초록 ▼

An electronic circuit interconnection system provides high density mounting of ceramic chip-carrier integrated circuit devices or other beam-lead, dual-in-line (DIP), tape-automated-bonded (TAB), flip-chip, or direct-mounted i.c. devices with wire-bonded interconnects or the like on an economical, d

An electronic circuit interconnection system provides high density mounting of ceramic chip-carrier integrated circuit devices or other beam-lead, dual-in-line (DIP), tape-automated-bonded (TAB), flip-chip, or direct-mounted i.c. devices with wire-bonded interconnects or the like on an economical, dimensionally-stable, interconnection substrate which has high heat dissipating properties. The substrate has glass components which are fused onto etched metal patterns and which are proportioned relative to the metal patterns so that the heat-expansion properties of the substrate correspond to those of the i.c. devices to maintain bond integrity between the i.c. leads and circuit paths on the substrate and so that the substrate has sufficient heat-dissipating properties to permit the high density i.c. mounting. The substrates incorporate circuit paths, device mounting pads, edge terminals, pin mounting holes and other typical substrate features in the etched patterns in multimetal laminated metal plates of selected thickness which are coated on one or both sides with glass frit fused to the plates. Where substrates with more than one layer are desired, glass-coated plates are stacked with pin mounting holes and the like aligned and the glass coatings are fused together. Metal vias extend through the glass coatings where desired to interconnect metal layers of the substrate.

대표청구항 ▼

1. An electronic circuit comprising a substrate having a plurality of circuit means arranged in spaced electrically insulated relation to each other and electronic semiconductor means mounted on the substrate electrically interconnected with the circuit path means, the semiconductor means having por

1. An electronic circuit comprising a substrate having a plurality of circuit means arranged in spaced electrically insulated relation to each other and electronic semiconductor means mounted on the substrate electrically interconnected with the circuit path means, the semiconductor means having portions formed of inorganic material having selected thermal expansion properties and having metal conductors fixedly connected in electrically conductive relation to the circuit path means, and the substrate means comprising a flat, composite metal laminate having a plurality of symmetrically disposed layers of different metal materials metallurgically bonded together, said metal laminate including a layer of metal of relatively high thermal conductivity formed of a copper material and a layer of metal of relatively low thermal expansion properties formed of an iron alloy material selected from the group consisting of alloys having a nominal composition by weight of from about 36 to 50 percent nickel and the balance iron, of about 31 percent nickel, 8 percent chromium, 8 percent cobalt and the balance iron, of about 32 percent nickel, 15 percent cobalt, 1 percent molybdenum and the balance iron, of about 38 percent nickel, 7 percent chromium and the balance iron, of about 17 percent chromium and the balance iron, of about 16.5 percent chromium, 4.5 percent aluminum, and the balance iron, of about 57 percent cobalt, 9 percent chromium and the balance iron, and of about 23 to 30 percent nickel, about 17 to 30 percent cobalt about 0.6 to 0.8 percent manganese and the balance iron, the relative thickness of said metal layers being selected so that the composite metal laminate has thermal expansion properties substantially corresponding to those of glass and alumina materials and has significantly higher thermal conductivity properties than said glass and alumina materials as indicated in FIG. 23.