A.; Fu, Xiao-An; Dunning, Jeremy, Silicon carbide and other films and method of deposition.

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85. Li-Qun Xia ; Paul Fisher ; Margaret Lynn Gotuaco ; Frederic Gaillard FR; Ellie Yieh, Silicon carbide cap layers for low dielectric constant silicon oxide layers.

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86. Xia, Li-Qun; Fisher, Paul; Gotuaco, Margaret Lynn; Gaillard, Frederic; Yieh, Ellie, Silicon carbide cap layers for low dielectric constant silicon oxide layers.

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87. Bencher, Christopher; Feng, Joe; Shek, Mei-Yee; Ngai, Chris; Huang, Judy, Silicon carbide deposition for use as a low dielectric constant anti-reflective coating.

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88. Bencher, Christopher; Feng, Joe; Shek, Mei-Yee; Ngai, Chris; Huang, Judy, Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating.

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89. Loboda Mark Jon ; Michael Keith Winton, Silicon carbide metal diffusion barrier layer.

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90. Reynolds, David; Miller, Eric J.; Cornaby, Sterling W.; Hullinger, Derek; Jensen, Charles R., Small x-ray tube with electron beam control optics.

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91. Badyal, Jas P. S.; Coulson, Stephen Richard; Willis, Colin R.; Brewer, Stuart A., Surface coatings.

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92. Blonigan,Wendell T.; White,John M.; Bagley,William A., Tunable gas distribution plate assembly.

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93. Zheng, Yi; Nemani, Srinivas D.; Xia, Li-Qun, Two-layer film for next generation damascene barrier application with good oxidation resistance.

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94. Davis, Robert C., Variable radius taper x-ray window support structure.

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95. Lee, Samuel Soonho; Tirado, Victor Armando; Crawford, David S., X-ray tube and receiver inside mouth.

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96. Wang, Dongbing, X-ray tube high voltage sensing resistor.

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